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MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G …

MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series Surface Mount Ultrafast Power Rectifiers MURS105T3G, MURS110T3G, MURS115T3G, MURS120T3G , MURS140T3G, MURS160T3G, ULTRAFAST RECTIFIERS. SURS8105T3G, SURS8110T3G, SURS8115T3G, AMPERE, 50 600 VOLTS. SURS8120T3G , SURS8140T3G, SURS8160T3G, NRVUS110VT3G, NRVUS120VT3G , NRVUS160VT3G. Ideally suited for high voltage, high frequency rectification, or as SMB. free wheeling and protection diodes in surface mount applications CASE 403A. where compact size and weight are critical to the system. MARKING DIAGRAM. Features Small Compact Surface Mountable Package with J Bend Leads AYWW. Rectangular Package for Automated Handling U1x G. High Temperature Glass Passivated Junction G. Low Forward Voltage Drop ( to V Max @ A, TJ = 150 C). NRVUS and SURS8 Prefixes for Automotive and Other Applications A =. Assembly Location*. Y =. Year Requiring Unique Site and Control Change Requirements;. WW =. Work Week AEC Q101 Qualified and PPAP Capable U1 =.

• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ... SQUARE WAVE (CAPACITANCELOAD) IPK IAV 20 10 5.0 i. MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series www.onsemi.com 4 MURS140T3G, MURS160T3G, SURS8140T3G, SURS8160T3G, NRVUS160VT3G

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Transcription of MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G …

1 MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series Surface Mount Ultrafast Power Rectifiers MURS105T3G, MURS110T3G, MURS115T3G, MURS120T3G , MURS140T3G, MURS160T3G, ULTRAFAST RECTIFIERS. SURS8105T3G, SURS8110T3G, SURS8115T3G, AMPERE, 50 600 VOLTS. SURS8120T3G , SURS8140T3G, SURS8160T3G, NRVUS110VT3G, NRVUS120VT3G , NRVUS160VT3G. Ideally suited for high voltage, high frequency rectification, or as SMB. free wheeling and protection diodes in surface mount applications CASE 403A. where compact size and weight are critical to the system. MARKING DIAGRAM. Features Small Compact Surface Mountable Package with J Bend Leads AYWW. Rectangular Package for Automated Handling U1x G. High Temperature Glass Passivated Junction G. Low Forward Voltage Drop ( to V Max @ A, TJ = 150 C). NRVUS and SURS8 Prefixes for Automotive and Other Applications A =. Assembly Location*. Y =. Year Requiring Unique Site and Control Change Requirements;. WW =. Work Week AEC Q101 Qualified and PPAP Capable U1 =.

2 Device Code These Devices are Pb Free and are RoHS Compliant x = A, B, C, D, G, or J. G = Pb Free Package Mechanical Characteristics: (Note: Microdot may be in either location). Case: Epoxy, Molded * The Assembly Location code (A) is front side Weight: 95 mg (Approximately) optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter Finish: All External Surfaces Corrosion Resistant and Terminal pin), the front side assembly code may be blank. Leads are Readily Solderable Lead and Mounting Surface Temperature for soldering Purposes: ORDERING INFORMATION. 260 C Max. for 10 Seconds See detailed ordering and shipping information in the table on Polarity: Polarity Band Indicates Cathode Lead page 2 of this data sheet. ESD Rating: Human Body Model = 3B (> 8 kV) DEVICE MARKING INFORMATION. Machine Model = C (> 400 V) See general marking information in the device marking table on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: April, 2019 Rev.

3 16 MURS120T3/D. MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series MAXIMUM RATINGS. MURS/SURS8/NRVUS. Rating Symbol 105T3 110T3 115T3 120T3 140T3 160T3 Unit Peak Repetitive Reverse Voltage VRRM 50 100 150 200 400 600 V. Working Peak Reverse Voltage VRWM. DC Blocking Voltage VR. Average Rectified Forward Current IF(AV) @ TL = 155 C @ TL = 150 C A. @ TL = 145 C @ TL = 125 C. Non Repetitive Peak Surge Current, (Surge applied IFSM 40 35 A. at rated load conditions halfwave, single phase, 60 Hz). Operating Junction Temperature TJ *65 to +175 C. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS. MURS/SURS8/NRVUS. Rating Symbol 105T3 110T3 115T3 120T3 140T3 160T3 Unit Thermal Resistance RqJL C/W. Junction to Lead (TL = 25 C) 13. ELECTRICAL CHARACTERISTICS (TA = 25 C, Unless otherwise noted).

4 Maximum Instantaneous Forward Voltage (Note 1) vF V. (iF = A, TJ = 25 C) (iF = A, TJ = 150 C) Maximum Instantaneous Reverse Current (Note 1) iR mA. (Rated DC Voltage, TJ = 25 C) (Rated DC Voltage, TJ = 150 C) 50 150. Maximum Reverse Recovery Time trr ns (iF = A, di/dt = 50 A/ms, VR = 30 V) 35 75. (iF = A, iR = A, IR to A) 25 50. Maximum Forward Recovery Time tfr ns (iF = A, di/dt = 100 A/ms, Rec. to V) 25 50. Typical Peak Reverse Recovery Current IRM A. (IF = A, di/dt = 50 A/ms). 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v DEVICE MARKING AND ORDERING INFORMATION. Device Marking Package Shipping . MURS105T3G, U1A SMB 2,500 Units / Tape & Reel SURS8105T3G* (Pb Free). MURS110T3G, NRVUS110VT3G* U1B SMB 2,500 Units / Tape & Reel SURS8110T3G* (Pb Free). MURS115T3G, U1C SMB 2,500 Units / Tape & Reel SURS8115T3G* (Pb Free). MURS120T3G , NRVUS120VT3G * U1D SMB 2,500 Units / Tape & Reel SURS8120T3G * (Pb Free). MURS140T3G, U1G SMB 2,500 Units / Tape & Reel SURS8140T3G* (Pb Free).

5 MURS160T3G, NRVUS160VT3G* U1J SMB 2,500 Units / Tape & Reel SURS8160T3G* (Pb Free). For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRVUS and SURS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q101. Qualified and PPAP Capable. 2. MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series MURS105T3G, MURS110T3G, MURS115T3G, MURS120T3G , SURS8105T3G, SURS8110T3G, SURS8115T3G, SURS8120T3G , NRVUS110VT3G, NRVUS120VT3G . 10 80. 40 TJ = 175 C. 20. IR, REVERSE CURRENT (m A). TJ = 100 C. 175 C 100 C i , INSTANTANEOUS FORWARD CURRENT (AMPS). TJ = 25 C. TC = 25 C. 0 20 40 60 80 100 120 140 160 180 200. VR, REVERSE VOLTAGE (VOLTS). Figure 2. Typical Reverse Current*. *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR.

6 50. F. 45. 40 NOTE: TYPICAL. CAPACITANCE AT. C, CAPACITANCE (pF). 35 0 V = 45 pF. 30. 25. 20. 15. 10. 0. vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 10 20 30 40 50 60 70 80 90 100. Figure 1. Typical Forward Voltage VR, REVERSE VOLTAGE (VOLTS). Figure 3. Typical Capacitance PF(AV) , AVERAGE POWER DISSIPATION (WATTS). 10. IF(AV) , AVERAGE FORWARD CURRENT (AMPS). RATED VOLTAGE APPLIED TJ = 175 C. RqJC = 13 C/W. TJ = 175 C I 10. (CAPACITANCE LOAD) PK + 20. I. AV. DC. DC. SQUARE WAVE. SQUARE WAVE. 0 0. 80 90 100 110 120 130 140 150 160 170 180 0 TC, CASE TEMPERATURE ( C) IF(AV), AVERAGE FORWARD CURRENT (AMPS). Figure 4. Current Derating, Case Figure 5. Power Dissipation 3. MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series MURS140T3G, MURS160T3G, SURS8140T3G, SURS8160T3G, NRVUS160VT3G. 10 400. 200. 80 TJ = 175 C. IR, REVERSE CURRENT (m A). 175 C 40. 20. 100 C TJ = 100 C. TC = 25 C i , INSTANTANEOUS FORWARD CURRENT (AMPS). TJ = 25 C. 0 100 200 300 400 500 600 700.

7 VR, REVERSE VOLTAGE (VOLTS). Figure 7. Typical Reverse Current*. *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. 25. F. 20 NOTE: TYPICAL. CAPACITANCE AT. C, CAPACITANCE (pF). 0 V = 24 pF. 15. 10. 0. vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 12 16 20 24 28 32 36 40. Figure 6. Typical Forward Voltage VR, REVERSE VOLTAGE (VOLTS). Figure 8. Typical Capacitance PF(AV) , AVERAGE POWER DISSIPATION (WATTS). 10. IF(AV) , AVERAGE FORWARD CURRENT (AMPS). (CAPACITANCE LOAD) 10 RATED VOLTAGE APPLIED. RqJC = 13 C/W I. PK + 20 SQUARE WAVE. TJ = 175 C I. AV. DC. TJ = 175 C. DC. SQUARE WAVE. 0 0. 0 20 40 60 80 100 120 140 160 180 200 0 TC, CASE TEMPERATURE ( C) IF(AV), AVERAGE FORWARD CURRENT (AMPS). Figure 9. Current Derating, Case Figure 10. Power Dissipation 4. MECHANICAL CASE OUTLINE.

8 PACKAGE DIMENSIONS. SMB. CASE 403A 03. ISSUE J. SCALE 1:1 SCALE 1:1 DATE 19 JUL 2012. Polarity Band Non Polarity Band HE. NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI , 1982. E 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. MILLIMETERS INCHES. DIM MIN NOM MAX MIN NOM MAX. A b D A1 b c D E POLARITY INDICATOR HE OPTIONAL AS NEEDED. L L1 REF REF. A GENERIC. MARKING DIAGRAM*. A1. L L1 c AYWW AYWW. XXXXXG XXXXXG. G G. soldering FOOTPRINT*. Polarity Band Non Polarity Band XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb Free Package (Note: Microdot may be in either location). *This information is generic. Please refer to device data sheet for actual part marking. Pb Free indicator, G or microdot G , may or may not be present. SCALE 8:1 inches mm . *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

9 Electronic versions are uncontrolled except when accessed directly from the Document Repository. DOCUMENT NUMBER: 98 ASB42669B Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. DESCRIPTION: SMB PAGE 1 OF 1. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

10 Semiconductor Components Industries, LLC, 2019 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi's product/patent coverage may be accessed at onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.


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