Transcription of Rectifi er Diode VRRM = 1200-1800 V Avalanche …
1 DS 75 DSI 75. DSA 75 DSAI 75. Rectifier Diode VRRM = 1200-1800 V. Avalanche Diode IF(RMS) = 160 A. IF(AV)M = 110 A. DO-203 AB. VRSM V(BR)min VRRM Anode Cathode V V V on stud on stud C A. DS DSI. 1300 - 1200 DS 75-12B DSI 75-12B DSA DSAI. A C. 1300 1300 1200 DSA 75-12B DSAI 75-12B. 1700 1760 1600 DSA 75-16B DSAI 75-16B. 1900 1950 1800 DSA 75-18B DSAI 75-18B. 1/4-28 UNF. Only for Avalanche Diodes A = Anode C = Cathode Symbol Test Conditions Maximum Ratings Features . International standard package, IF(RMS) TVJ = TVJM 160 A. JEDEC DO-203 AB (DO-5).
2 IF(AV)M Tcase = 100 C; 180 sine 110 A . Planar glassivated chips PRSM DSA(I) types, TVJ = TVJM, tp = 10 s 20 kW. Applications IFSM TVJ = 45 C; t = 10 ms (50 Hz), sine 1400 A . High power rectifiers VR = 0 t = ms (60 Hz), sine 1500 A . Field supply for DC motors TVJ = TVJM t = 10 ms (50 Hz), sine 1250 A . Power supplies VR = 0 t = ms (60 Hz), sine 1310 A. Advantages I2t TVJ = 45 C t = 10 ms (50 Hz), sine 9800 A2s . Space and weight savings VR = 0 t = ms (60 Hz), sine 9450 A2s . Simple mounting TVJ = TVJM t = 10 ms (50 Hz), sine 7820 A2s.
3 Improved temperature and power VR = 0 t = ms (60 Hz), sine 7210 A2s cycling . Reduced protection circuits TVJ +180 C. TVJM 180 C. Tstg +180 C. Md Mounting torque Nm 21-40 Dimensions in mm (1 mm = "). Weight 21 g Symbol Test Conditions Characteristic Values IR TVJ = TVJM; VR = VRRM 6 mA. VF IF = 150 A; TVJ = 25 C V. VT0 For power-loss calculations only V. rT TVJ = TVJM 2 m . RthJC DC current K/W. RthJH DC current K/W. dS Creepage distance on surface mm dA Strike distance through air mm a Max. allowable acceleration 100 m/s2. Data according to IEC 60747.
4 IXYS reserves the right to change limits, test conditions and dimensions 20170323b 2017 IXYS All rights reserved 1-2. DS 75 DSI 75. DSA 75 DSAI 75. 200 1500 1045. 10. typ. lim. 50Hz, 80%VRRM VR = 0 V. A A A2s TVJ = 45 C. IFSM 6. IF 150. TVJ = 45 C I2t TVJ = 180 C. 1000. TVJ= 180 C. 4. TVJ= 25 C. 100. 500 TVJ = 180 C. 2. 50. 3. 0 0 10. 104. V 10-3 -2. 10 10 -1 s 0. 10 1 2 3 8 910. 4 5 6 7 ms VF t t Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I2t versus time (1-10 ms). IFSM: crest value, t: duration 200 200. W A.
5 RthJA : IF(AV)M. DC. 150 1 K/W 150 180 sin PF K/W 120 . K/W 60 . 30 . 2 K/W. 100 3 K/W 100. 4 K/W. DC. 50 180 sin 50. 120 . 60 . 30 . 0 0. 0 50 100 150 A 00. 200 50 100 150 C 200 0 40 80 120 160 C 200. IF(AV)M Tamb Tcase Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case temperature K/W 30 RthJH for various conduction angles d: 60 . 120 . ZthJH 180 d RthJH (K/W). DC. DC 180 120 60 30 Constants for ZthJH calculation: i Rthi (K/W) ti (s). 1 2 10-3 10-2 10-1 100 101 102 s 103 3 t 4 Fig.
6 6 Transient thermal impedance junction to heatsink 20170323b 2017 IXYS All rights reserved 2-2.
