三菱シリコンRFデバイス - mitsubishielectric.co.jp

1 RF . R F . MHz 1 GHz . TELEMATICS .. MOSFET 1 3. RF FET . MOS FET 1 3~4.. MOS FET 1 3.. IC MOS FET 2 5.. MOS FET 2 5.. MOS FET 2 5~6.. MOS FET . 10 30 135 175 300 520 700 900 1 GHz 100 RD100 HHF1C 100.. RD70 HUP2. RD70 HVF1C RD60 HUF1C. [W]. 50 50.. RD35 HUP2.. RD12 MVP1/RD12 MVS1. RD15 HVF1. RD16 HHF1 RD10 MMS2. 10 10. RD08 MUS2. RD09 MUP2 RD05 MMP1. RD06 HHF1 RD07 MUS2B RD02 LUS2. 5 5. RD06 HVF1. RD02 MUS2 RD04 LUS2 RD04 HMS2. RD01 MUS2. RD01 MUS2B/RD01 MUS3. 10 30 135 175 300 520 700 900 1 GHz [M H z]. 1.. MOS FET . 68 88 135 175 210 270 330 520 806 870 889 941.. 80 RA80H1415M1 80.. RA60H3340M1A/3847M1/.. RA60H1317M1A/1317M1B 3847M1A/4452M1/4452M1A. 60 60.. [W]. RA33H1516M1. RA30H3340M1/3847M1/3847M1A. RA30H1317M1/1317M1A 4452M1/4452M1A. 30 30. RA30H0608M1 RA30H2127M1 .. 10 RA08H1317M 10. RA08N1317M RA07H4047M/4452M. RA07N4047M/4452M.

2 RA07M1317M. RA07M3847M/4452M. RA03M8087M RA03M8894M. 68 88 135 175 210 270 330 520 806 870 889 941. [M H z].. 2.. MOS FET . Frequency Po (Typ.) d (Typ.) Package Type Number Structure Vdd [V] Pin [W]. VDSS [V] Pch [W] Band [W] [%] Type . RD02 LUS2 Si, MOS 25 UHF 70 SOT-89.. RD04 LUS2 Si, MOS 25 UHF 65 SLP. Ta=25 . MOS FET . Frequency Po (Typ.) d (Typ.) Package Type Number Structure Vdd [V] Pin [W]. VDSS [V] Pch [W] Band [W] [%] Type RD01 MUS2 Si, MOS 40 UHF 65 SOT-89.. VHF 75.. RD01 MUS2B Si, MOS 25 UHF 70 SOT-89. 900 65. VHF 3 65. RD02 MUS2 Si, MOS 40 50 SLP. UHF 3 65. RD05 MMP1 Si, MOS 30 73 900 6 46 PMM. VHF 65.. RD07 MUS2B Si, MOS 30 50 UHF 8 63 SLP. 900 7 58.. RD08 MUS2 . Si, MOS 25 46 UHF 65 SLP. RD09 MUP2 Si, MOS 40 83 UHF 9 60 PMM. RD10 MMS2 Si, MOS 40 62 900 1 12 58 SLP.. RD12 MVP1 Si, MOS 50 125 VHF 12 57 PMM.. RD12 MVS1 Si, MOS 50 50 VHF 1 12 57 SLP.

3 Ta=25 . MOS FET . Frequency Po (Typ.) d (Typ.) Package Type Number Structure Vdd [V] Pin [W]. VDSS [V] Pch [W] Band [W] [%] Type VHF 73.. RD04 HMS2 Si, MOS 40 50 UHF 6 62 SLP. 900 5 58.. RD06 HHF1 Si, MOS 50 HF 10 65 TO-220S. RD06 HVF1 Si, MOS 50 VHF 10 65 TO-220S.. RD15 HVF1 Si, MOS 30 48 VHF 18 60 TO-220S.. RD16 HHF1 Si, MOS 50 HF 19 65 TO-220S. RD35 HUP2 Si, MOS 40 166 UHF 3 35 55 HPM005. RD60 HUF1C Si, MOS 30 150 UHF 10 65 55 Ceramic (Large). VHF 4 75 60. RD70 HVF1C Si, MOS 30 150 Ceramic (Large). UHF 10 55 55. VHF 4 84 74. RD70 HUP2 Si, MOS 40 300 HPM006. UHF 5 75 64. RD100 HHF1C Si, MOS 50 HF 7 110 60 Ceramic (Large). Ta=25 . 3. MOS FET FET . Frequency Po (Typ.) d (Typ.) Package Type Number Structure Vdd [V] Pin [W]. VDSS [V] Pch [W] Band [W] [%] Type . Si, MOS 25 UHF 60. RD01 MUS3 QFN (4mm).. Si, MOS 25 UHF 70. Ta=25.

