P-Channel 1.25-W, 2.5-V MOSFET - Vishay

1 Si2301 DSVishay SiliconixDocument Number: 70627S-31990 Rev. E, , MOSFETPRODUCT SUMMARYVDS (V)rDS(on) (W)ID (A) @ VGS = - V- @ VGS = - V- (SOT-23)SDTop View231Si2301DS (A1)**Marking CodeOrdering Information: Si2301DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)ParameterSymbolLimitUnitDrain-Sour ce VoltageVDS-20 VGate-Source VoltageVGS"8 VContinuous Drain Current (TJ = 150_C)bTA= 25_CID- Drain Current (TJ = 150_C)bTA= 70_CID- Drain CurrentaIDM-10 AContinuous Source Current (Diode Conduction)bIS- DissipationbTA= DissipationbTA= Junction and Storage Temperature RangeTJ, Tstg- 55 to 150_CTHERMAL RESISTANCE RATINGSP arameterSymbolLimitUnitMaximum Junction-to-AmbientbR100_C/WMaximum Junction-to-AmbientcRthJA166_ width limited by maximum junction Mounted on FR4 Board, t v 5 Mounted on FR4 SPICE model information via the Worldwide Web: Number.

2 70627S-31990 Rev. E, 13-Oct-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)LimitsParameterSymbolTest ConditionsMinTypMaxUnitStaticDrain-Sourc e Breakdown VoltageV(BR)DSSVGS = 0 V, ID = - 250 mA-20 VGate-Threshold VoltageVGS(th)VDS = VGS, ID = - 250 mA- LeakageIGSSVDS = 0 V, VGS = "8 V"100nAZero Gate Voltage Drain CurrentIDSSVDS = - 20 V, VGS = 0 V-1mAZero Gate Voltage Drain CurrentIDSSVDS = - 20 V, VGS = 0 V, TJ = 55_C-10mAOn State Drain CurrentaID( )VDS v - 5 V, VGS = - V-6 AOn-State Drain CurrentaID(on)VDS v - 5 V, VGS = - V-3 ADrain Source On ResistancearDS( )VGS = - V, ID = - On-ResistancearDS(on)VGS = - V, ID = - TransconductanceagfsVDS = - 5 V, ID = - Forward VoltageVSDIS = - A, VGS = 0 V- Gate ChargeQgsVDS = - 6 V, VGS = - VID ^ - ChargeQgdID ^ CapacitanceCiss415 Output CapacitanceCossVDS = - 6 V, VGS = 0, f = 1 MHz223pFReverse Transfer CapacitanceCrss87 SwitchingcTurn On Timetd(on) TimetrVDD = - 6 V, RL = 6 WID ^ -10 A VGEN = -45 Timetd(off)ID ^ A, VGEN = - VRG = 6 W4270nsTurn-Off test: PW v300 ms duty cycle v2%.

3 DESIGN AID ONLY, not subject to production time is essentially independent of operating SiliconixDocument Number: 70627S-31990 Rev. E, CHARACTERISTICS (25_C UNLESS NOTED)On-Resistance vs. Drain CurrentOutput CharacteristicsTransfer CharacteristicsVDS - Drain-to-Source Voltage (V)- Drain Current (A)IDVGS - Gate-to-Source Voltage (V)- Drain Current (A) = - 55_C125_C0, , 1 VVGS = 5, , 4, , 3 V2 Charge- Gate-to-Source Voltage (V)Qg - Total Gate Charge (nC)VDS - Drain-to-Source Voltage (V)C - Capacitance (pF)VGSCrssCossCissVDS = 6 VID = A- On-Resistance (rDS(on)W)ID - Drain Current (A)CapacitanceOn-Resistance vs. Junction TemperatureVGS = VID = ATJ - Junction Temperature (_C)(Normalized)- On-Resistance (rDS(on)W)VGS = VVGS = V25_CSi2301 DSVishay Number: 70627S-31990 Rev.

4 E, 13-Oct-03 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) (W)- Diode Forward VoltageOn-Resistance vs. Gate-to-Source VoltageThreshold VoltageSingle Pulse PowerNormalized Thermal Transient Impedance, Junction-to-AmbientSquare Wave Pulse Duration (sec) Effective TransientThermal Impedance30- On-Resistance (rDS(on)W)VSD - Source-to-Drain Voltage (V)VGS - Gate-to-Source Voltage (V)- Source Current (A)ISTJ - Temperature (_C)Time (sec)Variance (V)VGS(th) PulseDuty Cycle = = AID = 250 mA10110TC = 25_CSingle Pulse1412840TJ = 25_CTJ = 150_C2610 Document Number: : 18-Jul-081 DisclaimerLegal disclaimer NoticeVishayAll product specifications and data are subject to change without notice .

5 Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay .

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