MICROPOSIT S1800 SERIES - AMOLF

1 MICROPOSIT S1800 SERIESPHOTO RESISTSMICROPOSIT S1800 SERIES PHOTO RESISTS are positivephotoresist systems engineered to satisfy the microelectronicsindustry's requirements for advanced IC device fabrication. Thesystem has been engineered using a toxicologically safer alter-native casting solvent to the ethylene glycol derived etheracetates. The dyed photoresist versions are recommended tominimize notching and maintain linewidth control when process-ing on highly reflective S1800 SERIES PHOTO RESISTSFEATURE:Product Assurance Lot-to-lot consistency through state-of-the-art physical,chemical and functional testing Filtered to m absoluteCoating Properties 1 Cellosolve Acetate and xylene free Striation-free coatings Excellent adhesion Excellent coating uniformity A variety of standard viscosities are available forsingle-layer processingExposure Properties Optimized for G-Line exposure Effective for broad-band exposure Reflective notch and linewidth control using dyed versionsDevelop Properties Optimized for use with the MICROPOSIT MF -319 Metal-lon-Free DEVELOPER family Compatible with Metal-lon-Bearing MICROPOSITDEVELOPERSR emoval Property Residue-free photoresist removal using standardMICROPOSIT REMOVERSHigh Resolution Process Parameters(Refer to Figure 1)Substrate.

2 PolysiliconPhotoresist: MICROPOSIT S1813 PHOTO RESISTCoat:12,300 Softbake:115 C/60 sec. HotplateExposure:Nikon 1505 G6E, G-Line ( NA), 150 mJ/cm2 Develop: MICROPOSIT MF -321 DEVELOPER15 + 50 sec. Double Spray Puddle (DSP) @ 21 C1 Registered trademark of Union Carbide m m m m m Lines/SpacesMasking Linearity SEMSF igure S18001093 Page 2 Substrate PreparationMICROPOSIT S1800 SERIES PHOTO RESISTS work well with the hexamethyldisilazanebased MICROPOSIT PRIMERS. ConcentratedMICROPOSIT PRIMER is recommended whenvacuum vapor priming. Diluted PRIMER is recom-mended for liquid phase priming S1800 SERIES PHOTO RESISTS provide uniform defect-free coatings over a widerange of film thicknesses.

3 The film thickness versusspin speed plots displayed in Figures 1 and 2 providethe information required to properly selecta MICROPOSIT S1800 PHOTO RESIST version tomeet process dependent thickness coating uniformity is typically attained be-tween the spin speeds of 3500 rpm and 5500 S1800 PHOTO RESIST DYED SERIESF igure 2. Spin Speed CurvesMICROPOSIT S1813 PHOTO RESISTF igure 3. Dispersion CurveThe dispersion curve and Cauchy equation displayedin Figure 3 describe how the refractive index of thephotoresist film varies as a function of the wavelengthof light incident upon the film. This information isrequired to program ellipsometric and other opticallybased photoresist measuring S1800 PHOTO RESIST UNDYED SERIESF igure 1.

4 Spin Speed CurvesProcess Parameters(Refer to Figure 3)SubstrateSiliconCoat13,675 Softbake115 C/60 seconds HotplateMeasurePrometrix SM300 Process Parameters(Refer to Figures 1 and 2) 81 Softbake115 C/60 seconds HotplateMeasureNanometrics 210 Instructions for UseThe following instructions cover the use ofMICROPOSIT S1800 SERIES PHOTO RESISTS forall levels of microelectronic device fabrication. Exactprocess parameters are application and film thickness selection is critical in order toreduce photospeed and critical dimension interference curves displayed in Figure 4 illus-trate the photospeed variability as a function of filmthickness. Dyed versions suppress the interferenceeffects which are more pronounced when exposingwith monochromatic light sources and when usingreflective Parameters(Refer to Figure 4)SubstrateSiliconCoatGCA 1006 2 WAFERTRAC Softbake115 C/60 seconds HotplateExposeGCA 8500 G-Line ( NA)DeveloperMF-321 /10 + 30 DSP @ 21 CMICROPOSIT S1800 SERIES PHOTO RESISTScan be exposed with light sources in the spectraloutput range of 350 nm -450 nm.

5 The exposureproperties have been optimized for use at 436 5 and 6 show the absorbance spectrums forMICROPOSIT S1813 and S1813 J2 Parameters(Refer to Figures 5 and 6)SubstrateQuartzCoat12,300 Softbake115 C/60 seconds HotplateExposeOriel Scanning WedgeMeasureHewlett Packard 8450 ASpectrophotometerTable 1 summarizes the Dill parameters for eachMICROPOSIT S1800 SERIES PHOTO RESIST ver-sion. Dill parameters are used in optical exposuremodels such as SAMPLE and S1800 SERIES PHOTO RESISTST able 1. Dill Parameters365 nm436 nmPhotoresistABAB( m-1)( m-1)( m-1)( m-1) Registered Trademark of GCA, a unit of General SignalMICROPOSIT S1813 and S1813 J2 PHOTO RESISTSF igure 4. Interference CurvesMICROPOSIT S1813 PHOTO RESISTF igure 5.

