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LT8650S Dual Channel 4A, 42V, Synchronous Step-Down …

LT8650S . Dual Channel 4A, 42V, Synchronous Step-Down Silent Switcher 2. with A quiescent current FEATURES DESCRIPTION. n Silent Switcher 2 Architecture: The LT 8650S is a dual Step-Down regulator that delivers n Ultralow EMI on Any PCB up to 4A of continuous current from both channels and n Eliminates PCB Layout Sensitivity supports loads up to 6A from each Channel . The LT8650S . n Internal Bypass Capacitors Reduce Radiated EMI features the second generation Silent Switcher architecture n Optional Spread Spectrum Modulation to minimize EMI emissions while delivering high efficiency n 4A DC from Each Channel Simultaneously at high switching frequencies. This includes integration of n Up to 6A on Either Channel bypass capacitors to optimize high frequency current loops n Ultralow quiescent current Burst Mode Operation: and make it easy to achieve advertised EMI performance n A I Regulating 12V to 5V.

cies, leading to a small overall solution size. Peak current mode control with a 40ns minimum on-time allows high step down ratios at high switching frequencies. Burst Mode operation features a 6.2μA quiescent current resulting in high efficiency at low output currents, forced continuous mode allows fixed switching frequency opera -

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Transcription of LT8650S Dual Channel 4A, 42V, Synchronous Step-Down …

1 LT8650S . Dual Channel 4A, 42V, Synchronous Step-Down Silent Switcher 2. with A quiescent current FEATURES DESCRIPTION. n Silent Switcher 2 Architecture: The LT 8650S is a dual Step-Down regulator that delivers n Ultralow EMI on Any PCB up to 4A of continuous current from both channels and n Eliminates PCB Layout Sensitivity supports loads up to 6A from each Channel . The LT8650S . n Internal Bypass Capacitors Reduce Radiated EMI features the second generation Silent Switcher architecture n Optional Spread Spectrum Modulation to minimize EMI emissions while delivering high efficiency n 4A DC from Each Channel Simultaneously at high switching frequencies. This includes integration of n Up to 6A on Either Channel bypass capacitors to optimize high frequency current loops n Ultralow quiescent current Burst Mode Operation: and make it easy to achieve advertised EMI performance n A I Regulating 12V to 5V.

2 Q IN OUT1 and by eliminating layout sensitivity. n Output Ripple <10mV. P-P The fast, clean, low overshoot, switching edges enable n Optional External VC Pin: Fast Transient Response high efficiency operation even at high switching frequen- and current Sharing (Extra 50 A IQ/ Channel ) cies, leading to a small overall solution size. Peak current n Forced Continuous Mode mode control with a 40ns minimum on-time allows high n High Efficiency at High Frequency step down ratios at high switching frequencies. n Efficiency at 2A, 5 VOUT from 12 VIN at 2 MHz n Efficiency at 4A, 5 VOUT from 12 VIN at 2 MHz Burst Mode operation features a A quiescent current n Fast Minimum Switch On-Time: 40ns resulting in high efficiency at low output currents, forced n Wide Input Voltage Range: to 42V continuous mode allows fixed switching frequency opera- n Adjustable and Synchronizable: 300kHz to 3 MHz tion over the entire output load range, and spread spectrum n Small 4mm 6mm 32-Pin LQFN Package operation can further reduce EMI emissions.

3 External VC. n AEC-Q100 Qualified for Automotive Applications pins allow optimal loop compensation for fast transient response. The VC pins can also be used for current sharing APPLICATIONS and the CLKOUT pin enables synchronizing two LT8650S . chips to generate a 4-phase, 16A supply. n General Purpose Step-Down All registered trademarks and trademarks are the property of their respective owners. Protected n Automotive and Industrial Supplies by patents, including 8823345. TYPICAL APPLICATION. 5V/4A, 2 MHz Step-Down Converter Efficiency VIN1 VIN2 100. VIN1 VIN2. TO 42V TO 42V 95. F EN/UV1 EN/UV2 F. 90. VOUT1 H H VOUT2. 5V SW1 SW2 85. 4A 47 F 47 F 4A 80. EFFICIENCY (%). 1M 1M. 2 2 75. FB1 FB2. LT8650S 70. 191k VCC VC1 VC2 VCC 316k 65. SS1 SS2 60. 10nF 10nF 55. 50. BIAS VIN1 = VIN2 = 12V CH1 5V. 45 f SW = 2 MHz RT VCC GND SYNC CH2 40. 0 1 2 3 4 5 6. 15k 1 F.

