Transcription of 炭素材の黒鉛化 - 九州大学（KYUSHU UNIVERSITY）
1 3 3- 1 2 Formation of carbons from organic materials3 Texture, structure and physical properties of pitch based CFs3 CodeMesophase pitch based CFGraphite single crystalIsotropic pitch based CFGlassy carbon(2000-2500oC)PANbased CF(Middle grade modulus)Fiber diameter ( m)7~1012~185~8 Struc-turesApparent density(g/cm3) ~ ~ ~ ~ density(g/cm3) ~ ~ pore (%) ~2930~3420 Interlayered spacing(nm) ~ ~ & Lc (nm)39, 38>1002~32~42, 2 Physi-calpro-pertiesTensile strength (MPa)1500~4200100000500~850600~12002500~ 7000 Young s modulus (GPa)50~950106020~4022~33200~350 Elongation property (%) ~ ~ ~ conductivity(W/mK)~900 (1100)19504~238~2510 Resistivity ( Ohm m)2~ ~5040~4510~20 CTE 10-6 K) ~ ~ tensile strength of IPCF comes from low molecular carbon structuresStructures Structural units Nano-phased unitsSpaces Pore size and homogeneity Pore amountsSurfaces Edges (Kinds and amounts) Basals (Perfectness and Orientation)
2 +NanoSyntheses Mass-productionControls ImprovingPerformancesand FunctionsHybridization ImprovingPerformancesand Functions CreatingNew FunctionsHighperformancesHighfunctionsNe wfunctionsApplicationsProductions45 Graphitization 5 1500 C 1090 kJ/mol 3000 C d002 1500 C nm d002 2000 C 3000 C nm Warren P1 d002 3000 C 6 XRD 7 Degree of Graphitization 7 2000 C d002 nm Warren X hk hk0 hk1 P1 Franklin p M ring g Warren P1 X , P1 Warren , ,59 (1941)693-698 2001 38-43.
3 8 Warren P1 P1 Warren hk AB La hk P1 10 11 9 M ring Maire g g M ring Maire M ring 1 g nm g2 nm (1-g)2 1/2 ( + ) nm 2g (1-g) d002= g+ (1 g)[nm] 10 d Interlayer spacing d002 Warren X d002 002 bragg 2000 C d002 nm 3000 C nm La &Lc a La c Lc X X Scherrer Lc 002 Lc 112 X Scherrer.
4 XRD L L=K / cos Scherrer 11 XRD JSPS Gakushin-method for X-ray diffraction of carbon X X X X d X 2dsin = d n X X X X X 117 12 13 Raman / Raman * 14 Catalytic Graphitization (a) (d) 4 G T A A Tn G G T 15 Multiphase Graphitization A G T Tn X A G T 3 A G T 3 A G 2 16 Pressurized
5 Graphitization (PV-7) 004 004 , (homogeneousgraphitizationprocess), ,1 , , ,004 53. 5 ( ) , 54. 6 (d002 ) , 54. 6 ( ) (heterogeneousgraphitizationprocess) , 1 1 G, 17 Graphitizationunder Stress . GPa , 1600 C Stretchgraphitization (CF) C/C CF CF CF Pressuregraphitization 18
