Rad Hard eGaN® 40V, 30A, 6mΩ Surface Mount (FSMD- B)

1 FBG04N30B. Rad Hard eGaN 40V, 30A, 6m Surface Mount ( fsmd -B). Features Description Low RDS(on) Freebird Semiconductor fsmd -B series of eGaN . Ultra Low QG For High Efficiency power switching HEMTs have been specifically designed Logic Level for critical applications in the high reliability or Light Weight grams commercial satellite space environments. These devices New Compact Hermetic Package have exceptionally high electron mobility and a low Source Sense Pin temperature coefficient resulting in very low RDS(on). Total Dose values. The lateral structure of the die provides for very - Rated to 300kRad low gate charge (QG) and extremely fast switching times. Single Event These features enable faster power supply switching - SEE immunity for LET of 90 Mev/mg/cm 2 frequencies resulting in higher power densities, higher With VDS up to 100% of rated Breakdown efficiencies and more compact packaging. Low Dose Rate at 100 mRad/sec - Maintains Pre-Rad specification Application Neutron Commercial Satellite EPS & Avionics - Maintains Pre-Rad specification for Deep Space Probes up to 1 x 1013 Neutrons/cm2 High Speed Rad Hard DC-DC Conversion Rad Hard Motor Controllers Absolute Maximum Rating TC =25 oC unless otherwise noted Symbol Parameter-Conditions Value Units VDS Drain to Source Voltage (Note 1) 40 V.

2 ID Continuous Drain Current ID @ VGS= , TC= 25 oC, R JA<35 oC/W 30. A. IDM Pulsed Drain Current tpulse = 80 s 100. VGS Gate to Source Voltage (Note 2) 5 V. TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 oC. Tsol Package Mounting Surface Temperature 260 oC. ESD ESD class level 1A. Thermal Characteristics Symbol Parameter-Conditions Value Units R JA Thermal Resistance Junction to Ambient (Note 3) 35. Thermal Resistance Junction to Case oC/W. R JC. R JL Thermal Resistance Junction to Lead - Pinning Assignment (Bottom View). Pin Symbol Description Visual Outline Physical device 1 G Gate 2 D Drain 3 S Source 4 SS Source Sense FBG04N30B Rev Q2 1 March 24, 2016. FBG04N30B. Electrical Characteristics TC =25 oC unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS. Drain to Source Breakdown Voltage BVDSS ID =300 A VG= 0V 40 - - V. Tc= 25 oC. VDS = 32V - 26 400. Drain to Source Leakage IDSS A.

3 VGS = 0V Tc= 125 oC - 1000. Gate to Source Forward Leakage IGSS VGS = 5V Tc= 25 oC - 7 mA. Gate to Source Reverse Leakage IGSS VGS = -5V Tc= 25 oC -50 -400 A. oC. Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 9mA Tc= 25 V. Gate to Source Threshold Voltage VGS(th) / T VDS = VGS, ID = 5mA -55 oC < TA < 150 oC - | | - V / C. Temperature Coefficient ID = 30A VGS = Tc= 25 oC - Drain to Source Resistance (Note 4) RDS( ) oC. m . ID = 30A VGS = Tc= 25 - 6. Source to Drain Forward Voltage VSD IS = 5A VG = 0V Tc= 25 oC V. Dynamic Characteristics TC =25 oC unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS. Input Capacitance CISS 1100 1300 pF. Output Capacitance COSS f = 1 MHz, VDS = 20V, VGS=0V (Note 5) 650 800 pF. Reverse transfer Capacitance CRSS 30 40 pF. Gate Resistance RG f = 1 MHz, VDS = VGS =0 V . ID =15 A, VGS = 5V, VDS =20V Total Gate Charge (Note 6) QG nC. ID =30 A, VGS = 5V, VDS =20V ID =15 A, VGS = 5V, VDS =20V Gate to Drain Charge (Note 6) QGD nC.

