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LDMOS Technology for RF Power Amplifiers
3 Ampl the tre LDMOS Technolo or RF Power Amplers the intrinsic LDMOS technology (both 30 and 50 V). The RF measurements are done with load–pull setup for on-wafer and unmatched packaged devices. In the following paragraph, the evolution of performance is shown for both unmatched low power and matched power devices. Furthermore, the
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BLF188XR; BLF188XRS
www.ampleon.com1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
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