1 MC74 VHC1G09. 2-Input AND gate with open Drain Output The MC74 VHC1G09 is an advanced high speed cmos 2 input AND. gate with open drain output fabricated with silicon gate cmos . technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining cmos low power dissipation. The internal circuit is composed of three stages, including an open drain output which provides the capability to set output switching level. MARKING. This allows the MC74 VHC1G09 to be used to interface 5 V circuits to DIAGRAMS.
2 Circuits of any voltage between VCC and 7 V using an external resistor 5. and power supply. The MC74 VHC1G09 input structure provides protection when VX M G. M. voltages up to 7 V are applied, regardless of the supply voltage. SC 88A / SOT 353 / SC 70 G. DF SUFFIX. 1. Features CASE 419A. High Speed: tPD = ns (Typ) at VCC = 5 V. Low Internal Power Dissipation: ICC = 1 mA (Max) at TA = 25 C. Power Down Protection Provided on Inputs VX M G. Pin and Function Compatible with Other Standard Logic Families TSOP 5 / SOT 23 / SC 59 G.
3 Chip Complexity: FETs = 62; Equivalent Gates = 16 DT SUFFIX. CASE 483. NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q100. VX = Device Code Qualified and PPAP Capable M = Date Code*. These Devices are Pb Free and are RoHS Compliant G = Pb Free Package (Note: Microdot may be in either location). *Date Code orientation and/or position may vary depending upon manufacturing location. IN B 1 5 VCC. PIN ASSIGNMENT. OVT 1 IN B. 2 IN A. IN A 2. 3 GND. 4 OUT Y.
4 5 VCC. GND 3 4 OUT Y. FUNCTION TABLE. Inputs Output Figure 1. Pinout (Top View). A B Y. L L L. IN A & L H L. OUT Y H L L. IN B. H H Z. Figure 2. Logic Symbol ORDERING INFORMATION. See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: October, 2013 Rev. 18 MC74 VHC1G09/D. MC74 VHC1G09. MAXIMUM RATINGS. Symbol Characteristics Value Unit VCC DC Supply Voltage to + V. VIN DC input Voltage to + V.
5 VOUT DC Output Voltage to V. IIK input Diode Current 20 mA. IOK Output Diode Current +20 mA. IOUT DC Output Current, per Pin +25 mA. ICC DC Supply Current, VCC and GND +50 mA. PD Power dissipation in still air SC 88A, TSOP 5 200 mW. qJA Thermal resistance SC 88A, TSOP 5 333 C/W. TL Lead temperature, 1 mm from case for 10 s 260 C. TJ Junction temperature under bias +150 C. Tstg Storage temperature 65 to +150 C. MSL Moisture Sensitivity Level 1. FR Flammability Rating Oxygen Index: 28 to 34 UL 94 V 0 @ in VESD ESD Withstand Voltage Human Body Model (Note 1) > 2000 V.
6 Machine Model (Note 2) > 200. Charged Device Model (Note 3) N/A. ILatchup Latchup Performance Above VCC and Below GND at 125 C (Note 4) 500 mA. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD22 A114 A. 2. Tested to EIA/JESD22 A115 A. 3. Tested to JESD22 C101 A.
7 4. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS. Symbol Characteristics Min Max Unit VCC DC Supply Voltage V. VIN DC input Voltage V. VOUT DC Output Voltage V. TA Operating Temperature Range 55 +125 C. tr, tf input Rise and Fall Time VCC = V V 0 100 ns/V. VCC = V V 0 20. Device Junction Temperature versus Time to Bond Failures Junction NORMALIZED FAILURE RATE. FAILURE RATE OF PLASTIC = CERAMIC. Temperature C Time, Hours Time, Years UNTIL INTERMETALLICS OCCUR. 80 1,032,200 TJ = 130 C. TJ = 120 C. TJ = 110 C.
8 TJ = 100 C. TJ = 80 C. TJ = 90 C. 90 419,300 100 178,700 110 79,600 1. 120 37,000 130 17,800 1 10 100 1000. TIME, YEARS. 140 8,900 Figure 3. Failure Rate vs. Time Junction Temperature 2. MC74 VHC1G09. DC ELECTRICAL CHARACTERISTICS. TA = 25 C TA 85 C 55 TA 125 C. VCC. Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit VIH Minimum High Level V. input Voltage VIL Maximum Low Level V. input Voltage VOL Maximum Low Level VIN = VIH or VIL V. Output Voltage IOL = 50 mA VIN = VIH or VIL VIN = VIH or VIL V.
9 IOL = 4 mA IOL = 8 mA IIN Maximum input VIN = V or GND 0 to mA. Leakage Current ICC Maximum Quiescent VIN = VCC or GND 20 40 mA. Supply Current IOFF Power Off Output VOUT = V 0 5 mA.. Leakage Current VIN = V.. AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, input tr = tf = ns .. TA = 25 C TA 85 C 55 TA 125 C.. Symbol Parameter Test Conditions Min Typ Max Min Max Min Max Unit . tPZL.. Maximum Output . VCC = V CL = 15 pF.. Enable Time, RL = RI = 500 W CL = 50 pF. ns . input A or B to Y. VCC = V CL = 15 pF . RL = RI = 500 W CL = 50 pF.
10 TPLZ Maximum Output VCC = V CL = 50 pF ns Disable Time RL = RI = 500 W.. VCC = V CL = 50 pF . RL = RI = 500 W.. CIN Maximum input Ca- 10 10 10 pF.. pacitance Typical @ 25 C, VCC = V. CPD Power Dissipation Capacitance (Note 5) 18 pF. 5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.