4 8650S TA01a LOAD current (A). 8650s TA01b fSW = 2 MHz Rev. B. Document Feedback For more information 1. LT8650S . ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION. (Note 1). TOP VIEW. VIN1, VIN2, EN/UV1, EN/UV2, PG1, VC2. SS2. SS1. VC1. FB2. FB1. FB1, FB2, SS1, SS2 ..4V 32 31 30 29 28 27. VC1, RT 1 26 BIAS. GND 2 33 34 25 VCC. Operating Junction Temperature Range (Note 2) GND GND. 24 BST1. 40 to 125 C VIN1 4 23 SW1. 40 to 125 C VIN1 5 22 SW1. 35 36. 40 to 150 C GND GND. 40 to 150 C. VIN2 7 20 SW2. Storage Temperature 65 to 150 C. VIN2 8 19 SW2. Maximum Reflow (Package Body) 37 38. GND GND. 260 C 18 BST2. GND 10 17 CLKOUT. 11 12 13 14 15 16. EN1. EN2. TEMP. PG1. PG2. SYNC. LQFN PACKAGE. 32-LEAD (6mm 4mm ). TJMAX = 125 C, JA = 23 C/W. EXPOSED PAD (PINS 33, 34, 35, 36, 37, 38) ARE GND, MUST BE SOLDERED TO PCB. ORDER INFORMATION. PART MARKING PACKAGE* MSL TEMPERATURE RANGE.

5 PART NUMBER PAD OR BALL FINISH DEVICE FINISH CODE TYPE RATING (SEE NOTE 2). LT8650 SEV#PBF 40 C to 125 C. LQFN (Laminate Package LT8650 SIV#PBF Au (RoHS) 8650SV e4 3 40 C to 125 C. with QFN Footprint). LT8650 SHV#PBF 40 C to 150 C. AUTOMOTIVE PRODUCTS**. LT8650 SEV#WPBF 40 C to 125 C. LT8650 SIV#WPBF LQFN (Laminate Package 40 C to 125 C. Au (RoHS) 8650SV e4 3. LT8650 SJV#WPBF with QFN Footprint) 40 C to 150 C. LT8650 SHV#WPBF 40 C to 150 C. Device temperature grade is indicated by a label on the shipping container. Recommended PCB Assembly and Manufacturing Procedures. Pad or ball finish code is per IPC/JEDEC J-STD-609. Package and Tray Drawings *The LT8650S package has the same dimensions as a standard 6mm 4mm QFN package **Versions of this part are available with controlled manufacturing to support the quality and reliability requirements of automotive applications.

6 These models are designated with a #W suffix. Only the automotive grade products shown are available for use in automotive applications. Contact your local Analog Devices account representative for specific product ordering information and to obtain the specific Automotive Reliability reports for these models. Rev. B. 2 For more information LT8650S . ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25 C. PARAMETER CONDITIONS MIN TYP MAX UNITS. Minimum Input Voltage l 3 V. VIN1 quiescent current in Shutdown VEN/UV1 = VEN/UV2 = 0V, VSYNC = 0V 4 A. l 10 A. VIN1 + VCC quiescent current in VEN/UV1 = VEN/UV2 = 2V, VFB1 = VFB2 > , VVC1 = VVC2 = VCC, 8 A. Sleep with Internal Compensation VSYNC = 0V l 20 A. VIN1 + VCC quiescent current in VEN/UV1 = VEN/UV2 = 2V, VFB1 = VFB2 > , VVC1 = VVC2 = Float, 90 120 A.

