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P-Channel 20 V (D-S) MOSFET

vishay SiliconixSi1077 XDocument Number: 63254S12-3081-Rev. A, document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT technical questions, contact: 20 V (D-S) MOSFETFEATURES TrenchFET Power MOSFET Typical ESD Performance 2500 V 100 % Rg Te s t e d Material categorization:For definitions of compliance please see Load Switch for Portable Devices Power ManagementNotes:a. Maximum under steady state conditions is 450 Surface mounted on 1" x 1" FR4 t = 5 s. PRODUCT SUMMARY VDS (V)RDS(on) ( ) (A)Qg (Typ.)

Vishay Siliconix Si1077X Document Number: 63254 S12-3081-Rev. A, 24-Dec-12 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED ...

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Transcription of P-Channel 20 V (D-S) MOSFET

1 vishay SiliconixSi1077 XDocument Number: 63254S12-3081-Rev. A, document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT technical questions, contact: 20 V (D-S) MOSFETFEATURES TrenchFET Power MOSFET Typical ESD Performance 2500 V 100 % Rg Te s t e d Material categorization:For definitions of compliance please see Load Switch for Portable Devices Power ManagementNotes:a. Maximum under steady state conditions is 450 Surface mounted on 1" x 1" FR4 t = 5 s. PRODUCT SUMMARY VDS (V)RDS(on) ( ) (A)Qg (Typ.)

2 - at VGS = - V - at VGS = - V - at VGS = - V - at VGS = - V - MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Limit Unit Drain-Source Voltage VDS- 20 VGate-Source Voltage VGS 8

3 Continuous Drain Current (TJ = 150 C)TA = 25 CID- , cATA = 70 C- , cPulsed Drain Current (t = 300 s) IDM- 8 Continuous Source-Drain Diode CurrentTA = 25 CIS- , cMaximum Power DissipationTA = 25 , cWTA = 70 , cOperating Junction and Storage Temperature Range TJ, Tstg- 55 to 150 CTHERMAL RESISTANCE RATINGSP arameter Symbol Typical Maximum Unit

4 Maximum Junction-to-Ambienta, bt 5 sRthJA300375 C/WSteady State 360450 Ordering Information: si1077x -T1-GE3 (Lead (Pb)-free and Halogen-free)Marking CodeLot Traceability and Date Code Part # Code Y Y SC-89 (6-LEADS)641235To p ViewDDGDDSP-Channel MOSFETAXXSDGV ishay SiliconixSi1077 XDocument Number: 63254S12-3081-Rev. A, document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT technical questions, contact: Pulse test; pulse width 300 s, duty cycle 2 %.b. Guaranteed by design, not subject to production testing.

5 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device (TJ = 25 C, unless otherwise noted)Parameter Symbol Test StaticDrain-Source Breakdown VoltageVDSVGS = 0 V, ID = - 250 A - 20 VVDS Temperature Coefficient VDS/TJID = - 250 A - 11mV/ CVGS(th) Temperature Coefficient VGS(th) Threshold VoltageVGS(th)

6 VDS = VGS, ID = - 250 A - 1 VGate-Source LeakageIGSSVDS = 0 V, VGS = 8 V 10 AVDS = 0 V, VGS = V 1 Zero Gate Voltage Drain CurrentIDSSVDS = - 20 V, VGS = 0 V - 1 VDS = - 20 V, VGS = 0 V, TJ = 85 C - 10On-State Drain CurrentaID(on) VDS = - 5 V, VGS = - V- 8 ADrain-Source On-State ResistanceaRDS(on) VGS = - V, ID = - A VGS = - V, ID = - 1 A = - V, ID = - 1 A = - V, ID = - A Transconductancegfs VDS = - 10 V, ID = - A 10 SDynamicbInput CapacitanceCiss VDS = - 10 V, VGS = 0 V, f = 1 MHz965pFOutput CapacitanceCoss 110 Reverse Transfer CapacitanceCrss 101 Total Gate ChargeQg VDS = - 10 V, VGS = - 8 V, ID = - = - 10 V, VGS = - V, ID = - ChargeQgs ChargeQgd ResistanceRgf = 1 Tu r n - O n D e l a y T i m etd(on) VDD = - 10 V, RL = ID - A, VGEN = - V, Rg = 1 2436nsRise Timetr1726 Turn-Off Delay Timetd(off)

7 95145 Fall Timetf2842Tu r n - O n D e l a y T i m etd(on) VDD = - 10 V, RL = ID = - A, VGEN = - 8 V, Rg = 1 510nsRise Timetr816 Turn-Off Delay Timetd(off) 115173 Fall Timetf2639 Drain-Source Body Diode CharacteristicsPulse Diode Forward CurrentaISM- 8 ABody Diode VoltageVSDIS = - A- Diode Reverse Recovery TimetrrIF = - A, dI/dt = 100 A/ s1624nsBody Diode Reverse Recovery ChargeQrr714nCReverse Recovery Fall Timeta9nsReverse Recovery Rise Timetb7 vishay SiliconixSi1077 XDocument Number: 63254S12-3081-Rev. A, document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT technical questions, contact: CHARACTERISTICS (TA = 25 C, unless otherwise noted)Gate Current vs.

8 Gate-Source VoltageOutput CharacteristicsOn-Resistance vs. Drain 0 3 6 9 12 IGSS - Gate Current (mA) VGS - Gate-Source Voltage (V) TJ = 25 C 0 2 4 6 8 0 1 2 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) VGS = 5 V thru V VGS = 1V VGS = V VGS = V 0 0 2 4 6 8 RDS(on) - On-Resistance ( ) ID - Drain Current (A) VGS = V VGS = V VGS = V VGS = V Gate Current vs.

9 Gate-to-Source VoltageTransfer Characteristics Curves vs. TemperatureCapacitance10-410-510-610-710 -810-910-100 4 8 12 16 IGSS - Gate Current (A) VGS - Gate-to-Source Voltage (V) TJ = 150 C TJ = 25 C 0 1 2 0 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 25 C TC = 125 C TC = - 55 C 0 380 760 1140 1520 0 5 10 15 20 C - Capacitance (pF) VDS - Drain-to-Source Voltage (V) Ciss Coss Crss vishay SiliconixSi1077 XDocument Number.

10 63254S12-3081-Rev. A, document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT technical questions, contact: CHARACTERISTICS (TA = 25 C, unless otherwise noted)Gate ChargeSource-Drain Diode Forward VoltageThreshold Voltage0 2 4 6 8 0 6 12 18 24 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 16 V VDS = 10 V VDS = 5 V ID = A 1 10 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 150 C TJ = 25 C - 50 - 25 0 25 50 75 100 125 150 VGS(th) (V) TJ - Temperature ( C)


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