GP1S51VJ000F Gap : 3mm Slit : 0.5mm …

1 GP1S51VJ000F1 Sheet No.: D3-A02401 FENDate Oct. 3. 2005 SHARP CorporationNotice The content of data sheet is subject to change without prior the absence of confi rmation by device specifi cation sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specifi cation sheets before using any SHARP : 3mm Slit : Phototransistor Output, Case package Transmissive Photointerrupter DescriptionGP1S51VJ000F is a standard, phototransistor output, transmissive photointerrupter with opposing emitter and detector in a case, providing non-contact sensing. For this family of devices, the emitter and detector are insert-ed in a case, resulting in a through-hole case includes additional screw fixing holes, on both sides diameter.

2 Features1. Transmissive with phototransistor output2. Highlights: Verical Slit for alternate motion detection Includes additional screw fi xing holes3. Key Parameters: Gap Width : 3mm Slit Width (detector side): Package : 10 18mm4. RoHS directive compliant Agency approvals/Compliance1. Compliant with RoHS directive Applications1. General purpose detection of object presence or Example : Printer, FAX, Optical storage unit2 Sheet No.: D3-A02401 FENGP1S51VJ000F Internal Connection Diagram Outline Dimensions(Unit : mm)Product mass : approx. Unspecifi ed tolerance shall be as follows ;Dimensions (d)Toleranced 6 <d 18 ( ) : Reference dimensionsAnodeCathodeCollectorEmitter11 243234 Top view( )(Detctor center) + B B-B + + code(Both side)( )( ) R3A-A mark S Model viewDip soldering material : Sn 3Ag No.: D3-A02401 FENGP1S51VJ000 Frepeats in a 10 year cycleDate code (2 digit)1st digit2nd digitYear of productionMonth of ::12 ZCountry of originJapan, Indonesia or Philippines(Indicated on the packing case)4 Sheet No.

3 : D3-A02401 FENGP1S51VJ000F Absolute Maximum Ratings Electro-optical Characteristics(Ta=25 C)ParameterSymbolRatingUnitInput 1 Forward currentIF50mA 1, 2 Peak forward currentIFM1 AReverse voltageVR6 VPower dissipationP75mWOutputCollector-emitter voltageVCEO35 VEmitter-collector voltageVECO6 VCollector currentIC20mA 1 Collector power dissipationPC75mWOperating temperatureTopr 25 to +85 CStorage temperatureTstg 40 to +100 C 3 Soldering temperatureTsol260 C 1 Refer to Fig. 1, 2, 3 2 Pulse width 100 s, Duty ratio= 3 For 5s or less(Ta=25 C) voltageVFIF=20mA forward voltageVFMIFM= currentIRVR=3V 10 AOutput Collector dark currentICEOVCE=20V 1100nATransfercharac-teristicsCollector currentICVCE=5V, IF= 5mACollector-emitter saturation voltageVCE(sat)IF=40mA, IC= timeRise timetrVCE=2V, IC=2mA, RL=100 315 sFall timetf 4205 Sheet No.: Collector Current vs. Forward Collector Current vs.

4 Collector-emitter Peak Forward Current vs. Duty Forward Current vs. Forward VoltagePeak forward current IFM (mA)Duty ratio1001010 210 11 000 Pulse width 100 sTa=25 C1 Forward current IF (mA)Foward voltage VF (V) C0 C 25 C50 CTa=75 CCollector current IC (mA)Forward current IF (mA) 00 VCE=5 VTa=25 C128106421020304050 Collector current IC (mA)Collector-emitter VCE (V) 78910675634210054321IF=50mA40mA30mA20mA1 0mATa=25 C Forward Current vs. Ambient Collector Power Dissipation vs. Ambient TemperatureForward current IF (mA)Ambient temperature Ta ( C) 250255075 851000102030405060 Collector power dissipation PC (mW)Ambient temperature Ta ( C) 250255075 8510002015406080100120756 Sheet No.: Collector Current vs. Ambient Collector-emitter Saturation Voltage vs.

5 Ambient Response Time vs. Load Test Circuit for Response Frequency Collector Dark Current vs. Ambient TemperatureCollector current IC (mA)Ambient temperature Ta ( C) 025 2550100754IF=20mAVCE=5V3210 Response time ( s)Load resistance RL (k ) C1001tftrtdtsCollector-emitter saturation voltage VCE (sat) (V)Ambient temperature Ta ( C) IF=40mAIC= 2575100502500 Voltage gain AV (dB)Frequency f (Hz) 1061051040 5 10 15 20103102 VCE=2 VIC=2mATa=25 C1k 100 RL= 10k 5 Collector dark current ICEO (A)Ambient temperature Ta ( C) 7550100250 25 VCE=20V10 1010 910 810 710 610%OutputInput90%InputOutputRDVCCRL tdtrtstf7 Sheet No.: Detecting Position Characteristics (1) Detecting Position Characteristics (2)Relative collector current (%)Shield moving distance L (mm) 1 + IF=20mA, VCE=5 VTa=25 C0 Relative collector current (%) 3050100 2 1012345 +0 LShieldSensorIF=20mA, VCE=5 VTa=25 CShield moving distance L (mm) Remarks : Please be aware that all data in the graph are just for reference and not for No.

6 : D3-A02401 FENGP1S51VJ000F Design Considerations Design guide1) Prevention of detection errorTo prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external ) Position of opaque boardOpaque board shall be installed at place 4mm or more from the top of elements.(Example) 4mm or moreThis product is not designed against irradiation and incorporates non-coherent IRED. DegradationIn general, the emission of the IRED used in photocouplers will degrade over the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. PartsThis product is assembled using the below parts. Photodetector (qty. : 1)CategoryMaterialMaximum Sensitivity wavelength (nm)Sensitivity wavelength (nm)Response time ( s)PhototransistorSilicon (Si)800400 to 1 2003 Photo emitter (qty.

7 : 1)CategoryMaterialMaximum light emitting wavelength (nm)I/O Frequency (MHz)Infrared emitting diode(non-coherent)Gallium arsenide (GaAs) MaterialCaseLead frame platingBlack NORYL resinSolder dip. (Sn 3Ag )9 Sheet No.: D3-A02401 FENGP1S51VJ000F Manufacturing Guidelines Soldering MethodFlow Soldering:Soldering should be completed below 260 C and within 5 take care not to let any external force exert on lead don't do soldering with preheating, and please don't do soldering by refl solderingHand soldering should be completed within 3 s when the point of solder iron is below 350 solder within one don't touch the terminals directly by soldering product shall treat at normal noticePlease test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering fl ux, which is used in soldering, may crack the package due to synergistic effect of alcohol in fl ux and the rise in temperature by heat in soldering.

8 Therefore, in using fl ux, please make sure that it does not have any infl uence on appearance and reliability of the No.: D3-A02401 FENGP1S51VJ000F Cleaning instructionsSolvent cleaning :Solvent temperature should be 45 C or below. Immersion time should be 3 minutes or cleaning :The affect to device by ultrasonic cleaning is different by cleaning bath size, ultrasonic power output, cleaning time, PCB size or device mounting condition test it in actual using condition and confi rm that doesn't occur any defect before starting the ultrasonic solvent materials :Ethyl alcohol, Methyl alcohol and Isopropyl alcohol. Presence of ODCThis product shall not contain the following they are not used in the production process for this substances : CFCs, Halon, Carbon tetrachloride, (Methylchloroform)Specifi c brominated fl ame retardants such as the PBBOs and PBBs are not used in this product at product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).

9 Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE).11 Sheet No.: D3-A02401 FENGP1S51VJ000F Package specifi cation Case packagePackage materialsAnti-static plastic bag : PolyethtyleneMoltopren : UrethanePartition : Corrugated fi berboardPacking case : Corrugated fi berboardPackage method100 pcs of products shall be packaged in a plastic bag, Ends shall be fi xed by stoppers. The bottom ot the packing case is covered with moltopren, and the partition is set in the packing case. Each partition should have 1 plastic 10 plastic bags containing a product are put in the packing should be located after all product are settled (1 packing contains 1 000 pcs).Packing compositionMoltoprenPartitionAnti-static plastic bagPacking case12 Sheet No.: D3-A02401 FENGP1S51VJ000F Important Notices The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights.

10 SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifi cations, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specifi ed in the relevant specifi cation sheet nor meet the following conditions:(i) The devices in this publication are designed for use in general electronic equipment designs such as:--- Personal computers--- Offi ce automation equipment--- Telecommunication equipment [terminal]--- Test and measurement equipment--- Industrial control--- Audio visual equipment--- Consumer electronics(ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as.