ION-TOF GmbH 15 aße Heisenbergstr nster|Germany 48149 ...

1 Artwork: : GmbHHeisenbergstra e 1548149 M nster|GermanyPhone +49 (0)251 1622 100 Fax +49 (0)251 1622 secondary ion mass spectrometry (TOF-SIMS) is a very sensitive surface analyticaltechnique, well established for many industrial and research applications. It provides detailed elementaland molecular information about surfaces, thin layers, interfaces, and full three-dimensionalanalysis of the samples. The use is widespread, including semiconductors, polymers, paint, coatings,glass, paper, metals, ceramics, biomaterials, 5 is the fifth generation of high-end TOF-SIMS instruments developed over the last20 years. Its design guarantees optimum performance in all fields of SIMS features of the 5 are:Ultra high sensitivity for molecular species by optimised cluster ion sourcesOutstanding performance for low energy depth profiling Sophisticated software for ease of operation and data handling Modular construction for configuration and upgrade flexibilityErgonomic design with compact footprintSuperior Pe rformance for all SIMS ApplicationsFor TOF-SIMS analysis, a solid sample surface isbombarded with a pulsed primary ion atomic and molecular ions are emitted from theouter layers of the surface and extracted.

2 Their massis measured by their time of flight to the analysis cycle is repeated at high frequency togenerate the complete mass spectrum with highdynamic range. Based on this principle the 5has a powerful combination of detection of all ions, organic and inorganic Unlimited mass rangeHigh mass resolution at full transmissionHigh lateral and in-depth resolution High sensitivity in the ppm/ppb rangeThe great flexibility of the 5 is demonstratedby its four integral modes of operation. Few techniqueshave the capability to analyse points, surfaces,in-depth and in three a very wide range of applications it providesfast, cost-effective and often unique solutions foryour analytical well as comprehensive on-line analysis, theparallel mass detection of the 5 providesthe means to carry out Retrospective of the knowledge about the samplebefore measurement, the data can be exploredafterwards to look for unexpected results, such asunknown structures, contaminants at interfacesand so on.

3 The x, y, z coordinates and mass of everysecondary ion reaching the detector are software can reconstruct spectra from anycoordinate or group of coordinates, images fromany section, vertical or horizontal, depth profiles fromany selected area and various 3D views as AnalysisDon t miss anything Retrospective AnalysisyScanned PrimaryIon BeamSecondary Ions:x, y, z, masszSuccessiveIon ImagesxDepthProfilingSurfaceSpectroscopy 3 DAnalysisSurfaceImagingDetectorIon MirrorExtractorIon GunRasterPulsingSystemFocusingOpticsSamp leTransportOpticsExamplesSpectrumSurface SpectroscopyExamplesThe detection and quantification of trace metalsis an important analytical task in the semiconductorindustry. The 5 is able to detect all elements,even light ones. Due to the high mass resolutionand the very low noise level, excellent detection limitsdown to 107 atoms/cm2 can be limits are achieved even from small areas andthe 5 can therefore be applied to patternedwafers.

4 By using external standards, good quanti-fication is chemical mapping of elements and moleculesis an important part of many modern analytical 5 covers the full range of SIMS imagingapplications, including elemental imaging, organicimaging with optimised cluster ion sources, andlarge area mapping by sample stage sample orientation, large motorised5-axes sample stage, and charge neutralisation areideal for the analysis of all kinds of real world samples,so there are no limitations due to shape, topography,or electrical and performance make the 5 theinstrument of choice for all SIMS imaging technological fields require the understandingand processing of the molecular structure ofsurfaces. Static SIMS is the ideal analytical techniquebecause it detects both large, complex molecularions and fragment ions with ultimate sensitivity toprovide detailed structural information.

5 The excellenttransmission of the 5 analyser, the highmass range and advanced cluster ion sources makethe 5 the perfect tool for organic materialssuch as polymers, biomaterials, MetalsOrganic MaterialsFrom Sub-Micron to Large AreaThe 5 provides excellent sample observation and navigation video cameras for real-time sample viewing, pre-loading high resolution samplescanner, ion induced secondary electron imaging and sophisticated navigationsoftware supply all information necessary for precise sample positioning. The soft-ware complies with the data standard of all defect review NavigationDetails of a spectrum from a Silicon wafer mass resolution and accuracy allow the unambiguousidentification of trace disk read/write of view: 25 x 25 m2AI Ti Overlay: Cr, Fe, NiSpectrum of a high-tech lubricant (fluorinated polyether)showing the oligomer distribution in the high mass ImagingBlooming effect of additives on formed of view: 300 x 300 m2 Animal brain of view: 4 x 4 mm2 Polypropylene (PP)AntioxidantFatty acid residuesBlood componentsPhospholipidsStabiliserOverlay : PP, Antioxidant, StabiliserFor Surface Imaging a fine-focused primary ion beamscans the surface resulting in mass resolved secondary ionimages (chemical maps).

