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MMBT3904 NPN switching transistor - Nexperia

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia , as shown below. Instead of , or , use Instead of or use (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - NXP (year). All rights reserved or Koninklijke Philips Electronics (year).

DATA SHEET Product data sheet Supersedes data of 2002 Oct 04 2004 Feb 03 DISCRETE SEMICONDUCTORS MMBT3904 NPN switching transistor

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Transcription of MMBT3904 NPN switching transistor - Nexperia

1 Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia , as shown below. Instead of , or , use Instead of or use (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - NXP (year). All rights reserved or Koninklijke Philips Electronics (year).

2 All rights reserved Should be replaced with: - Nexperia (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via Thank you for your cooperation and understanding, Kind regards, Team Nexperia DATA SHEETP roduct data sheet Supersedes data of 2002 Oct 042004 Feb 03 DISCRETE SEMICONDUCTORS MMBT3904 NPN switching transistordbook, halfpageM3D0882004 Feb 032 NXP SemiconductorsProduct data sheetNPN switching transistorMMBT3904 FEATURES Collector current capability IC = 200 mA Collector-emitter voltage VCEO = 40 General switching and switching transistor in a SOT23 plastic package. PNP complement: = p: Made in Hong Kong.)

3 = t: Made in Malaysia. = W: Made in NUMBERMARKING CODE(1)MMBT39047A PINNINGPINDESCRIPTION1base2emitter3colle ctorhandbook, halfpage213 MAM255 Top Simplified outline (SOT23) and REFERENCE voltage40 VICcollector current (DC)200mAORDERING INFORMATIONTYPE NUMBERPACKAGENAMEDESCRIPTIONVERSIONMMBT3 904 plastic surface mounted package; 3 leadsSOT232004 Feb 033 NXP SemiconductorsProduct data sheetNPN switching transistorMMBT3904 LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).Note1. transistor mounted on an FR4 printed-circuit CHARACTERISTICSNote1. transistor mounted on an FR4 printed-circuit voltageopen emitter 60 VVCEO collector-emitter voltageopen base 40 VVEBO emitter-base voltageopen collector 6 VICcollector current (DC) 200mAICM peak collector current 200mAIBM peak base current 100mAPtottotal power dissipationTamb 25 C; note 1 250mWTstgstorage temperature 65+150 CTjjunction temperature 150 CTamboperating ambient temperature 65+150 CSYMBOLPARAMETERCONDITIONSVALUEUNITRth(j -a)thermal resistance from junction to ambientnote 1500K/W2004 Feb 034 NXP SemiconductorsProduct data sheetNPN switching transistorMMBT3904 CHARACTERISTICSTamb = 25 C unless otherwise Pulse test: tp 300 s; cut-off currentIE = 0.

4 VCB = 30 V 50nAIEBO emitter cut-off currentIC = 0; VEB = 6 V 50nAhFEDC current gainVCE = 1 V; see ; note 1IC = mA60 IC = 1 mA80 IC = 10 mA100300IC = 50 mA60 IC = 100 mA30 VCEsatcollector-emitter saturation voltageIC = 10 mA; IB = 1 mA 200mVIC = 50 mA; IB = 5 mA 300mVVBE satbase-emitter saturation voltageIC = 10 mA; IB = 1 mA650850mVIC = 50 mA; IB = 5 mA 950mVCccollector capacitanceIE = Ie = 0; VCB = 5 V; f = 1 MHz 4pFCeemitter capacitanceIC = Ic = 0; VBE = 500 mV; f = 1 MHz 8pFfTtransition frequencyIC = 10 mA; VCE = 20 V; f = 100 MHz300 MHzFnoise figureIC = 100 A; VCE = 5 V; RS = 1 k ; f = 10 Hz to kHz 5dBSwitching times (between 10% and 90% levels); see timeICon = 10 mA; IBon = 1 mA; IBoff = 1 mA 35nstrrise time 35nstsstorage time 200nstffall time 50ns2004 Feb 035 NXP SemiconductorsProduct data sheetNPN switching transistorMMBT3904handbook, halfpageMGU821hFE1000200400300500IC (mA)10 1110102103(1)(2)(3) DC current gain; typical = 1 V.

5 (1) Tamb = 150 C.(2) Tamb = 25 C.(3) Tamb = 55 current as a function of collector-emitter voltage.(1) IB = 5 mA.(2) IB = mA.(3) IB = 4 mA.(4) IB = mA.(5) IB = 3 mA.(6) IB = mA.(7) IB = 2 mA.(8) IB = mA.(9) IB = 1 mA.(10) IB = , halfpageIC(mA)062810 VCE (V)4025015020050100 MGU822(1)(2)(3)(4)(5)(6)(7)(8)(9)(10)Tam b = 25 , halfpageMGU823 VBE(mV)40020060010008001200IC (mA)10 1110102103(1)(2)(3) voltage as a function of collector = 1 V.(1) Tamb = 55 C.(2) Tamb = 25 C.(3) Tamb = 150 , halfpageMGU824 VBEsat(mV)60010004002008001200IC (mA)10 1110102103(1)(2)(3) saturation voltage as a function of collector = 10.(1) Tamb = 55 C.(2) Tamb = 25 C.(3) Tamb = 150 Feb 036 NXP SemiconductorsProduct data sheetNPN switching transistorMMBT3904handbook, halfpageMGU825103 VCEsat(mV)10210IC (mA)10 1110102103(1)(2)(3) saturation voltage as a function of collector = 10.

6 (1) Tamb = 150 C.(2) Tamb = 25 C.(3) Tamb = 55 , full pagewidthRCR2R1 DUTMLB826 VoRB(probe)450 (probe)450 Test circuit for switching = 5 V; T = 500 s; tp = 10 s; tr = tf 3 = 56 ; R2 = k ; RB = k ; RC = 270 .VBB = V; VCC = 3 : input impedance Zi = 50 .2004 Feb 037 NXP SemiconductorsProduct data sheetNPN switching transistorMMBT3904 PACKAGE e1 HELpQwv REFERENCESOUTLINEVERSIONEUROPEANPROJECTI ONISSUE DATE04-11-0406-03-16 IEC JEDEC (mm are the original dimensions) SOT23TO-236 ABbpDe1eAA1 LpQdetail XHEEwMvMABAB012 surface-mounted package; 3 leadsSOT232004 Feb 038 NXP SemiconductorsProduct data sheetNPN switching transistorMMBT3904 DATA SHEET STATUSN otes1. Please consult the most recently issued document before initiating or completing a The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices.

7 The latest product status information is available on the Internet at URL DOCUMENTSTATUS(1)PRODUCT STATUS(2)DEFINITIONO bjective data sheetDevelopmentThis document contains data from the objective specification for product development. Preliminary data sheetQualificationThis document contains data from the preliminary specification. Product data sheetProductionThis document contains the product specification. DISCLAIMERSG eneral Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice.

8 This document supersedes and replaces all information supplied prior to the publication for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own Applications that are described herein for any of these products are for illustrative purposes only.

9 NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors.

10 In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.


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