4 ID =30 A, VGS = 5V, VDS =20V ID =15 A, VGS = 5V, VDS =20V Gate to Source Charge (Note 6) QGS nC. ID =30 A, VGS = 5V, VDS =20V Output Charge (Note 7) QOSS VGS = 0V, VDS =20V 22 26 nC. Source to Drain Recovery Charge QRR VGS = 0V, VDS =20V 1 nC. 2016 Freebird Semiconductor Corporation Page 2 of 13 FBG04N30B. Radiation Characteristics Freebird Semiconductor eGaN HEMTs are tested according to MIL-STD-750 Method 1019 for total ionizing dose validation. Every manufacturing lot is tested for total ionizing with an in situ Gamma Bias for (i) VGS = 5V, (ii). VDS=VGS=0V and (iii) VDS=80% BVDSS. Electrical Characteristics up to 300 kRads TC =25 oC unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS. Drain to Source Breakdown Voltage BVDSS ID =300 A VG= 0V 40 - - V. Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 9mA V. Drain to Source Leakage IDSS VDS = 32V , VGS = 0V - 26 400 A.

5 Gate to Source Forward Leakage IGSS VGS = 5V - 7 mA. Gate to Source Reverse Leakage IGSS VGS = -5V - -50 -400 A. Drain to Source Resistance (Note 4) RDS( ) ID = 30A, VGS = - m . Typical Single Event Effect Safe Operating Area TEST ENVIRONMENT VDS Voltage ( V). LET Range Energy Ion VGS = 0 V VGS = -4V. SEE. Mev/mg/cm2 m MeV. SOA Xe 50 131 1653 40 40. Au 130 2482 40 40. 45. 40. 35. 30. Vds bias (V). 25. Xe 20. 15 Au 10. 5. 0. 0 -1 -2 -3 -4 Vgs Bias (V). Fig 1. Typical Single Event Effect Safe Operating Area 2016 Freebird Semiconductor Corporation Page 3 of 13 FBG04N30B. Figure 1. Figure 2. Typical Drain-Source Leakage Current Typical Gate-Source Leakage Current Vs Ambient Temperature vs Ambient Temperature Figure 3. Figure 4. Typical Gate-Drain Transfer Characteristic (VDS = 3V) Typical Output Characteristics 2016 Freebird Semiconductor Corporation Page 4 of 13 FBG04N30B. ID = 15A. Figure 5. Figure 6.

6 Typical Drain-Source ON Resistance Typical Drain-Source ON Resistance vs Gate-Source Voltage vs Ambient Temperature vs Gate-Source Voltage vs Drain Current Figure 7. Figure 8. Typical Source-Drain Voltage vs Temperature Typical Normalized Drain-Source ON Resistance vs Ambient Temperature 2016 Freebird Semiconductor Corporation Page 5 of 13 FBG04N30B. Figure 9. Figure 10. Typical Inter-Electrode Capacitance Typical Gate Charge vs Drain Current vs Drain-Source Voltage VDD = 50V. BT1. +. P1 Qs (Same as DUT) ID(max). 10k C1. 9V ID. 1:N. V(ID). 5V Rs 5V. 10 . ICONST. VGS Vplateau VGG. + DUT VGS(th). V. GS GS. ton - toff QGS QGD charge/time QGT. Figure 11. Figure 12. Charge Test Circuit Typical Gate Charge Test Waveform 2016 Freebird Semiconductor Corporation Page 6 of 13 FBG04N30B. THERMAL CHARACTERISTICS. 2016 Freebird Semiconductor Corporation Page 7 of 13 FBG04N30B. PACKAGE OUTLINE AND DIMENSIONS.

