半導体電子工学II - kobe-u.ac.jp

1 kobe University09/01/21 II IIKobe University09/01/21 ) 1 10 1 I ( )2 10 8 I ( )3 10 15 pn (1)4 10 22 pn (2)5 10 29 pn (3)6 11 5 pn 4 MOS (1)7 11 12 MOS (2) )8 11 19 MOSFET 1 9 11 26 MOSFET 2 10 12 3 MOSFET 3 11 12 10 MOSFET 4 12 12 17 MOSFET 5 13 12 24 MOSFET 6 14 1 14 Bipolar Device (1) 15 1 21 Bipolar Device (2) MOSFET kobe University MOS FET 09/01/21 IIKobe University !( research )09/01/21 IINeed Oriented Seed Oriented kobe University IEDM CMOS FET09/01/21 University of California, Berkeley Feedback FET p-i-n FET SOI silicon on insulator FET S 2mV/decade 2008 International Electron Devices Meeting 2008 IEDM kobe University IEDM Intel IBM III-V MOS FET09/01/21 Intel TaN/ZrO2 5nm EOT InGaAs MOS FET In In 53 2800cm2/Vs MOS FET S InP GaAs Si III-V MOS FET CMOS kobe University 09/01/21 II kobe University4 09/01/21 IIKobe University09/01/21 IIKobe University 09/01/21 IIKobe

2 Universitynpn 09/01/21 IIKobe Universitynpn 09/01/21 IIKobe University 09/01/21 IIKobe Universitynpn 09/01/21 IIKobe University 09/01/21 IIKobe University 09/01/21 IIKobe University 09/01/21 IIKobe University 09/01/21 IIKobe University ? ? 2 09/01/21 IIKobe University Vision & Hard Work iPS IIKobe University 09/01/21 IIKobe University gm), (gd).. GDmVIg =D1rVIgDDd= = MOSFET 09/01/21 IImg: (mm) --- 10~100mS/mm h kobe University 09/01/21 IIKobe UniversityMOSFET 09/01/21 II()TGSVVCLW oxn mgDSoxnVCLW ()TGSVVCLW oxn dgKobe University 09/01/21 IIgvg~mgv~GSSDGSCGDC dgdv~in~id~iLvLVLWCgf 222s2 DnoxmT == LG=100nm 100 GHz = 1 0dB kobe University 09/01/21 II kobe University ~S09/01/21 II() += = )(== S kobe University 09/01/21 II kobe University (1)09/01/21 IIKobe University (2)09/01/21 IIKobe University (3)09/01/21 IIKobe University 09/01/21 IIKobe University ()()

3 Xdxxd =22 =TknnBiFi exp =TknpBFii expneDEenJnnn += peDEepJppp = ()() () ()txRtxGtxJxettxnnnn,,,1, + = ()() () ()txRtxGtxJxettxpppp,,,1, + = 09/01/21 IIKobe University =pp0~pp0 09/01/21 IIKobe University )(0)]([eexpxippnpB ==)(0)]([eexpxipnnnB == 0=x spsnn e0=spspp =e00pn0pp TkeB/= =iABipBBnNeTknpeTklnln0 ()0 =s09/01/21 IIKobe University ())(pnNNexAD+ = 00ppADpnNN = ()()[]()[]{}1e1e00 = xpxpnpex ()()[]()[]{}1e1e000Si22 = xpxpnpKedxxd .. dxd dxd 09/01/21 IIKobe University ()() = =00,2)(ppDpnxFLdxxdxE ()()()()()()2/100001)1(, + += xepnxepnxFxppxpp ( ) () == =000Si0Si,20ppsDSpnFLKxEKQ m [C m-2]B 2B 2p00 SiBepTKkLD = 09/01/21 IIKobe University09/01/21 II ()()()DDTGoxDTGoxTGoxDVVVVCLWEVVVCVVCWI = + =212 ( ) kobe University Threshold Voltage TV)2(BS =()BA0 SiB22 eNKQ =thV()

4 OxBA0 SiFBBT222 CeNKVV ++=09/01/21 IIKobe University MOSFET IDS-VGS IDS-VDS VDS=4 V, VGS=4 V, VBS=0 V09/01/21 IIKobe UniversityMOSFET E/D09/01/21 IIKobe University VT 0 SiSi K=[m-2]09/01/21 IIKobe University QsoxCQVSsG = B 2B B B 2 Qs 23 Qs ( )09/01/21 IIKobe University 09/01/21 ? IIS B B2 B