Example: biology

Gate Drivers for Enhancement Mode GaN Power FETs

gate Drivers for Enhancement Mode GaN Power FETs100V Half-Bridge and Low-Side Drivers Enable Greater Efficiency, Power Density, and SimplicityGallium Nitride Power FETs Deliver New Levels of Power DensityEnhancement mode Gallium Nitride (GaN) Power FETs can provide significant Power density benefits over silicon MOSFETs in Power converters. They have a much lower figure of merit (FOM) due to lower Rdson and lower Qg. With greater efficiencies, faster switching frequencies, and an ultra-small package footprint, GaN FETs enable higher density Power converters.

Gate Drivers for Enhancement Mode GaN Power FETs 100V Half-Bridge and Low-Side Drivers Enable Greater Efficiency, Power Density, and Simplicity

Tags:

  Dome, Drivers, Gate, Enhancement, Gate drivers for enhancement mode gan

Information

Domain:

Source:

Link to this page:

Please notify us if you found a problem with this document:

Other abuse

Transcription of Gate Drivers for Enhancement Mode GaN Power FETs

1 gate Drivers for Enhancement Mode GaN Power FETs100V Half-Bridge and Low-Side Drivers Enable Greater Efficiency, Power Density, and SimplicityGallium Nitride Power FETs Deliver New Levels of Power DensityEnhancement mode Gallium Nitride (GaN) Power FETs can provide significant Power density benefits over silicon MOSFETs in Power converters. They have a much lower figure of merit (FOM) due to lower Rdson and lower Qg. With greater efficiencies, faster switching frequencies, and an ultra-small package footprint, GaN FETs enable higher density Power converters.

2 However, realizing these benefits does present a new set of challenges. Large source-drain voltages and the stringent gate -source voltage drive requirements of GaN Power FETs pose new challenges related to limiting the high-side FET drive level to less than 6V, as well as preventing high dV/dt transients from causing erratic switching block block Brings Simplicity to GaNTexas Instruments (TI) solves the challenges of driving GaN Power FETs with LM5113 the industry s first 100V integrated half-bridge driver for GaN Power FETs and LM5114 single low-side driver with independent source and sink outputs.

3 Compared to discrete implementations, these Drivers provide significant PCB area savings to achieve industry-best Power density and efficiency while simplifying the task of driving GaN FETs reliably. The LM5113 uses proprietary technology to regulate the high-side gate voltage at approximately to optimally drive GaN Power FETs without exceeding the maximum gate -source voltage rating of 6V. The bridge driver also features independent sink and source outputs for flexibility in the turn-on strength with respect to the turn-off strength.

4 The LM5113 has a low impedance pull down path of to prevent undesired dV/dt turn-on and provides a fast turn-off path of the low threshold voltage GaN Power LM5114 features a high drive capability needed in high- Power applications where larger or paralleled FETs are used. Strong pull down strength makes it ideal to drive the new Enhancement mode GaN FETs. The independent source and sink outputs eliminate the need for a diode in the driver path and allow tight control of the rise and fall Power brick featuring the EPC2001 eGaN FET and LM5113 GaN FET for more information.

5 84%86%88%90%92%94%96%0246810121416 EfficiencyOutput Current (A)36 VIN GaN FET36V MOSFET48 VIN GaN FET48V MOSFET60 VIN GaN FET60V MOSFETD iscrete driver solution shown next to an integrated LM5113 driver. The LM5113 delivers tremendous efficiency and PCB area savings compared to discrete FET efficiency vs traditional MOSFET. Input 36 to 75V; regulated output 12V; switching frequency at 333 KHz GaN FET, 250 KHz Current (A)Bootstrap Voltage (V)678910 Bridge Driver Without Bootstrap Regulation Maximum GaN Power FET VGS LM5113 with Bootstrap Regulation LM5113 bootstrap voltage regulation, synchronous buck converter evaluation board.

6 Input 48V; output 10V; switching frequency at 800 Notice: The products and services of Texas Instruments Incorporated and its subsidiaries described herein are sold subject to TI s standard terms and conditions of sale. Customers are advised to obtain the most current and complete information about TI products and services before placing orders. TI assumes no liability for applications assistance, customer s applications or product designs, software performance, or infringement of patents. The publication of information regarding any other company s products or services does not constitute TI s approval, warranty or endorsement platform bar is a trademark of Texas Instruments 2012 Texas Instruments IncorporatedPrinted in by (Almaden Press, San Jose, CA)IMPORTANTNOTICET exasInstrumentsIncorporatedanditssubsidi aries(TI)

7 Reservetherighttomakecorrections,modific ations,enhancements,improvements, s accordancewithTI s ,testingofallparametersofeachproductis , ,eitherexpressorimplied,is grantedunderanyTIpatentright,copyright,m askworkright,orotherTIintellectualproper tyrightrelatingtoanycombination,machine, orprocessin licensefroma thirdpartyunderthepatentsorotherintellec tualpropertyofthethirdparty,ora TIdatabooksordatasheetsis permissibleonlyif reproductionis withoutalterationandis accompaniedbyallassociatedwarranties,con ditions,limitations, safety-criticalapplications(suchaslifesu pport)

8 Wherea failureoftheTIproductwouldreasonablybeex pectedtocauseseverepersonalinjuryordeath , thesafetyandregulatoryramificationsofthe irapplications,andacknowledgeandagreetha ttheyaresolelyresponsibleforalllegal,reg ulatoryandsafety-relatedrequirementsconc erningtheirproductsandanyuseofTIproducts in suchsafety-criticalapplications, , military/aerospaceapplicationsorenvironm entsunlesstheTIproductsarespecificallyde signatedbyTIasmilitary-gradeor"enhancedp lastic." solelyattheBuyer's risk,andthattheyaresolelyresponsibleforc ompliancewithalllegalandregulatoryrequir ementsin ,if theyuseanynon-designatedproductsin automotiveapplications, , :TexasInstruments,PostOfficeBox655303,Da llas,Texas75265 Copyright 2012,TexasInstrumentsIncorporat


Related search queries