FTP04N60D FTA04N60D A Data Sheet - bwdevice.com

1 Features:Applications:N-Channel MOSFETFTP04N60 DFTA04N60 DFTP04N60D/ FTA04N60D REV. C. Jun. 2010 2010 InPower Semiconductor Co., Ltd. Page 1 of 9 Adaptor Charger SMPS Standby Power RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching CurvesLead Free Package and FinishVDSSRDS(ON) (Max.)ID600 AOrdering InformationPART NUMBERPACKAGEBRANDFTP04N60 DTO-220 FTP04N60 DFTA04N60 DTO-220 FFTA04N60 DAbsolute Maximum Ratings TC=25oC unless otherwise specifiedSymbol ParameterFTP04N60 DFTA04N60 DUnitsVDSSD rain-to-Source Voltage (NOTE *1)600 VIDC ontinuous Drain Current *AID@ 100 oCContinuous Drain Current Figure 3 IDMP ulsed Drain Current, VGS@ 1 0 V ( N O T E * 2 )F i g u r e 6 PDPower Dissipation7528 WDerating Factor above Voltage 30 VEASS ingle Pulse Avalanche EngergyL=10 mH, ID= Amps245mJIASP ulsed Avalanche Rating Figure 8 Adv/dtPeak Diode Recovery dv/dt (NOTE *3)

2 NsTLTPKGM aximum Temperature for Soldering Leads at in ( mm) from Case for 10 seconds Package Body for 10 seconds300260oCTJand TSTGO perating Junction and StorageTemperature Range-55 to 150 Thermal ResistanceSymbolParameterFTP04N60 DFTA04N60 DUnitsTest lead soldered to water cooled heatsink, PD ad-justed for a peak junction temperature of + cubic foot chamber, free air.*Drain Current Limited by Maximum Junction TemperatureCaution: Stresses greater than those listed in the Absolute Maximum Ratings Table may cause permanent damage to the devicePb SGDP ackagesNot to ScaleSDGSDGTO-220TO-220 FFTP04N60D/ FTA04N60D REV. C. Jun. 2010 2010 InPower Semiconductor Co., Ltd. Page 2 of 9ON Characteristics TJ=25oC unless otherwise ConditionsRDS(ON)Static Drain-to-Source On-ResistanceFigure 9 and.

3 VGS=10 V, ID= (NOTE *4)VGS(TH)Gate Threshold Voltage, Figure ,ID=250 PAgfsForward V, ID=4A (NOTE *4)OFF CharacteristicsTJ=25oC unless otherwise ConditionsBVDSSD rain-to-Source Breakdown Voltage600----VVGS=0 V, ID=250 A'BVDSS/' TJBreakdownVoltage TemperatureCoefficient, Figure to 25oC,ID=250 AIDSSD rain-to-Source Leakage Current----25 AVDS=600V, VGS=0V----250 VDS=480V, VGS=0 VTJ=125oCIGSSGate-to-Source Forward Leakage----100nAVGS=+30 VGate-to-Source Reverse Leakage-----100 VGS= -30 VResistive Switching Characteristics Essentially independent of operating Conditionstd(ON)Turn-on Delay Time--10--nsVDD=300 VtriseRise (OFF) Turn-Off Delay Time--39--VGS=10 VtfallFall Time--27--RG= :Dynamic Characteristics Essentially independent of operating ConditionsCissInput Capacitance--556--pFVGS=0 VCossOutput Capacitance--58--VDS=25 VCrssReverse Transfer 14 QgTotal Gate Charge-- --nCVDD=300 VQgs Gate-to-Source Charge-- --ID=4A,Vgs=10 VQgdGate-to-Drain ( Miller ) Charge-- --Figure 15 FTP04N60D / FTA04N60D REV.

4 C. Jun. 2010 2010 InPower Semiconductor Co., Ltd. Page 3 of 9 Source-Drain Diode Characteristics Tc=25oC unless otherwise ConditionsISContinuous Source Current (Body Diode)----4 AIntegral pn-diodeISMM aximum Pulsed Current (Body Diode)----16 Ain MOSFETVSDD iode Forward , VGS=0 Vtrr Reverse Recovery Time--89133nsVGS=0 VQrrReverse Recovery Charge--267400nCIF=4A, di/dt=100 A/ sNotes:*1. TJ = +25oC to +150oC.*2. Repetitive rating; pulse width limited by maximum junction temperature.*3. ISD= 4A di/dt < 100 A/ s, VDD < BVDSS, TJ=+150oC.*4. Pulse width < 380 s; duty cycle < 2%. FTP04N60D / FTA04N60D REV. C. Jun. 2010 2010 InPower Semiconductor Co., Ltd.

5 Page 4 of 9tp, Rectangular Pulse Duration (s)TC, Case Temperature (oC)PD, Power Dissipation (W)TC, Case Temperature (oC)VDS, Drain-to-Source Voltage (V) , Drain Current (A)ID, Drain Current (A)RDS(ON), Drain-to-SourceON Resistance (: VGS, Gate-to-Source Voltage (V)Figure 4. Typical Output Characteristics Power Dissipationvs Case Temperature25507510012515025507510012515 010E-6100E-61E-310E-31E+0 NOTES:DUTY FACTOR: D =t1 / t2 PEAK TJ=PDM x ZTJC x RTJC+TC20%10%5%2%single pulse1%PDMt1t2 PULSE DURATION = 250 S DUTY FACTOR = MAX, TC = 25oCFigure 1. Maximum Effective Thermal Impedance, Junction-to-CaseVGS = = 16 AID = 8 AID = 4 AID = 2 AZTJC, Thermal Impedance(Normalized)PULSE DURATION = 10 SDUTY FACTOR = MAXTC = 25oC50% 2.)