6 Absorbance SpectrumMICROPOSIT S1813 J2 PHOTO RESISTF igure 6. Absorbance SpectrumPage 3 Figure 7 displays a contrast curve for MICROPOSITS1813 PHOTO RESIST developed withMICROPOSIT MF -321 DEVELOPER. In general,high contrast values correlate to higher angle Parameters(Refer to Figure 7)SubstrateSiliconCoat12,300 Softbake115 C/60 seconds HotplateExposeGCA 8500 G-Line ( NA)DevelopMF-321 /10 + 30 DSP @ 21 CDEVELOPMICROPOSIT S1800 SERIES PHOTO RESISTS arecompatible with both Metal-lon-Free (MIF) and Metal-Ion-Bearing (MIB) developers. A photoresist anddeveloper system is dependent upon specific applica-tion requirements. Contact your local Shipley Tech-nical Sales Representative for additional product 8 thru 10 illustrate the lithographic function-ality of MICROPOSIT S1813 PHOTO RESIST usingprocess parameters designed to maximize resolutionwhile maintaining excellent exposure and focus lati-tude (refer to SEM photographs in Figure 1).

7 Thefunctional lithographic responses are summarized inTable Parameters(Refer to Figures 8 thru 10)SubstrateSiliconCoat12,300 Softbake115 C/60 seconds HotplateExposeNikon 1505 G6E G-Line ( NA)DevelopMF-321 /15 + 50 DSP @ 21 CMICROPOSIT S1813 PHOTO RESIST with MICROPOSIT MF-321 DEVELOPERT able 2. Functional Lithographic Summary data Sizing Energy150 mJ/cm2 ( E0) m Masking Linearity ( 10% CD) m m L/S Exposure Latitude ( 10% CD)65%45% Focus Latitude ( 10% CD) m 85 Wall AnglePage 4 MICROPOSIT S1813 PHOTO RESISTF igure 7. Contrast CurveMICROPOSIT S1813 PHOTO RESISTF igure 8. Masking Linearity PlotMICROPOSIT S1813 PHOTO RESISTF igure 9. Exposure Latitude PlotoNominal m L/Sy = + ^2 + ^3 R^2 = Nominal m L/Sy = + ^2 ^3 R^2 = S1813 PHOTO RESISTF igure 10.

8 Focus Latitude PlotHandling PrecautionsWARNING: MICROPOSIT S1800 SERIES PHOTORESISTS are combustible mixtures containing pro-pylene glycol monomethyl ether acetate. Contactwith eyes, skin and mucous membranes causes irri-tation. Handle with care. Do not get in eyes, on skinor on clothing. Avoid breathing vapors or mists. Usewith adequate ventilation. Wash thoroughly chemical goggles, chemical gloves and suitableprotective clothing when handling MICROPOSITS1800 SERIES PHOTO case of eye or skin contact, flush affected areas withplenty of water for at least 15 minutes. Then contacta physician at product Material safety data sheet and Health AdvantagesThe solvent used in MICROPOSIT S1800 SERIESPHOTO RESISTS is propylene glycol monomethylether acetate.

9 Toxicological studies reported thatpropylene glycol derivatives contained inMICROPOSIT S1800 SERIES PHOTO RESISTS donot demonstrate the adverse blood effects and repro-ductive effects that ethylene glycol derived etheracetates demonstrate (NIOSH Current IntelligenceBulletin 9 -5/2/83).StorageStore MICROPOSIT S1800 PHOTO RESISTS only inupright, original containers in a dry area at 50 -70 F(10 -21 C). Store away from light, oxidants, heat, andsources of ignition. Do not store in sunlight. Keepcontainer sealed when not in S1800 SERIES PHOTO RESISTS arecompatible with most commercially available photo-resist processing equipment. Compatible materialsinclude stainless steel, glass, ceramic, unfilled polypro-pylene, high density polyethylene, polytetrafluoroeth-ylene, or equivalent LiteraturePlease contact your Shipley Technical Sales Repre-sentative for information on the use and performanceof Shipley 5 Worldwide OperationsShipley Company455 Forest StreetMarlborough, MA 01752-3001 TEL: (508) 481-7950 FAX: (508) 485-9113 European OperationsShipley Europe WayCoventry CV3 2 RQUnited KingdomTELEX:851311316 TEL: 441 203 457 203 Far East OperationsShipley Far East , TakashimadairaItabashi-ku, Tokyo 175 JapanTELEX: 781 28875 TEL.

10 81 35 920 5300 Domestic Sales OfficesMarlborough, MA(508) 481-7950(800) 832-6200 Carrollton, TX(214) 446-2400(800) 527-3730 Tempe, AZ(602) 894-5499(800) 262-6377 Santa Clara, CA(408) 988-3600(800) 423-9937 International Sales OfficesEvry, France33 1 60 86 81 82 Milano, Italy39 2 938 1586 Geldrop, The Netherlands31 40 853 335 Norrkoeping, Sweden46 11 108170 Jona, Switzerland41 55 284 646/647 Esslingen, Germany49 711-931 32-0 Kowloon, Hong Kong852 6 940 661 Singapore65-862-1888 International DistributorsAustralia, China, India, Israel, Mexico, Singapore, South Africa, South Korea, Spain, Taiwan, Western LocationsMarlborough, MA; Coventry, United Kingdom; Sasagami, For Industrial Use Only This information is based on our experience and is, to the best of our knowledge, true and accurate.