4 SOT-89 SLP TO-220S PMM.. HPM006 Ceramic (Large) HPM005 QFN (4mm).. RF .. MOS FET . RD 07 M U S 2B. W V MHz .. L H 30 MHz S . M V 175 MHz F .. H U 520 MHz P . M 900 MHz MOS FET . RA 07 M 4452 M. W V MHz .. M 440 M MHz 4452. N 520 MHz G GHz H 135 . 1317. 175 MHz . 4.. MOS FET . f [MHz] Po (min) T (min) Package Type Number Vdd [V] Pin [W]. Vdd [V] min max [W] [%] Type . RA03M8087M 806 870 32*1 H46S. 1. RA03M8894M 889 941 32* H46S. 2. RA07M1317M 135 175 45* H46S. RA07M3847M 378 470 7 40*3 H46S. RA07M4452M 440 520 7 40*3 H46S. Ta=25 *1 Po= *2 Po=6W *3 Po= .. MOS FET . f [MHz] Po (min) T (min) Package Type Number Vdd [V] Pin [W]. Vdd [V] min max [W] [%] Type RA08N1317M 135 175 8 50*1 H46S. RA07N4047M 400 470 43*2 H46S. 2. RA07N4452M 440 520 43* H46S. Ta=25 *1 Po=8W *2 Po=7W .. H2M/H2M(A) H46S H57.. 5. MOS FET . f [MHz] Po (min) T (min) Package Type Number Vdd [V] Pin [W].

5 Vdd [V] min max [W] [%] Type . RA08H1317M 135 175 8 40*1 H46S. 2. RA07H4047M 400 470 7 40* H46S. 2. RA07H4452M 440 520 7 40* H46S. RA30H0608M1 17 66 88 30 40 H2M. RA30H1317M1 17 135 175 35 40 H2M. RA30H1317M1A* 17 136 174 30 45 H2M(A). RA30H2127M1 . 17 210 275 30 40 H2M.. RA30H3340M1 17 330 400 30 40 H2M. RA30H3847M1 17 378 470 30 42 H2M. RA30H3847M1A* 17 378 470 30 40 H2M(A). RA30H4452M1 17 440 520 30 42 H2M. RA30H4452M1A* 17 440 520 30 40 H2M(A). RA33H1516M1 17 154 164 33 50 H57. RA60H1317M1A 17 136 174 60 45 H2M.. RA60H1317M1B* 17 136 174 60 45 H2M(A). RA60H3340M1A 17 330 400 60 40 H2M(A). RA60H3847M1 17 378 470 60 40 H2M. RA60H3847M1A* 17 378 470 60 40 H2M(A). RA60H4452M1 17 440 520 60 40 H2M. RA60H4452M1A* 17 440 520 60 40 H2M(A). 144 148 80. RA80H1415M1 17 50 H2M. 136 174 60.. Ta=25 * V GG1 , V GG2 *1 Po=8W *2 Po=7W.

6 RF rohs 2011/65/EU . rohs Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment 6.. RD01 MUS2B RD04 LUS2 RD01 MUS3 RD04 LUS2.. 30mW 4W 1mW 4W. @440 520 MHz @440 520 MHz . RD01 MUS2B RD07 MUS2B RD01 MUS2B RD07 MUS2B.. 30mW 7W 50mW 5W. @135 175 MHz @806 870 MHz @440 520 MHz RD01 MUS2B RD08 MUS2. 50mW 8W. @440 520 MHz .. RD04 HMS2 RD70 HUP2 RD04 HMS2 RD35 HUP2. 70W 35W. @135 175 MHz @135 175 MHz @440 520 MHz @440 520 MHz RD15 HVF1 RD70 HVF1C. 50W. @135 175 MHz . RA RD .. RA RD .. RA RD MOS .. RA .. RA .. WEB 7.. SOT-89 TO-220S.. 9 . + + . + . Pin No. 5deg Pin No. MAX Gate Gate Source Source Drain Drain UNIT: mm UNIT: mm SLP PMM.. ( ).. ( ).. ( ) INDEX MARK . [Gate].. ( ) ( ) TOP VIEW SIDE VIEW BOTTOM VIEW. ( ). INDEX MARK. (Gate). DETAIL A. Standoff= Pin No. Pin No.. Drain [output]. Drain SIDE VIEW Source [GND].