7 Sleep with External Compensation VSYNC = 0V l 140 A. VIN1 + VCC quiescent current when VEN/UV1 = VEN/UV2 = 2V, VFB1 = VFB2 > , VVC1 = VVC2 = VCC, VSYNC = l 5 7 mA. Active VIN current in Regulation VIN = 12V, VOUT = , Output Load = 100 A, VVC1 = VVC2 = VCC, VSYNC = 0V 45 75 A. VIN = 12V, VOUT = , Output Load = 1mA, VVC1 = VVC2 = VCC, VSYNC = 0V 350 550 A. Feedback Reference Voltage V. l V. Feedback Voltage Line Regulation VIN = to 36V %/V. Feedback Pin Input current VFB = 20 20 nA. Minimum On-Time ILOAD = 3A, SYNC 2V l 40 60 ns Oscillator Frequency RT = 133k l 270 300 330 kHz RT = l MHz RT = 15k l MHz Top Power NMOS current Limit 10 12 14 A. Bottom Power NMOS current Limit A. SW Leakage current VIN = 42V, VSW = 0V,42V 2 2 A. EN/UV Pin Threshold EN/UV Falling l V. EN/UV Pin Hysteresis 30 mV. EN/UV Pin current VEN/UV = 2V 20 20 nA. PG Upper Threshold Offset from VFB VFB Falling l 9 %.

8 PG Lower Threshold Offset from VFB VFB Rising l %. PG Hysteresis %. PG Leakage VPG = 12V 40 40 nA. PG Pull-Down Resistance VPG = l 600 1200 Ohm SYNC Threshold SYNC DC and Clock Low Level Voltage V. SYNC Clock High Level Voltage V. SYNC DC High Level Voltage V. SYNC Pin current VSYNC = 6V 120 A. SS Source current l A. SS Pull-Down Resistance Fault Condition, SS = 200 . Error Amplifier Transconductance VC = mS. VC Source current VFB = , VVC = 185 A. VC Sink current VFB = , VVC = 185 A. VC Pin to Switch current Gain A/V. TEMP Output Voltage ITEMP = 0 A, Temperature = 25 C 250 mV. ITEMP = 0 A, Temperature = 125 C 1200 mV. Rev. B. For more information 3. LT8650S . ELECTRICAL CHARACTERISTICS. Note 1: Stresses beyond those listed under Absolute Maximum Ratings operating junction temperature range. Operating lifetime is derated at may cause permanent damage to the device.

9 Exposure to any Absolute junction temperatures greater than 125 C. The junction temperature (TJ, Maximum Rating condition for extended periods may affect device in C) is calculated from the ambient temperature (TA in C) and power reliability and lifetime. dissipation (PD, in Watts) according to the formula: Note 2: The LT8650SE is guaranteed to meet performance specifications TJ = TA + (PD JA) where JA (in C/W) is the package thermal from 0 C to 125 C junction temperature. Specifications over the 40 C impedance. to 125 C operating junction temperature range are assured by design, Note 3: This IC includes overtemperature protection that is intended to characterization, and correlation with statistical process controls. The protect the device during overload conditions. Junction temperature will LT8650SI is guaranteed over the full 40 C to 125 C operating junction exceed 150 C when overtemperature protection is active.

10 Continuous temperature range. High junction temperatures degrade operating operation above the specified maximum operating junction temperature lifetimes. The LT8650SJ is guaranteed over the full 40 C to 150 C will reduce lifetime TYPICAL PERFORMANCE CHARACTERISTICS. 5 VOUT Efficiency 5 VOUT Efficiency 100 100. fSW = 2 MHz EFFICIENCY fSW = 2 MHz 95 FCM 90. 90 80. 85 BURST. 70. 80 POWER LOSS (W). EFFICIENCY (%). EFFICIENCY (%). 75 60. 70 12V 50. 24V FCM. 65 40. 36V. 60 12V. 30. 55 24V. POWER LOSS 20 36V. 50 45 10. L = XFL5030, H L = XFL5030, H. 40 0 0. 0 1 2 3 4 5 6 1 10 100 1k 10k LOAD current (A) LOAD current (mA). 8650S G01 8650S G02. Efficiency Efficiency 100 100. fSW = 2 MHz EFFICIENCY fSW = 2 MHz 95 90. FCM. 90 80. 85 BURST. 70. 80 POWER LOSS (W). EFFICIENCY (%). EFFICIENCY (%). 75 60. 70 12V 50. 24V FCM. 65 36V 40. 60 12V. 30. 55 24V. POWER LOSS 20 36V.


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