6 = = = +0100E-34 5 VGS = 3. Maximum Continuous Drain Current vs Case TemperatureTypical Drain-to-Source ON Resistancevs Gate Voltage and Drain CurrentFigure 5. 1515250 FTP04N60D / FTA04N60D REV. C. Jun. 2010 2010 InPower Semiconductor Co., Ltd. Page 5 of 9tp, Pulse Width (s)IDM, Peak Current (A)10 VGS, Gate-to-Source Voltage (V)ID, Drain-to-Source Current (A)tAV, Time in Avalanche (s)ID, Drain Current (A) TJ, Junction Temperature (oC)RDS(ON), Drain-to-Source Resistance (Normalized) (ON), Drain-to-SourceON Resistance (:) 8 6 40 Figure 7. Typical Transfer Characteristics-75-50-250255075100125150 02474100E-61E-310E-3100E-31E+010E+0 PULSE DURATION = 10 sDUTY CYCLE = % MAXVDS = 30 VPULSE DURATION = 10 sDUTY CYCLE = % MAXVGS = 10 V, ID = A DURATION = 10 sDUTY CYCLE = % MAXTC=25 CIf R= 0: tAV= (L IAS)/( )If Rz 0: tAV= (L/R) ln[IAS R)/( )+1]R equals total Series resistance of Drain circuit TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGIONF igure 6.

7 Maximum Peak Current Capability+150oC+25oC-55oC VGS = Drain-to-Source ON Resistancevs Junction TemperatureTypical Drain-to-Source ONResistance vs Drain CurrentFigure 9. Figure 10. = 15 VFOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:10E-6 ,, 7& ---------------------=IAS, Avalanche Current (A)10 1100E-61E-310E-31E-610E-6 STARTING TJ = 25oC STARTING TJ = 150oCUnclamped InductiveSwitching CapabilityFigure 8. 1005 FTP04N60D / FTA04N60D REV. C. Jun. 2010 2010 InPower Semiconductor Co., Ltd. Page 6 of 9 ISD, Reverse Drain Current (A) C, Capacitance (pF)ID, Drain Current (A)VGS(TH), Threshold Voltage (Normalized)TJ, Junction Temperature (oC)VDS, Drain-to-Source Voltage (V)VSD, Source-to-Drain Voltage (V)QG, Total Gate Charge (nC)TJ, Junction Temperature (oC) = 0 VID = 250 AVGS=VDSID=250 AOPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON)10 sCossCrssCissVGS = 0V, f = 1 MHzCiss = Cgs + CgdCoss# Cds + CgdCrss = CgdID = 4A+150oC+25 oC010001000 10100 VDS, Drain Voltage (V) VDS = 150 VVDS = 300 VVDS = 450 VBVDSS, Drain-to-Source Breakdown Voltage (Normalized)VGS, Gate-to-Source Voltage (V)

8 Typical Breakdown Voltage vsJunction TemperatureTypical Threshold Voltage vsJunction TemperatureFigure 11. Figure 12. Maximum Forward Bias SafeOperating AreaFigure 13. Figure 14. Typical Gate Chargevs Gate-to-Source VoltageTypical Body Diode TransferCharacteristicsFigure 15. Figure 16. Capacitance vs Drain-to-Source Voltage100 = MAX RATED TC = 25oCVGS = DC10 FTP04N60D / FTA04N60D REV. C. Jun. 2010 2010 InPower Semiconductor Co., Ltd. Page 7 of 9 Figure 17. Gate Charge Test CircuitFigure 18. Gate Charge WaveformFigure 19. Resistive Switching Test CircuitFigure 20. Resistive Switching WaveformsTest Circuits and WaveformsVDSVGStd(ON)td(OFF)trisetfall90 %10%VGS(TH)QgsQgdVGSVDSIDQgMillerRegionV DDVDS IDVGS1 REV.

9 C. Jun. 2010 2010 InPower Semiconductor Co., Ltd. Page 8 of 9 Figure 21. Diode Reverse Recovery Test CircuitFigure 22. Diode Reverse Recovery WaveformFigure 23. Unclamped Inductive Switching Test CircuitFigure 24. Unclamped Inductive Switching WaveformsTest Circuits and WaveformsIDQrrtrrBVDSSVGSIASVDDtptAV22 LIEASAS 0 VDDD ouble PulseIDLdi/dt :Series Switch(MOSFET)CommutatingDiodedi/dt = 100A/ AFTP04N60D/ FTA04N60D REV. C. Jun. 2010 2010 InPower Semiconductor Co., Ltd. Page 9 of 9 Disclaimers:InPower Semiconductor Co., Ltd (IPS) reserves the right to make changes without notice in order to improve reliability, functionor design and to discontinue any product or service without notice. Customers should obtain the latest relevant information beforeorders and should verify that such information is current and complete.

10 All products are sold subject to IPS s terms and conditionssupplied at the time of order Semiconductor Co., Ltd warrants performance of its hardware products to the specifications at the time of sale, Testing,reliability and quality control are used to the extent IPS deems necessary to support this warrantee. Except where agreed uponby contractual agreement, testing of all parameters of each product is not necessarily Semiconductor Co., Ltd does not assume any liability arising from the use of any product or circuit designs describedherein. Customers are responsible for their products and applications using IPS s components. To minimize risk, customers mustprovide adequate design and operating Semiconductor Co.