7 Inches Millimeters Symbol Note Min Max Min Max A B C D F G H J K L M N Ref. only P fsmd -B FOOTPRINT FOR PRINTED CIRCUIT BOARD DESIGN. Inches Millimeters Symbol Note Min Max Min Max A B C D E F G H J 2016 Freebird Semiconductor Corporation Page 8 of 13 FBG04N30B. NOTE: Note 1. NEVER exceed the absolute maximum VDS of the device otherwise permanent damage/destruction may result. Note 2. NEVER exceed the absolute maximum VGS of the device otherwise permanent damage/destruction may result. Note 3. R JA measured with fsmd -B package mounted to double-sided PCB, thickness with square inches of copper area on the top (mounting side) and a flood etch (3 square inches) on the bottom side. Note 4. Measured using four wire (Kelvin) sensing and pulse measurement techniques. Measurement pulse width is 80 s and duty cycle is 1%, maximum. Note 5. Ciss = CGS + CGD with CDS shorted. Coss = CDS + CGD. Crss = CGD. Note 6.

8 The gate charge parameters are measured using the circuit shown in Figure 11. Qs and associated components BT1, P1 and C1 form a high speed current source that serves as the test load for the DUT. A constant current load (Iconst) of is provided to the Gate of the DUT. during the time that the ground switch GS is OFF (toff). The DUT is switched ON and ON using ground-sensed switch GS. The gate current is adjusted to yield the desired charge per unit time (Iconst * time per division) on the measuring oscilloscope. The GS pulse drive ON time (ton)is adjusted for the desired observability of the gate-source voltage (VGS) waveform. The maximum duty cycle of the ground switch (toff/ton) should be set to 1% maximum. Please note that all gate-related signals are referenced to the Source Sense pin on the package. At all times during the measurement, the maximum gate-source voltage is clamped to 5 Vdc. Note 7.

9 Guaranteed by design/device construction. Not tested. 2016 Freebird Semiconductor Corporation Page 9 of 13 FBG04N30B. Freebird Semiconductor Part Number Information FB G 04 N 30 B 1 C F. Freebird Semiconductor Radiation Level Material Technology Screening Level Voltage Rating Lead and Form Option Polarity Package Option Current Rating Ordering Information Availability Lead Form Rad Assurance Options Screening Options Options 1 character 1 character 1 character 1 = with stand-off pads C = COTS F = 300kRad 2 = without stand-off pads V = Extended Screen G = 500kRad S = Space Level H = 1000kRad PART NUMBER/BRAND SCREENING LEVEL SHIPPING. FBG04N30B*C Engineering Samples (COT). FBG04N30B*V Extended Screening T - Trays FBG04N30B*S Space Level Note- * STAND-OFF PAD OPTIONS IN PART NOMENCLATURE.. Screening and qualification consistent to an equivalent MIL-PRF-19500 specification. COTS version fsmd -B units are intended for engineering development purposes only and NOT supplied with radiation performance guarantees nor supplemental data packages 2016 Freebird Semiconductor Corporation Page 10 of 13 FBG04N30B.

10 Data Package Order Detail Consistent to MIL-PRF-19500 general specification Extended Visual SPACE Screen . 1. FBG04N30BV - STANDARD DATA PACKAGE 1. FBG04N30BS - STANDARD DATA PACKAGE. A. Certificate of Compliance A. Certificate of Compliance B. Assembly Flow Chart B. Serialization Records C. Preconditioning - Attributes Data Sheet C. Assembly Flow Chart D. Group A - Attributes Data Sheet D. Preconditioning - Attributes Data Sheet - HTRB - Hi Temp Gate Stress E. Group B - Attributes Data Sheet Post Reverse Bias Data and F. Group C - Attributes Data Sheet Delta Data G. Group D - Attributes Data Sheet - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data E. Group A - Attributes Data Sheet 2. FBG04N30BV- OPTIONAL DATA PACKAGE. F. Group B - Attributes Data Sheet A. Certificate of Compliance G. Group C - Attributes Data Sheet B. Assembly Flow Chart H. Group D - Attributes Data Sheet C. Preconditioning - Attributes Data Sheet - Pre and Post Burn-In Read and Record Data 2.