6 High lateral resolution (< 60 nm)High precision raster (up to 1024 x 1024 pixel resolution) Fast image acquisition (up to 50 kHz pixel frequency)Video control for precise sample navigationField of view from m2 to cm2 Surface Spectroscopy provides detailed elementaland molecular information from the outer of primary ion species(Ga, Bin, O2, Cs, Ar, Xe, SF5, C60)High sensitivity in the ppm/ppb rangeHigh mass resolution and accuracyeven on insulating samples High mass range103102101100 SiCI+Cu+Fe+Si2+ (u) (u)intensity20004000600080001000054321x1 03nF CF CF2 O CF2 CF3CF3 ExampleExamples3D AnalysisDepth ProfilingDynamic SIMSD epth ProfileThe major advantage of dual beam depth profilingis that both ion beams can be optimised the sputter ion beam is optimised for deliveringhigh and stable currents at low energies using reactivespecies, the analysis ion beam (Liquid Metal Ion Gun)is optimised for lateral and mass high depth resolution the sputter ion columncan operate at very low energies.

7 Maximum datarates with a repetition frequency of up to 50 kHzgive detection limits down to 1015 atoms/cm3 evenfor ultra-shallow systems. At higher sputter beamenergy, samples of considerable thickness can beanalysed within a reasonable measurement to the very efficient electron flood gun, perfectcharge compensation is reached for profiling alltypes of insulating mass resolution in combination with theRetrospective Analysis makes the 5 a verypowerful depth profiling tool for multi-component-layered samples, contaminant screening, diffusionprofiling and unknown samples. Dual Beam Depth Profiling3D Analysis3D RenderImageDepth Profile3D Analysis is ideal for the investigation of complex and unknownstructures or defects. In particular the composition, shape and positionof features and defects can be visualised. Applications include:Manufactured structures: TFT Analysis: buried Science: grain boundaries, profile of a 3 keV Arsenic implant in eV Cesium sputteringSpectrumFor Depth Profiling two ion beams operate in theDual Beam Mode.

8 While the first beam is sputteringa crater, the second beam is progressively analysingthe crater bottom. Depth resolution better than 1 nmHigh mass resolution Sputter speed of up to 10 m/h Ideally suited for insulatorsThe 3D visualisation of complex samplestructures is possible by combining spectral,imaging and depth mass detectionHigh depth resolutionHigh image resolution3D rendering softwarezxySiMoInMass resolved 3D view of a TFT display pixelAnalysed volume 100 x 100 x m3 Section 1 Section 2 Section 3 Surface Depth of mDepth of mOverlays (Si, Mo, In) of horizontal cross sectionsOverlays (Si, Mo, In) of vertical cross mzxy321intensityAs concentration (atoms/cm3)01020 30405060708090106102101100103105104depth (nm)1022102110201019101810171016 AsSi_Si_depth ( m) profile through a multilayercoating on a halogen spotlight OxidesTitanium OxidesAnalysis UnlimitedModern life is characterised by continuous develop-ment and technological change.

9 The capacity forunderstanding, controlling and taking advantageof new ideas is essential. As a result, analyticalinstrumentation has to expand its performance tofulfill current and future analytical 5 provides solutions for many of today shigh-tech industries. Our mission is to develop thetechnique and expand its potential for futureapplications. Considerable research effort as well asclose co-operation with our customers will continueto create new possibilities, thus keeping our instru-ments at the leading edge of AheadSemiconductorsPolymersPaint and AnalysisQuality ControlDevelopmentReverse of Applications Sample size up to 100 mm, 200 mm and 300 mm 5-axes sample stage Modular construction with configuration flexibility Wide range of ion sources:Ga, Bin, O2, Cs, Ar, Xe, SF5, C60 Temperature controlled heating and cooling of the sample during the analysis Temperature controlled heating and cooling of the sample in the loadlock Cryo sample transfer Cs-Xe co-sputtering Laser post-ionisation 20 kV post-accelaration Patented Burst Mode WindowsTM operating systemCustomised ConfigurationsION-TOF listens to its customers, and has a strongtradition of collaboration with them to incorporatenew ideas for hardware and software.

10 The modulardesign of the 5 is ideal for particular due to the horizontal sample concepta large variety of UHV sample preparation chamberscan easily be coupled to the instrument. These cham-bers can also be used to accommodate complemen-tary analysis techniques such as XPS or is also possible to couple the 5 to otherfloor standing high-end and Accessories Comprehensive software package library and search engine Real-time sample observation Pre-loading high resolution sample scanner Charge compensation by electron flood gun Ion induced secondary electron imaging High precision raster with up to 1024 x 1024 pixels Up to 50 kHz repetition frequency Ergonomic design with compact footprint Internal bakeout Modular electronics for plug-in maintenance Oil and water free low noise vacuum system High uptime and easy maintenanceartwork: : GmbHHeisenbergstra e 1548149 M nster|GermanyPhone +49 (0)251 1622 100 Fax +49 (0)251 1622