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1 August 2006 Rev 41/1212 IRF740N-channel 400V - - 10A TO-220 PowerMESH II Power MOSFETG eneral features Exceptional dv/dt capability 100% avalanche tested Low gate charge Very low intrinsic capacitancesDescriptionThe PowerMESH II is the evolution of the first generation of MESH OVERLAY . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and Switching applicationInternal schematic diagram TypeVDSS codesPart numberMarkingPackagePackagingIRF740 IRF740@TO-220 TubeObsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) ContentsIRF7402/12 Contents1 Electrical ratings.

2 32 Electrical characteristics .. characteristics (curves) .. 63 Test circuit .. 84 Package mechanical data .. 95 Revision history .. 11 Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) IRF740 Electrical ratings3/121 Electrical ratingsTable maximum ratingsSymbolParameterValueUnitVDSD rain-source voltage (VGS = 0)400 VVDGRD rain-gate voltage (RGS = 20 k )400 VVGSGate- source voltage 20 VIDD rain current (continuous) at TC = 25 C10 AIDD rain current (continuous) at TC = 100 (1)1. Pulse width limited by safe operating current (pulsed)40 APtotTotal dissipation at TC = 25 C125 WDerating Cdv/dt (2)2. ISD 10A, di/dt 300A/ s, VDD V(BR)DSS, Tj TJMAXPeak diode recovery voltage temperature-65 to 150 CTjMax.

3 Operating junction temperatureTable dataRthj-caseThermal resistance junction-case max 1 C/WRthj-ambThermal resistance junction-ambient max C/WTJM aximum lead temperature for soldering purpose300 CTable characteristicsSymbolParameterValueUnitI ARA valanche current, repetitive or not-repetitive(pulse width limited by Tj Max)10 AEASS ingle pulse avalanche energy(starting Tj=25 C, Id=Iar, Vdd=50V)520mJ Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) Electrical characteristicsIRF7404/12 2 Electrical characteristics(TCASE=25 C unless otherwise specified) table statesSymbolParameterTest (BR)DSSD rain-source breakdown voltageID = 250 A, VGS= 0400 VIDSSZero gate voltage drain current (VGS = 0)VDS = Max rating,VDS = Max rating @125 C150 A AIGSSGate body leakage current(VDS = 0)VGS = 20V 100nAVGS(th)Gate threshold voltageVDS= VGS, ID = 250 A234 VRDS(on)Static drain-source on resistanceVGS= 10V, ID= table (1)1.

4 Pulsed: pulse duration=300 s, duty cycle transconductanceVDS > ID(on) x RDS(on)max,ID = 6A7 SCissCossCrssInput capacitanceOutput capacitanceReverse transfer capacitanceVDS =25V, f=1 MHz, VGS=0140022027pFpFpFtd(on)trTurn-on delay time Rise TimeVDD = 200V, ID = 5A, RG = , VGS = 10V(see Figure 12)1710nsnsQgQgsQgdTotal gate chargeGate-source chargeGate-drain chargeVDD=320V, ID = VGS =10V35111243nCnCnC Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) IRF740 Electrical characteristics5/12 table drain diodeSymbolParameterTest current10 AISDM(1)1. Pulse width limited by safe operating areaSource-drain current (pulsed)40 AVSD(2)2. Pulsed: pulse duration=300 s, duty cycle on voltage ISD=10A, VGS= recovery timeReverse recovery chargeReverse recovery currentISD=10A, di/dt = 100A/ s,VDD=100V, Tj=150 C(see Figure 12) CA Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) Electrical characteristicsIRF7406/12 Electrical characteristics (curves) Figure operating area Figure impedance Figure characterisicsFigure characteristics Figure drain-source on resistance Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)

5 IRF740 Electrical characteristics7/12 Figure charge vs gate-source voltage Figure variations Figure gate threshold voltage vs temperatureFigure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) Test circuitIRF7408/12 3 Test circuit Figure 12. Switching times test circuit for resistive loadFigure 13. Gate charge test circuitFigure 14. Test circuit for inductive load switching and diode recovery timesFigure 15. Unclamped Inductive load test circuitFigure 16. Unclamped inductive waveformFigure 17. Switching time waveform Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) IRF740 Package mechanical data9/124 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in ECOPACK packages.

6 These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) Package mechanical dataIRF74010/12 MECHANICAL DATA Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) IRF740 Revision history11/125 Revision history table historyDateRevisionChanges09-Sep-20043 Complete version,new datasheet according to PCN DSG/CT/2C14.

7 Special marking: IRF740 @03-Aug-20064 New template, no content change Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) IRF74012/12 Please Read Carefully:Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve theright to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at anytime, without ST products are sold pursuant to ST s terms and conditions of are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes noliability whatsoever relating to the choice, selection or use of the ST products and services described license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document.

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