7 Source Gate [input]. Gate Source UNIT: mm DETAIL A UNIT: mm ( ): reference value ( ): reference value Ceramic (Large) HPM005.. + 4 C2. ( ) ( ). ( ).. + * INDEX MARK (GATE). ( ). Pin No. Drain Source Gate Pin No. DRAIN. GATE UNIT: mm * UNIT: mm SOURCE (COMMON) ( ): reference value 8.. HPM006 QFN (4mm). INDEX MARK ( ).. X1'.. X1-X1' SECTION.. ( ). INDEX MARK INDEX MARK. X1. (GATE) (GATE) .. Pin No.. Pin No. DRAIN . Drain1. SOURCE (COMMON) . (Output1).. DRAIN SOURCE (COMMON) . Drain2 (Output2) Gate2 (Input2) . SOURCE (COMMON) Drain2 (Output2) Gate2 (Input2) GATE Drain2 (Output2) Gate2 (Input2) SOURCE (COMMON) Gate1 (Input1). GATE Source (GND) UNIT: mm SOURCE (COMMON) UNIT: mm ( ): reference value .. 9. H46S H57. ( ) 2- . ( ) ( ). 2 ( ).. 10 1. Pin No. RF Input(Pin). + Gate Voltage(VGG) Drain Voltage(VDD) Area "A" RF Output(Pout).

8 RF Ground(Fin). ( ). Pin No. ( ) RF Input(Pin). + Gate Voltage(VGG).. Drain Voltage(VDD). ( ). RF Output(Pout). ( ). RF Ground(Fin). ( ). ( ). + 0. UNIT: mm ( ): reference value UNIT: mm tolerance of no designation ; ( ): reference value H2M/H2M(A). 67 1. 2 R2 60 1. ( ). 1.. 1. 18 1. 1.. 4 15 1. 1 17 1. 44 1. + 56 1. ( ).. ( ). Pin No. [H2M] Pin No. [H2M(A)]. RF Input (P in) RF Input (P in)+VGG1. Gate Voltage(VGG) Final Stage Gate Voltage(VGG2). Drain Voltage(VDD) Drain Voltage(VDD). RF Output(Pout) RF Output(Pout) UNIT: mm RF Ground(Fin)) RF Ground(Fin) ( ): reference value . 10. RF . 100-8310 7 3 .. 2018 9 1 .. 7 3 . 03 5565-1511 03 5396-6224 . 048 614-8841 029 828-6993 03 3218-3239. 042 645-8531 045 264-7125 03 3218-3239. 045 474-1011 027 280-5515 . 0263 36-8011 0258 86-0190 03 3218-3736. 022 266-3800 022 217-5722 03 3218-3687.

9 03 6400-3619 03 3433-1227 03 3218-4880. 03 3481-2044 022 266-3118. 028 683-3011 03 5657-0144. 029 272-3911 045 474-3259. 027 327-4345 03 3219-1800. 025 281-1171 03 5789-1615. 022 232-7711 03 3704-2581. 011 642-6101 048 527-1620. 28 12 . 052 203-0277 052 204-8302 . 052 935-1619 0566 21-3222 052 565-3339. 052 332-3861 052 261-3211 052 565-3268. 052 211-1217 0568 75-2851 052 565-3269. 0565 37-8108 052 889-0032 052 565-3278. 054 286-2215 052 704-2121. 053 469-0576 053 450-3162. 0559 63-5190. 059 213-3133. 4 20 . A . 06 6455-5121 06 6763-6809 . 075 371-5751 06 6105-0449 06 6486-4500. 06 6539-2707 075 325-2211 06 6486-4508. 076 233-3505 06 6341-5081 06 6486-4509. 06 6343-9663 06 6454-8233 06 6486-4519. 06 4797-3956 06 6310-6115. 076 224-4102 082 243-9300. 079 287-2000. 082 227-5411. 084 923-6393. 087 885-3913. 12 1 . 092 474-4311 093 561-6483.

10 092 736-5759 092 473-7580 092 721-2146. HG-407M -1809 TOT 2018 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. 2018 9.