P-Channel 12-V (D-S) MOSFET - Vishay …

1 Vishay SiliconixSi2333 DSDocument Number: 72023S09-0130-Rev. C, 12-V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET Power MOSFET APPLICATIONS Load Switch PA SwitchNotes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. PRODUCT SUMMARY VDS (V)RDS(on) ( )ID (A)- at VGS = - V - at VGS = - V - at VGS = - V - View23TO-236(SOT-23)1Si2333DS (E3)** Marking CodeOrdering Information:Si2333DS-T1-E3 (Lead (Pb)-free)Si2333DS-T1-GE3 (Lead (Pb)-free and Halogen-free)ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise notedParameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS- 12 VGate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 C)a, bTA = 25 CID- = 70 C- Drain CurrentIDM- 20 Continuous Source Current (Diode Conduction)

2 A, bIS- Power Dissipationa, bTA = 25 = 70 Junction and Storage Temperature Range TJ, Tstg- 55 to 150 CTHERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit Maximum Junction-to-Ambientat 5 sRthJA75100 C/WSteady State120166 Maximum Junction-to-Foot (Drain)Steady Number: 72023S09-0130-Rev. C, 02-Feb-09 Vishay SiliconixSi2333 DSNotes:a. Pulse test: PW 300 s, duty cycle 2 %.b. For design aid only, not subject to production Switching time is essentially independent of operating beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.

3 These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device TJ = 25 C, unless otherwise notedParameter Symbol Test Conditions LimitsUnit Min. Breakdown VoltageV(BR)DSSVGS = 0 V, ID = - 250 A - 12 VGate-Threshold VoltageVGS(th) VDS = VGS, ID = - 250 A - LeakageIGSSVDS = 0 V, VGS = 8 V 100 nAZero Gate Voltage Drain CurrentIDSSVDS = - V, VGS = 0 V - 1 AVDS = - V, VGS = 0 V, TJ = 55 C - 10On-State Drain CurrentaID(on) VDS - 5 V, VGS = - V - 20 ADrain-Source On-ResistanceaRDS(on)

4 VGS = - V, ID = - A VGS = - V, ID = - A = - V, ID = - A Transconductanceagfs VDS = - 5 V, ID = - A 17 SDiode Forward VoltageVSDIS = - A, VGS = 0 V - Gate ChargeQg VDS = - 6 V, VGS = - VID - A ChargeQgs ChargeQgd CapacitanceCissVDS = - 6 V, VGS = 0 V, f = 1 MHz1100pFOutput CapacitanceCoss390 Reverse Transfer CapacitanceCrss300 SwitchingcTu r n - O n T i m etd(on) VDD = - 6 V, RL = 6 ID - A, VGEN = - VRG = 6 2540nstr4570 Turn-Off Timetd(off) 72110tf6090 Document Number: 72023S09-0130-Rev. C, SiliconixSi2333 DSTYPICAL CHARACTERISTICS 25 C, unless otherwise noted Output CharacteristicsOn-Resistance vs. Drain CurrentGate Charge048121620012345 VGS = 5 V thru V1 V2 VID - Drain Current (A)VDS - Drain-to-Source Voltage (V) = VVGS = VVGS = VID - Drain Current (A)- On-Resistance ( )RDS(on)01234503691215 VDS = 6 VID = AVGS - Gate-to-Source Voltage (V)Qg - Total Gate Charge (nC)Transfer CharacteristicsCapacitanceOn-Resistance vs.

5 Junction C125 CTC = - 55 CID - Drain Current (A)VGS - Gate-to-Source Voltage (V)0300600900120015001800036912 CrssCossCissC - Capacitance (pF)VDS - Drain-to-Source Voltage (V) 50- 250255075100125150 VGS = VID = ARDS(on) - On-Resistance (Normalized)TJ - Junction Temperature ( C) Number: 72023S09-0130-Rev. C, 02-Feb-09 Vishay SiliconixSi2333 DSTYPICAL CHARACTERISTICS 25 C, unless otherwise notedSource-Drain Diode Forward VoltageThreshold = 150 C1TJ = 25 CIS - Source Current (A)VSD - Source-to-Drain Voltage (V)- 50- 250255075100125150ID = 140 A Variance (V)VGS(th)TJ - Temperature ( C)On-Resistance vs. Gate-to-Source VoltageSingle Pulse = AID = 2 AVGS - Gate-to-Source Voltage (V)- On-Resistance ( )RDS(on) (W)Time (s)810100TA = 25 CSafe Operating = 25 CSingle PulseP(t) = ID(on)Limited Limited by RDS(on)* BVDSS LimitedP(t) = 1P(t) = (t) = (t) = (t) = - Drain Current (A)VDS - Drain-to-Source Voltage (V)* VGS > minimum VGS at which RDS(on) is specifiedIDML imitedDocument Number: 72023S09-0130-Rev.

6 C, SiliconixSi2333 DSTYPICAL CHARACTERISTICS 25 C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see Thermal Transient Impedance, Junction-to-AmbientSquare Wave Pulse Duration (s)Normalized Effective TransientThermal Cycle = Pulse1001. Duty Cycle, D =2. Per Unit Base = RthJA = 120 C/W3. TJM - TA = PDMZthJA(t)t1t2t1t2 Notes:4. Surface MountedPDMV ishay SiliconixPackage InformationDocument Number: (TO-236): 3-LEADbEE1132 See1DA2AA1 CSeating "CCL1 LqGauge PlaneSeating mmDimMILLIMETERS INCHES Min Max Min Max Refq3 8 3 8 ECN: S-03946-Rev.

7 K, 09-Jul-01 DWG: 5479 Application Note 826 Vishay Siliconix Document Number: : 21-Jan-0825 APPLICATION NOTERECOMMENDED MINIMUM PADS FOR ( )Recommended Minimum PadsDimensions in Inches/(mm) ( ) ( ) ( ) ( ) ( ) ( )Return to IndexReturn to IndexLegal Disclaimer Revision: 01-Jan-20191 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.

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