N-channel 800V - 1.9 - 4.3A - TO-220/TO-220FP …

1 August 2006 Rev 41/1515 STP5NK80 ZSTP5NK80 ZFPN-channel 800V - - - TO-220/TO-220 FPZener-protected SuperMESH Power MOSFETG eneral features 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibilityDescriptionThe SuperMESH series is obtained through an extreme optimization of ST s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage mosfets including revolutionary MDmesh Switching applicationInternal schematic diagram TypeVDSS (@Tjmax)RDS(on)IDSTP5NK80Z800 V< ASTP5NK80 ZFP800 V< codesPart numberMarkingPackagePackagingSTP5NK80ZP5 NK80 ZTO-220 TubeSTP5NK80 ZFPP5NK80 ZFPTO-220 FPTubeContentsSTP5NK80Z - STP5NK80 ZFP 2/15 Contents1 Electrical ratings.

2 32 Electrical characteristics .. characteristics (curves) .. 73 Test circuit .. 104 Package mechanical data .. 115 Packaging mechanical data .. 12 STP5NK80Z - STP5NK80 ZFP Electrical ratings3/151 Electrical ratingsTable maximum ratingsSymbolParameterValueUnitTO-220TO- 220 FPVDSD rain-source voltage (VGS = 0)800 VVGSGate-source voltage 30 VIDD rain current (continuous) at TC = 25 (1)1.

3 Limited only by maximum temperature allowed AIDD rain current (continuous) at TC=100 (1)AIDM(2)2. Pulse width limited by safe operating areaDrain current (pulsed) (1)APTOTT otal dissipation at TC = 25 C11030 WDerating CVESD(G-S)Gate source ESD(HBM-C=100pF, R= )3500 Vdv/dt (3)3. ISD , di/dt 200A/ s, VDD V(BR)DSS, Tj diode recovery voltage withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc= 25 C)-2500 VTJTstgOperating junction temperatureStorage temperature-55 to 150 CTable dataSymbolParameterValueUnitTO-220TO-220 FPRthj-caseThermal resistance junction-case C/WRthj-aThermal resistance junction-ambient C/WTlMaximum lead temperature for soldering purpose300 CElectrical ratingsSTP5NK80Z - STP5NK80 ZFP 4/15 Protection features of gate-to-source zener diodesThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device s ESD capability.

4 But also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device s integrity. These integrated Zener diodes thus avoid the usage of external characteristicsSymbolParameterValueUnitI ARA valanche current, repetitive or not-repetitive(pulse width limited by Tj Max) pulse avalanche energy(starting Tj=25 C, Id=Iar, Vdd=50V)190mJTable zener diodeSymbolParameterTest breakdown voltage Igs= 1mA (Open Drain)30 VSTP5NK80Z - STP5NK80 ZFP Electrical characteristics5/152 Electrical characteristics(TCASE=25 C unless otherwise specified)Table statesSymbolParameterTest (BR)

5 DSSD rain-source breakdown voltageID = 1mA, VGS= 0800 VIDSSZero gate voltage drain current (VGS = 0)VDS = Max rating,VDS = Max rating,Tc = 125 C150 A AIGSSGate body leakage current (VGS = 0)VGS = 20V 10 AVGS(th)Gate threshold voltageVDS = VGS, ID = 100 (on)Static drain-source on resistanceVGS = 10V, ID = Table (1)1. Pulsed: pulse duration=300 s, duty cycle transconductance VDS =15V, ID = capacitanceOutput capacitanceReverse transfer capacitanceVDS =25V, f=1 MHz, VGS=09109820pFpFpFCosseq(2).2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSSE quivalent output capacitanceVGS=0, VDS =0V to 400V40pFtd(on)trtd(off)trTurn-on delay timeRise timeTurn-on delay timefall timeVDD=400 V, ID= 2 A, RG= , VGS=10V(see Figure 18)18254530nsnsnsnsQgQgsQgdTotal gate chargeGate-source chargeGate-drain chargeVDD=640V, ID = VGS = (Voff)trOff-voltage rise timeFall timeCross-over timeVDD=640 V, ID= A, RG= , VGS=10V(see Figure 20)

6 221032nsnsnsElectrical characteristicsSTP5NK80Z - STP5NK80 ZFP 6/15 Table drain diodeSymbolParameterTest (1)1. Pulse width limited by safe operating areaSource-drain current (pulsed) (2)2. Pulsed: pulse duration=300 s, duty cycle on voltage ISD= A, VGS= recovery timeReverse recovery chargeReverse recovery currentISD= A,di/dt = 100A/ s,VDD=40 V, Tj = 150 C(see Figure 20)500312ns CASTP5NK80Z - STP5NK80 ZFP Electrical characteristics7 Electrical characteristics (curves) Figure operating area for TO-220 Figure impedance for TO-220 Figure operating area for TO-220FP (HV11720)

7 Figure impedance for TO-220FP Figure characterisicsFigure characteristics Electrical characteristicsSTP5NK80Z - STP5NK80 ZFP 8/15 Figure drain-source on resistance Figure charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperatureFigure 12. Normalized on resistance vs temperature STP5NK80Z - STP5NK80 ZFP Electrical characteristics9/15 Figure 13. Source-drain diode forward characteristicsFigure 14.

8 Normalized BVdss vs temperature Figure 15. Avalanche energy vs temperature Test circuitSTP5NK80Z - STP5NK80 ZFP 10/15 3 Test circuit Figure 16. Unclamped Inductive load test circuitFigure 17. Unclamped Inductive waveformFigure 18. Switching times test circuit for resistive loadFigure 19. Gate charge test circuitFigure 20. Test circuit for inductive load switching and diode recovery timesSTP5NK80Z - STP5NK80 ZFP Package mechanical data11/154 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in ECOPACK packages.

9 These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: mechanical dataSTP5NK80Z - STP5NK80 ZFP 12/15 MECHANICAL DATASTP5NK80Z - STP5NK80 ZFP Package mechanical data13 MECHANICAL DATAR evision historySTP5NK80Z - STP5NK80 ZFP 14/15 5 Revision historyTable historyDateRevisionChanges09-Sep-20042 Preliminary version06-Sep-20053 Final version16-Aug-20064 New template, no content changeSTP5NK80Z - STP5NK80 ZFP 15/15 Please Read Carefully:Information in this document is provided solely in connection with ST products.

10 STMicroelectronics NV and its subsidiaries ( ST ) reserve theright to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at anytime, without ST products are sold pursuant to ST s terms and conditions of are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes noliability whatsoever relating to the choice, selection or use of the ST products and services described license, express or implied, by estoppel or otherwise.