N-channel 60 V, 4.6 mΩ - Nexperia

1 1. Product General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive Applications DC-to-DC converters Load switching Motor control Server power Quick reference data [1]Continuous current is limited by 60 V, m standard level MOSFET in TO220 Rev. 3 18 April 2012 Product data sheetTable reference dataSymbolParameterConditionsMinTypMaxUn itVDSdrain-source voltageTj 25 C; Tj 175 C--60 VIDdrain currentTmb=25 C; see Figure 1[1]--100 APtottotal power dissipationTmb=25 C; see Figure 2--211 WTjjunction temperature-55-175 CStatic characteristicsRDSondrain-source on-state resistanceVGS=10V; ID=25A; Tj= 175 C;see Figure VGS=10V; ID=25A; Tj=25 C;see Figure Dynamic characteristicsQGDgate-drain chargeVGS=10V; ID=25A; VDS=30V;see Figure 14; see Figure (tot)total gate ruggednessEDS(AL)Snon-repetitive drain-source avalanche energyVGS=10V; Tj(init)=25 C; ID=100A; Vsup 60 V; RGS=50 ; unclamped--266mJ Nexperia 2017.

2 All rights reservedPSMN4R6-60 PSAll information provided in this document is subject to legal data sheetRev. 3 18 April 20122 of 14 NexperiaPSMN4R6-60 PSN- channel 60 V, m standard level MOSFET in TO2202. Pinning information 3. Ordering information 4. Marking Table informationPinSymbolDescriptionSimplifie d outlineGraphic symbol1 GgateSOT78 (TO-220AB)2 Ddrain3 SsourcembDmounting base; connected to drain12mb3 SDGmbb076 Table informationType numberPackageNameDescriptionVersionPSMN4 R6-60 PSTO-220 ABplastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 ABSOT78 Table codesType numberMarking codePSMN4R6-60 PSPSMN4R6-60PS Nexperia 2017. All rights reservedPSMN4R6-60 PSAll information provided in this document is subject to legal data sheetRev. 3 18 April 20123 of 14 NexperiaPSMN4R6-60 PSN- channel 60 V, m standard level MOSFET in TO2205.

3 Limiting values [1]Continuous current is limited by package. Table valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).SymbolParameterConditionsMinMaxUn itVDSdrain-source voltageTj 25 C; Tj 175 C-60 VVDGR drain-gate voltageTj 25 C; Tj 175 C; RGS=20k -60 VVGS gate-source voltage-2020 VIDdrain currentTmb= 100 C; see Figure 1[1] C; see Figure 1[1]-100 AIDM peak drain currentpulsed; tp=10 s; Tmb=25 C;see Figure 3-565 APtottotal power dissipationTmb=25 C; see Figure 2-211 WTstgstorage temperature-55175 CTjjunction temperature-55175 CSource-drain diodeISsource currentTmb=25 C[1]-100 AISM peak source currentpulsed; tp=10 s; Tmb= 25 C-565 AAvalanche ruggednessEDS(AL)Snon-repetitive drain-source avalanche energyVGS=10V; Tj(init)=25 C; ID= 100 A; Vsup 60 V; RGS=50 ; unclamped-266mJFig drain current as a function of mounting base temperatureFig total power dissipation as a function of mounting base temperature003aad76005010015005010015020 0 Tmb ( C)ID(A)(1)Tmb ( C)02001505010003aa164080120 Pder(%)0 Nexperia 2017.

4 All rights reservedPSMN4R6-60 PSAll information provided in this document is subject to legal data sheetRev. 3 18 April 20124 of 14 NexperiaPSMN4R6-60 PSN- channel 60 V, m standard level MOSFET in TO2206. Thermal characteristics Fig operating area; continuous and peak drain currents as a function of drain-source voltage003aad76110 1110102103110 VDS (V)ID(A)DCLimit RDSon = VDS / ID10 ms10 1102100 s 100 ms1 mstp =10 sTable characteristicsSymbolParameterConditions MinTypMaxUnitRth(j-mb)thermal resistance from junction to mounting basesee Figure thermal impedance from junction to mounting base as a function of pulse duration; typical 110 510 410 310 210 1 1tp (S)Zth(j-mb) (K/W) = 10 610 110 210 3tptpTPtT = Nexperia 2017. All rights reservedPSMN4R6-60 PSAll information provided in this document is subject to legal data sheetRev.

5 3 18 April 20125 of 14 NexperiaPSMN4R6-60 PSN- channel 60 V, m standard level MOSFET in TO2207. Characteristics Table characteristicsV(BR)DSSdrain-source breakdown voltageID=250 A; VGS=0V; Tj= -55 C54--VID=250 A; VGS=0V; Tj=25 C60--VVGS(th)gate-source threshold voltageID=1mA; VDS=VGS; Tj=25 C;see Figure 10; see Figure 11234 VVGS thgate-source threshold voltageID=1mA; VDS=VGS; Tj=-55 C;see Figure ; VDS=VGS; Tj= 175 C;see Figure 111--VIDSS drain leakage currentVDS=60V; VGS=0V; Tj= 25 AVDS=60V; VGS=0V; Tj= 125 C--200 AIGSS gate leakage currentVGS=-20V; VDS=0V; Tj= 25 C-10100nAVGS=20V; VDS=0V; Tj= 25 C-10100nARDS ondrain-source on-state resistanceVGS=10V; ID=25A; Tj= 175 C;see Figure VGS=10V; ID=25A; Tj= 100 C;see Figure VGS=10V; ID=25A; Tj=25 C;see Figure RGgate resistancef = 1 Dynamic characteristicsQG(tot)total gate chargeID=0A; VDS=0V; VGS=10V;see Figure 14-63-nCID=25A; VDS=30V; VGS=10V;see Figure 14.

