P-Channel 40 V (D-S) MOSFET - Vishay

1 Siliconix S11-1661-Rev. A, 15-Aug-111 Document Number: 63354 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 40 V (D-S) MOSFETFEATURES TrenchFET power MOSFET 100 % Rg and UIS tested Material categorization: for definitions of compliance please see Load switch Motor drivesNotesa. Surface mounted on 1" x 1" FR4 boardb. t = 10 sc. Maximum under steady state conditions is 70 C/Wd. Package limitede. See solder profile ( ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnectionf.

2 Rework conditions: manual soldering with a soldering iron is not recommended for leadless componentsPRODUCT SUMMARYVDS (V)-40 RDS(on) max. ( ) at VGS = -10 V (on) max. ( ) at VGS = V typ. (nC) (A)-46 ConfigurationSinglePowerPAK SO-8 SingleTop mmBottom View4G3S2S1SD8D6D7D5 SGDP- channel MOSFETORDERING INFORMATIONP ackagePowerPAK SO-8 Lead (Pb)-free and halogen-freeSi7463 ADP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS-40 VGate-source voltage VGS 20 Continuous drain current (TJ = 150 C)

3 TC = 25 CID-46 ATC = 70 C-37TA = 25 a, bTA = 70 a, bPulsed drain current (t = 300 s) IDM-70 Continuous source-drain diode currentTC = 25 CIS-35 dTA = 25 a, bAvalanche currentL = mHIAS-30 Single-pulse avalanche energyEAS45mJMaximum power dissipationTC = 25 CPD39 WTC = 70 C25TA = 25 C5 a, bTA = 70 a, bOperating junction and storage temperature range TJ, Tstg-55 to +150 CSoldering recommendations (peak temperature) e, f260 THERMAL RESISTANCE RATINGSPARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient a, ct 10 sRthJA2025 C/WMaximum junction-to-caseSteady state Siliconix S11-1661-Rev.

4 A, 15-Aug-112 Document Number: 63354 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Pulse test; pulse width 300 s, duty cycle 2 %b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device (TJ = 25 C, unless otherwise noted)PARAMETER SYMBOL TEST CONDITIONS MIN.

5 StaticDrain-source breakdown voltageVDSVGS = 0, ID = -250 A -40--VVDS temperature coefficient VDS/TJID = -250 A --33 -mV/ CVGS(th) temperature coefficient VGS(th)/TJ-5 -Gate-source threshold voltageVGS(th) VDS = VGS, ID = -250 A leakageIGSSVDS = 0 V, VGS = 20 V -- 100nAZero gate voltage drain currentIDSSVDS = -40 V, VGS = 0 V ---1 AVDS = -40 V, VGS = 0 V, TJ = 55 C ---5On-state drain current aID(on) VDS -10 V, VGS = -10 V-30--ADrain-source on-state resistance aRDS(on) VGS = -10 V, ID = -15 A VGS = V, ID = -10 A transconductance agfs VDS = -10 V, ID = -15 A -40-SDynamic bInput capacitanceCiss VDS = -20 V, VGS = 0 V, f = 1 MHz-4150-pFOutput capacitanceCoss -436-Reverse transfer capacitanceCrss -400-Total gate chargeQg VDS = -20 V, VGS = -10 V, ID = -10 A-96144nCVDS = -20 V, VGS = V, ID = -10 chargeQgs -11 -Gate-drain chargeQgd resistanceRgf = 1 Turn-on delay timetd(on) VDD = -20 V, RL = 2 ID -10 A, VGEN = -10 V, Rg = 1 -1530nsRise timetr-1428 Turn-off delay timetd(off) -56110 Fall timetf-1122 Turn-on delay timetd(on)

6 VDD = -20 V, RL = 2 ID -10 A, VGEN = V, Rg = 1 -60110 Rise timetr-56110 Turn-off delay timetd(off) -50100 Fall timetf-2240 Drain-Source Body Diode CharacteristicsContinuous source-drain diode currentISTC = 25 C---50 APulse diode forward currentISM---70 Body diode VoltageVSDIS = -3 A, VGS = diode reverse recovery timetrrIF = -10 A, di/dt = 100 A/ s,TJ = 25 C-2955nsBody diode reverse recovery chargeQrr-2546nCReverse recovery fall timeta-16 -nsReverse recovery rise timetb-13 Siliconix S11-1661-Rev. A, 15-Aug-113 Document Number: 63354 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (25 C, unless otherwise noted)Output CharacteristicsOn-Resistance vs.

7 Drain CurrentGate ChargeTransfer CharacteristicsCapacitanceOn-Resistance vs. Junction Temperature0 14 28 42 56 70 ID- Drain Current (A)VDS-Drain-to-Source Voltage (V)VGS= 10 V thru 4 VVGS= 2 VVGS= 3 0 14 28 42 56 70 RDS(on)-On-Resistance ( )ID- Drain Current (A)VGS= VVGS= 10 V0 2 4 6 8 10 0 20 40 60 80 100 VGS-Gate-to-Source Voltage (V)Qg-Total Gate Charge (nC)VDS= 20 VVDS= 30 VVDS= 10 VID= 10 A0 2 4 6 8 10 0 1 2 3 4 5 ID- Drain Current (A)VGS-Gate-to-Source Voltage (V)

8 TC= 25 CTC= 125 CTC= - 55 C0 1300 2600 3900 5200 6500 0 8 16 24 32 40 C - Capacitance (pF)VDS-Drain-to-Source Voltage (V) -50-250 255075100125150 RDS(on)-On-Resistance (Normalized)TJ- Junction Temperature ( C)ID= 10 AVGS= 10 VVGS= Siliconix S11-1661-Rev. A, 15-Aug-114 Document Number: 63354 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (25 C, unless otherwise noted) Source-Drain Diode Forward VoltageThreshold VoltageOn-Resistance vs. Gate-to-Source VoltageSingle Pulse Power, Junction-to-AmbientSafe Operating IS-Source Current (A)VSD-Source-to-Drain Voltage (V)TJ= 150 CTJ= 25 255075100125150 VGS(th)- Variance (V)TJ-Temperature ( C)ID= 250 AID= 5 0246810 RDS(on)-On-Resistance ( )VGS-Gate-to-Source Voltage (V)TJ= 125 CTJ= 25 CID= 15 A0 40 80 120 160 200 (W)Time (s) Drain Current (A)VDS-Drain-to-Source Voltage (V)* VGS> minimum VGSat which RDS(on)is specified100 msLimited by RDS(on)*1 msIDML imitedTC= 25 CSingle PulseBVDSS Limited10 ms10 s1 Siliconix S11-1661-Rev.

9 A, 15-Aug-115 Document Number: 63354 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (25 C, unless otherwise noted)Current Derating aPower, Junction-to-CasePower Derating, Junction-to-AmbientNotea. The power dissipation PD is based on TJ max. = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit0 10 20 30 40 50 0 25 50 75 100 125 150 ID- Drain Current (A)TC-Case Temperature ( C)010203040500 255075100125150 Power (W)TC-Case Temperature ( C) (W)TA- Ambient Temperature ( C) Siliconix S11-1661-Rev.

10 A, 15-Aug-116 Document Number: 63354 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (25 C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-AmbientNormalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite for all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see Effective TransientThermal ImpedanceSquare Wave Pulse Duration (s)Duty Cycle = Pulset1t2 Notes:PDM1.