NTE2382 N Channel Enhancement Mode, High Speed Switch ...

1 NTE2382 . MOSFET. N Channel Enhancement Mode, high Speed Switch ( compl to nte2383 ). Description: The NTE2382 is a MOS power N Channel FET in a to220 type package designed for high voltage, high Speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D. D Lower RDS(ON). D Improved Inductive Ruggedness D Fast Switching Times D Rugged Polysilicon Gate Cell Structure D Lower Input Capacitance G. D Extended Safe Operating Area D Improved high Temperature Reliability S. Absolute Maximim Ratings: Drain Source Voltage (Note 1), VDSS.

2 100V. Drain Gate Voltage (RGS = 1M+ , Note 1), VDGR .. 100V. Gate Source Voltage, VGS .. +20V. Continuous Drain Current, ID. TC = +255C .. TC = +1005C .. Drain Current, Pulsed (Note 3), IDM .. 37A. Gate Current, Pulsed, IGM .. + Single Pulsed Avalanvhe Energy (Note 4), EAS .. 36mJ. Avalanche Current, IAS .. Total Power Dissipation (TC = +255C), PD .. 50W. Derate Above 255C .. Operating Junction Temperature Range, Topr .. 555 to +1505C. Storage Temperature Range, Tstg .. 555 to +1505C. Thermal Resistance, Junction to Ambient, RthJA .. Thermal Resistance, Junction to Case, RthJC.

3 Thermal Resistance, Case to Sink (Note 5), RthCS .. Maximum Lead Temperature (During Soldering, 1/8 from case, 5sec), TL .. +3005C. Note 1. TJ = +255 to +1505C. Note 2. Pulse Test: Pulse Width 3 , Duty Cycle 3 2%. Note 3. Repetitive rating: Pulse width limited by max. junction temperature. Rev. 10 13. Note 4. L = 64mH, VDD = 25V, RG = 25+ , Starting TJ = +255C. Note 5. Mounting surface flat, smooth, and greased. Electrical Characteristics: (TC = +255C unless otherwise specified). Parameter Symbol Test Conditions Min Typ Max Unit Drain Source Breakdown Voltage V(BR)DSS VGS = 0, ID = 100 V.

4 Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0 mA. VDS = 80V, VGS = 0, TJ = +1255C mA. Gate Body Leakage Current, Forward IGSS VGS = 20V 100 nA. Gate Body Leakage Current, Reverse IGSS VGS = 20V 100 nA. Gate Threshold Voltage VGS(th) VDS = VGS, ID = V. Static Drain Source On Resistance rDS(on) VGS = 10V, ID = , Note 2 +. Forward Transconductance gFS VDS . 50V, ID = , Note 2 mhos Input Capacitance Ciss VDS = 25V, VGS = 0, f = 1 MHz 400 pF. Output Capacitance Coss 130 pF. Reverse Transfer Capacitance Crss 40 pF. Turn On Delay Time td(on) VDD = 50V, ID = , ZO = 18+ , ns MOSFET switching times are Rise Time tr essentially independent of operating 30 45 ns Turn Off Delay Time td(off) temperature 19 27 ns Fall Time tf 20 30 ns Total Gate Charge Qg VGS = 10V, VDS = 80V, ID = , 23 nC.

5 Gate charge is essentially Gate Source Charge Qgs independent of operating nC. Gate Drain ( Miller ) Charge Qgd temperature ns Source Drain Diode Ratings and Characteristics Continuous Source Current IS A. (Body Diode). Pulse Source Current (Body Diode) ISM Note 3 37 A. Diode Forward Voltage VSD TJ = +255C, IS = , VGS = 0V, V. Note 2. Reverse Recovery Time trr TJ = +255C, IF = , 110 240 ns dIF/dt = 100A/.s Note 2. Pulse Test: Pulse Width 3 , Duty Cycle 3 2%. Note 3. Repetitive rating: Pulse width limited by max. junction temperature..420 ( ). Max .110 ( )..147 ( ) Dia Max .500. ( ).

6 Max .250 ( ). Max .500. ( ). Min .070 ( ) Max Gate Source .100 ( ) Drain/Tab