Transcription of LITE-ON TECHNOLOGY CORPORATION - …
1 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * High crrent transfer ratio ( CTR : MIN. 100% at IF = 10mA, VCE = 10V ) * Response time ( ton : TYP. 3 s at VCC = 10V, IC = 2mA, RL = 100 ) * Input-output isolation voltage LTV-4N35 series : Viso = 3,550 Vrms LTV-4N37 series : Viso = 1,500 Vrms * Dual-in-line package : LTV-4N35, LTV-4N37 * Wide lead spacing package : LTV-4N35M, LTV-4N37M * Surface mounting package : LTV-4N35S, LTV-4N37S * Tape and reel packaging : LTV-4N35S-TA, LTV-4N37S-TA, LTV-4N35S-TA1, LTV-4N37S-TA1 * UL approved ( No. E113898 ) * TUV approved ( No. R9653630 ) * CSA approved ( No. CA91533-1 ) * FIMKO approved ( No. 193422-01 ) * NEMKO approved ( No. P96103013 ) * DEMKO approved ( No. 303985 ) * SEMKO approved ( No. 9646047 / 01-30 ) * VDE approved ( No. 094722 ) Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 ) Page : 1 of 9 BNS-OD-C131/A4 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-4N35 : LTV-4N37 : *1.
2 Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand). Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 ) Page : 2of9 BNS-OD-C131/A4 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-4N35M : LTV-4N37M : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand). Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 ) Page : 3of9 BNS-OD-C131/A4 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-4N35S : LTV-4N37S : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand). Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 ) Page : 4of9 BNS-OD-C131/A4 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only TAPING DIMENSIONS LTV-4N35S-TA , LTV-4N37S-TA : LTV-4N35S-TA1 , LTV-4N37S-TA1 : Description Symbol Dimensions in mm ( inches ) Tape wide W 16 (.)
3 63 ) Pitch of sprocket holes P0 4 ( .15 ) Distance of compartment F P2 ( .295 ) 2 ( .079 ) Distance of compartment to compartment P1 12 ( .472 ) Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 ) Page : 5of9 BNS-OD-C131/A4 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only ABSOLUTE MAXIMUM RATING ( Ta = 25 C ) PARAMETER SYMBOLRATING UNIT Forward Current IF 60 mA Reverse Voltage VR 6 V INPUT Power Dissipation P 100 mW Collector - Emitter Voltage VCEO 30 V Emitter - Collector Voltage VECO 7 V Collector - Base Voltage VCBO 70 V Collector Current IC 100 mA OUTPUT
4 Collector Power Dissipation PC 300 mW Total Power Dissipation Ptot 350 mW LTV-4N35 series 3,550 *1 Isolation Voltage LTV-4N37 series Viso 1,500 Vrms Operating Temperature Topr -55 ~ +100 C Storage Temperature Tstg -55 ~ +150 C *2 Soldering Temperature Tsol 260 C *1. AC For 1 Minute, = 40 ~ 60% Isolation voltage shall be measured using the following method. (1) Short between anode and cathode on the primary side and between collector, emitter and base on the secondary side. (2) The isolation voltage tester with zero-cross circuit shall be used. (3) The waveform of applied voltage shall be a sine wave. *2. For 10 Seconds Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 ) Page : 6of9 BNS-OD-C131/A4 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only ELECTRICAL - OPTICAL CHARACTERISTICS ( Ta = 25 C ) PARAMETER SYMBOL MIN.
5 TYP. MAX. UNIT CONDITIONS Forward Voltage VF V IF=10mA Reverse Current IR 10 A VR=4V INPUT Terminal Capacitance Ct 50 pF V=0, f=1 KHz Ta=25 C 50 nA VCE=10V, IF=0 Collector Dark Current Ta=100 CICEO 500 A VCE=30V, IF=0 Collector-Emitter Breakdown Voltage BVCEO 30 V IC= IF=0 Emitter-Collector Breakdown Voltage BVECO 7 V IE=10 A IF=0 OUTPUT Collector-Base Breakdown Voltage BVCBO 70 V IC= IF=0 Collector Current IC 10 mA * Current Transfer Ratio CTR 100 % IF=10mA VCE=10V Collector-Emitter Saturation Voltage VCE(sat) V IF=50mA IC=2mA Isolation Resistance Riso 5 10101 1011 DC500V 40 ~ 60% Floating Capacitance Cf 1 pF V=0, f=1 MHz Response Time (Turn-on)
6 Ton 3 10 s TRANSFER CHARACTERISTICS Response Time (Turn-off)toff 3 10 s VCC=10V, IC=2mA RL=100 * CTRII100%CF= Part No. : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 ) Page : 7of9 BNS-OD-C131/A4 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only CHARACTERISTICS CURVES Forward Current vs. Collector Power Dissipation Forward Current vs. ForwardFF608040100200-550255075125100100 75 C50 C25 C0 C-25 C101555020F5mA2mAPc(MAX.)I = 15mATa= 25 CTa= 25 CV = 10V302000521010 FCollector-emitter Collector Current Current Transfer Ratio = Relative Current Transfer Ratiovs. Ambient Temperature15010050 0-550255075100-25 Forward current I (mA)Forward current I (mA)FCollector current Ic (mA)Relative current transfer ratio (%)Current transfer ratio CTR (%)Collector Power dissipation Pc (mW)Ambient temperature Ta ( C)Forward voltage V (V)Collector-emitter voltage V (V)Ambient temperature Ta ( C)Forward current I (mA)Ambient temperature Ta ( C)Temperatureoooooooooo100k100kVoltageVC E= 10 VIF=10mA Part No.
7 : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 ) Page : 8of9 BNS-OD-C131/A4 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only CHARACTERISTICS CURVES Collector-emitter Saturation Collector Dark Current Response Time vs. Frequency Collector-emitter SaturationVoltage vs. Forward CurrentFCE-6-7-8-9-10-11Ic= 25 CV = 5 VIc= 2mATa= 25 CFIc= 2mAI = 50mAV = 1 0 Vvs. Ambient Temperature-12-135mA3mA5tstdtftrTa= 25 CIc= 2mAV = 10VL7mAForward current I (mA)Load resistance R (k )Frequency f (kHz)Ambient temperature Ta ( C)Ambient temperature Ta ( C)Collector-emitter saturation voltageV (sat) (V)Response time ( s)Voltage gain Av (dB)Collector-emitter saturation voltageV (sat) 1 25 10 20 10 20 50 100 200 50050-5-10-15-2000123456751015ooooo-55 -25 0 255075100-25204060100125100-551010101010 101010555555 ResistanceInputROutputInputRDOutputLVc ctdtrtfts90%10%OutputRDLRVc cTest Circuit for Response TimeTest Circuit for Frequency ResponseRL=10k1k100 Collector dark current ICEO (A) Part No.
8 : LTV-4N35 / 4N37 ( M, S, S-TA, S-TA1 ) Page : 9of9 BNS-OD-C131/A4
