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N-Channel Reduced Qg, Fast Switching MOSFET

Si4800 BDY. vishay Siliconix N-Channel Reduced Qg, fast Switching MOSFET . PRODUCT SUMMARY FEATURES. VDS (V) RDS(on) ( ) ID (A) Halogen-free According to IEC 61249-2-21. Available at VGS = 10 V 9. 30 TrenchFET Power MOSFET . at VGS = V 7. High-Efficient PWM Optimized 100 % UIS and Rg Tested SO-8. D. S 1 8 D. S 2 7 D. S 3 6 D. G 4 5 D. G. Top View S. Ordering Information: Si4800 BDY-T1-E3 (Lead (Pb)-free). Si4800 BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET . ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 30. V. Gate-Source Voltage VGS 25. TA = 25 C 9 Continuous Drain Current (TJ = 150 C)a, b ID. TA = 70 C Pulsed Drain Current (10 s Pulse Width) IDM 40 A. Continuous Source Current (Diode Conduction)a, b IS Avalanche Current IAS 15.

Vishay Siliconix Si4800BDY Document Number: 72124 S-83039-Rev. H, 29-Dec-08 www.vishay.com 1 N-Channel Reduced Qg, Fast Switching MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available † TrenchFET® Power MOSFET † High-Efficient PWM Optimized

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Transcription of N-Channel Reduced Qg, Fast Switching MOSFET

1 Si4800 BDY. vishay Siliconix N-Channel Reduced Qg, fast Switching MOSFET . PRODUCT SUMMARY FEATURES. VDS (V) RDS(on) ( ) ID (A) Halogen-free According to IEC 61249-2-21. Available at VGS = 10 V 9. 30 TrenchFET Power MOSFET . at VGS = V 7. High-Efficient PWM Optimized 100 % UIS and Rg Tested SO-8. D. S 1 8 D. S 2 7 D. S 3 6 D. G 4 5 D. G. Top View S. Ordering Information: Si4800 BDY-T1-E3 (Lead (Pb)-free). Si4800 BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET . ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 30. V. Gate-Source Voltage VGS 25. TA = 25 C 9 Continuous Drain Current (TJ = 150 C)a, b ID. TA = 70 C Pulsed Drain Current (10 s Pulse Width) IDM 40 A. Continuous Source Current (Diode Conduction)a, b IS Avalanche Current IAS 15.

2 L = mH. Single-Pulse Avalanche Energy EAS mJ. TA = 25 C Maximum Power Dissipationa, b PD W. TA = 70 C Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 C. THERMAL RESISTANCE RATINGS. Limits Parameter Symbol Typ. Max. Unit t 10 s 40 50. Maximum Junction-to-Ambienta RthJA. Steady State 70 95 C/W. Maximum Junction-to-Foot (Drain) Steady State RthJF 24 30. Notes: a. Surface Mounted on FR4 board. b. t 10 s. Document Number: 72124 S-83039-Rev. H, 29-Dec-08 1. Si4800 BDY. vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A V. Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V 100 nA. VDS = 30 V, VGS = 0 V 1. Zero Gate Voltage Drain Current IDSS A.

3 VDS = 30 V, VGS = 0 V, TJ = 55 C 5. On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 30 A. VGS = 10 V, ID = 9 A Drain-Source On-State Resistancea RDS(on) . VGS = V, ID = 7 A Forward Transconductancea gfs VDS = 15 V, ID = 9 A 16 S. a VSD IS = A, VGS = 0 V V. Diode Forward Voltage Dynamicb Total Gate Charge Qg 13. Gate-Source Charge Qgs VDS = 15 V, VGS = V, ID = 9 A nC. Gate-Drain Charge Qgd Gate Resistance Rg . Turn-On Delay Time td(on) 7 15. Rise Time tr VDD = 15 V, RL = 15 12 20. Turn-Off Delay Time td(off) ID 1 A, VGEN = 10 V, Rg = 6 32 50 ns Fall Time tf 14 25. Source-Drain Reverse Recovery Time trr IF = A, dI/dt = 100 A/ s 30 60. Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.

4 These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 72124. 2 S-83039-Rev. H, 29-Dec-08. Si4800 BDY. vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 40. VGS = 10 thru 5 V 4V. TC = - 55 C. 35 35. 25 C. 30 30. I D - Drain Current (A). I D - Drain Current (A). 25 25. 125 C. 20 20. 3V. 15 15. 10 10. 5 5. 0 0. 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V). Output Characteristics Transfer Characteristics 1200. 1000. R DS(on) - On-Resistance ( ). C - Capacitance (pF).

5 Ciss VGS = V 800. 600. VGS = 10 V. 400. Coss 200. Crss 0. 0 5 10 15 20 25 30 0 4 8 12 16 20. ID - Drain Current (A) VDS - Drain-to-Source Voltage (V). On-Resistance vs. Drain Current Capacitance 6 VDS = 15 V VGS = 10 V. ID = 9 A. V GS - Gate-to-Source Voltage (V). ID = 9 A 5. RDS(on) - On-Resistance 4 (Normalized). 3 2 1 0 0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150. Qg - Total Gate Charge (nC) TJ - Junction Temperature ( C). Gate Charge On-Resistance vs. Junction Temperature Document Number: 72124 S-83039-Rev. H, 29-Dec-08 3. Si4800 BDY. vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50. r DS(on) - On-Resistance ( ). I S - Source Current (A). TJ = 150 C 10 ID = 9 A. TJ = 25 C. 1. 0 2 4 6 8 10. VGS - Gate-to-Source Voltage (V). VSD - Source-to-Drain Voltage (V).

6 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 150. 120. ID = 250 A. V GS(th) Variance (V). 90. Power (W). - 60. - - 30. - 0. - 50 - 25 0 25 50 75 100 125 150. 10-3 10-2 10-1 1 10. TJ - Temperature ( C) Time (s). Threshold Voltage Single Pulse Power, Junction-to-Ambient 100. Limited by R DS(on)*. 10. I D - Drain Current (A). 1 ms 1. 10 ms 100 ms 1s TC = 25 C 10 s Single Pulse DC. 1 10 100. VDS - Drain-to-Source Voltage (V). * VGS > minimum V GS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 72124. 4 S-83039-Rev. H, 29-Dec-08. Si4800 BDY. vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2. 1. Normalized Effective Transient Duty Cycle = Thermal Impedance Notes: PDM. t1. t2.

7 T1. 1. Duty Cycle, D =. t2. 2. Per Unit Base = R thJA = 70 C/W. 3. T JM - TA = PDMZthJA(t). Single Pulse 4. Surface Mounted 10-4 10-3 10-2 10-1 1 10 100 600. Square Wave Pulse Duration (s). Normalized Thermal Transient Impedance, Junction-to-Ambient 2. 1. Normalized Effective Transient Duty Cycle = Thermal Impedance Single Pulse 10-4 10-3 10-2 10-1 1 10. Square Wave Pulse Duration (s). Normalized Thermal Transient Impedance, Junction-to-Foot vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see Document Number: 72124 S-83039-Rev.

8 H, 29-Dec-08 5. Package Information vishay Siliconix SOIC (NARROW): 8-LEAD. JEDEC Part Number: MS-012. 8 7 6 5. E H. 1 2 3 4. S. D h x 45. C. mm (Gage Plane). A. All Leads q mm e B A1 L. ". MILLIMETERS INCHES. DIM Min Max Min Max A A1 B C D E e BSC BSC. H h L q 0 8 0 8 . S ECN: C-06527-Rev. I, 11-Sep-06. DWG: 5498. Document Number: 71192 11-Sep-06 1. Application Note 826. vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8. ( ). ( ). ( ). ( ). ( ). ( ) ( ). Recommended Minimum Pads Dimensions in Inches/(mm). Return to Index Return to Index APPLICATION NOTE. Document Number: 72606. 22 Revision: 21-Jan-08. Legal Disclaimer Notice vishay Disclaimer . ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE. RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

9 vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

10 Statements regarding the suitability of products for certain types of applications are based on vishay 's knowledge of typical requirements that are often placed on vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify vishay 's terms and conditions of purchase, including but not limited to the warranty expressed therein.


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