6 See Figure (th)pre-threshold gate-source chargeID=25A; VDS=30V; VGS=10V;see Figure (th-pl)post-threshold gate-source charge-6-nCQGD gate-drain chargeID=25A; VDS=30V; VGS=10V;see Figure 14; see Figure (pl)gate-source plateau voltageVDS=30V; see Figure 14;see Figure capacitanceVDS=30V; VGS= 0 V; f = 1 MHz; Tj=25 C; see Figure 16-4426-pFCossoutput capacitance-567-pFCrssreverse transfer capacitance-293-pFtd(on)turn-on delay timeVDS=30V; RL= ; VGS=10V; RG(ext)= -26-nstrrise time-24-nstd(off)turn-off delay time-58-nstffall time-22-ns Nexperia 2017. All rights reservedPSMN4R6-60 PSAll information provided in this document is subject to legal data sheetRev. 3 18 April 20126 of 14 NexperiaPSMN4R6-60 PSN- channel 60 V, m standard level MOSFET in TO220 Source-drain diodeVSDsource-drain voltageIS=25A; VGS=0V; Tj=25 C;see Figure recovery timeIS=25A; dIS/dt = -100 A/ s; VGS=0V; VDS=30V-45-nsQrrecovered charge-64-nCTable.

7 ContinuedSymbolParameterConditionsMinTyp MaxUnitFig characteristics: drain current as a function of drain-source voltage; typical valuesFig transconductance as a function of drain current; typical valuesFig characteristics: drain current as a function of gate-source voltage; typical valuesFig and reverse transfer capacitances as a function of gate-source voltage, typical (V)ID(A) (V) = 4003aad7690204060801000 20406080100ID (A)gfs(S)003aad7650204060801000246 VGS (V)ID(A)Tj = 175 CTj = 25 C003aad7640200040006000800004812 VGS (V)C (pF)CissCrss Nexperia 2017. All rights reservedPSMN4R6-60 PSAll information provided in this document is subject to legal data sheetRev. 3 18 April 20127 of 14 NexperiaPSMN4R6-60 PSN- channel 60 V, m standard level MOSFET in TO220 Fig on-state resistance as a function of gate-source voltage; typical valuesFig 10.

8 Sub-threshold drain current as a function of gate-source voltageFig 11. Gate-source threshold voltage as a function of junction temperatureFig 12. Normalized drain-source on-state resistance factor as a function of junction (V)RDSon(m )03aa35 VGS (V)064210 410 510 210 310 1ID(A)10 6mintypmaxTj ( C) 60180120060003aad28023145 VGS(th)(V) ( C)a Nexperia 2017. All rights reservedPSMN4R6-60 PSAll information provided in this document is subject to legal data sheetRev. 3 18 April 20128 of 14 NexperiaPSMN4R6-60 PSN- channel 60 V, m standard level MOSFET in TO220 Fig 13. Drain-source on-state resistance as a function of drain current; typical valuesFig 14. Gate charge waveform definitionsFig 15. Gate-source voltage as a function of gate charge; typical valuesFig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values003aad7670481216020406080100ID (A) = V5 10 (m )003aaa508 VGSVGS(th)QGS1 QGS2 QGDVDSQG(tot)IDQGSVGS(pl)003aad771024681 0020406080QG (nC)VGS(V)48 VDS (V) = 3012003aad76810210310410 1110102 VDS (V)C (pF)CissCossCrss Nexperia 2017.

9 All rights reservedPSMN4R6-60 PSAll information provided in this document is subject to legal data sheetRev. 3 18 April 20129 of 14 NexperiaPSMN4R6-60 PSN- channel 60 V, m standard level MOSFET in TO220 Fig 17. Source current as a function of source-drain voltage; typical (V)IS(A)Tj = 175 CTj = 25 C Nexperia 2017. All rights reservedPSMN4R6-60 PSAll information provided in this document is subject to legal data sheetRev. 3 18 April 201210 of 14 NexperiaPSMN4R6-60 PSN- channel 60 V, m standard level MOSFET in TO2208. Package outline Fig 18. Package outline SOT78 (TO-220AB)REFERENCESOUTLINEVERSIONEUROPE ANPROJECTIONISSUE DATEIECJEDECJEITASOT78SC-463-lead TO-220 ABSOT7808-04-2308-06-13 Notes1. Lead shoulder designs may Dimension includes excess (mm are the original dimensions)Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB0510 mmscalebb1(2) (2) (1)L2(1) (1)b1(2)(3 )b2(2)(2 )eeb(3 )AEA1cQL2(1)mountingbase Nexperia 2017.

10 All rights reservedPSMN4R6-60 PSAll information provided in this document is subject to legal data sheetRev. 3 18 April 201211 of 14 NexperiaPSMN4R6-60 PSN- channel 60 V, m standard level MOSFET in TO2209. Revision history Table historyDocument IDRelease dateData sheet statusChange noticeSupersedesPSMN4R6-60PS data sheet-PSMN4R6-60PS : Various changes to data sheet-PSMN4R6-60PS Nexperia 2017. All rights reservedPSMN4R6-60 PSAll information provided in this document is subject to legal data sheetRev. 3 18 April 201212 of 14 NexperiaPSMN4R6-60 PSN- channel 60 V, m standard level MOSFET in TO22010. Legal Data sheet status [1]Please consult the most recently issued document before initiating or completing a design.[2]The term 'short data sheet' is explained in section "Definitions".[3]The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices.