High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

1 Semiconductors Rev. , 13-Mar-141 Document Number: 81009 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Power Infrared Emitting Diode, 940 nm, GaAlAs, MQWDESCRIPTIONTSAL6100 is an Infrared , 940 nm Emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant Power and high speed molded in a blue-gray plastic Package type: leaded Package form: T-1 Dimensions (in mm): 5 Peak wavelength: p = 940 nm High reliability High radiant Power High radiant intensity Angle of half intensity: = 10 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Material categorization: For definitions of compliance please see APPLICATIONS Infrared remote control units with high Power reqirements Free air transmission systems Infrared source for optical counters and card readers IR source for smoke detectorsNote Test conditions see table Basic Characteristics Note MOQ: minimum order quantity94 8389 PRODUCT SUMMARYCOMPONENTIe (mW/sr) (deg) p (nm)tr (ns)TSAL6100170 1094015 ORDERING INFORMATIONORDERING CODEPACKAGINGREMARKSPACKAGE FORMTSAL6100 BulkMOQ.

2 4000 pcs, 4000 pcs/bulkT-1 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONSYMBOLVALUEUNITR everse voltageVR5 VForward currentIF100mAPeak forward currenttp/T = , tp = 100 sIFM200mASurge forward currenttp = 100 dissipationPV160mWJunction temperatureTj100 COperating temperature rangeTamb-40 to +85 CStorage temperature rangeTstg-40 to +100 CSoldering temperaturet 5 s, 2 mm from caseTsd260 CThermal resistance junction/ambientJ-STD-051, leads 7 mm soldered on PCBRthJA230 Semiconductors Rev. , 13-Mar-142 Document Number: 81009 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature0204060801001201401601800 10203040506070809010021211 Tamb - Ambient Temperature ( C) PV - Power Dissipation (mW)RthJA = 230 K/W0204060801001200 10 203040 50607080 90100 Tamb - Ambient Temperature ( C)21212IF - Forward Current (mA)RthJA = 230 K/WBASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST voltageIF = 100 mA, tp = 20 = 1 A, tp = 100 coefficient of VFIF = 1 currentVR = 5 VIR10 AJunction capacitanceVR = 0 V, f = 1 MHz, E = 0Cj40pFRadiant intensityIF = 100 mA, tp = 20 msIe80170400mW/srIF = 1 A, tp = 100 sIe6501450mW/srRadiant powerIF = 100 mA, tp = 20 ms e40mWTemperature coefficient of eIF = 20 mATK of half intensity 10degPeak wavelengthIF = 100 mA p940nmSpectral bandwidthIF = 100 mA 30nmTemperature coefficient of pIF = 100 mATK timeIF = 100 mAtr15nsFall timeIF = 100 Semiconductors Rev.

3 , 13-Mar-143 Document Number: 81009 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 4 - Forward Current vs. Forward Voltage Fig. 5 - Radiant Intensity vs. Forward Current Fig. 6 - Radiant Power vs. Forward Current Fig. 7 - Rel. Radiant Intensity/ Power vs. Ambient Temperature Fig. 8 - Relative Radiant Power vs. Wavelengthtp- Pulse Duration (ms) 96 1198710 010110 110 -110-110010210-2I - Forward Current (A)F tp/T = = 1 A (Single Pulse) 110100100001 23tp = 100 stp/T= - Forward Voltage (V)21534IF - Forward Current (mA) 1 10 100 1000 10000 1 10 100 1000 Ie - Radiant Intensity (mW/sr) IF - Forward Current (mA) tp = 100 s 1 10 100 1000 1 10 100 1000 Phie - Radiant Power (mW) IF - Forward Current (mA) tp = 100 s -101050 0100 Ie rel;140 94 7993IF = 20 mA e rel T amb- Ambient Temperature ( C)01020304050607080901008408809209601000 1040 - Wavelength (nm)21445 e rel - Relative Radiant Power (%)IF = 30 Semiconductors Rev.

4 , 13-Mar-144 Document Number: 81009 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 9 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in rel - Relative Radiant 30 10 20 40 50 60 70 80 - Angular 5 not planetechnical drawingsaccording to : 3; < min.( ) + + (sphere) + Disclaimer Revision: 08-Feb-171 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.

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