Small Signal Fast Switching Diodes - Vishay Intertechnology

1 LL4148, Semiconductors Rev. , 14-Jul-171 Document Number: 85557 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Signal fast Switching DiodesDESIGN SUPPORT TOOLS click logo to get startedMECHANICAL DATACase: MiniMELF (SOD-80)Weight: approx. 31 mgCathode band color: blackPackaging codes / options:GS18/10K per 13" reel (8 mm tape), 10K/boxGS08 per 7" reel (8 mm tape), Silicon epitaxial planar diode Electrical data identical with the devices 1N4148 and 1N4448 respectively AEC-Q101 qualified Material categorization: for definitions of compliance please see Extreme fast switchesNote(1)Valid provided that electrodes are kept at ambient temperature Note(1)Valid provided that electrodes are kept at ambient temperature AvailableModelsPARTS TABLEPARTTYPE DIFFERENTIATION ORDERING CODETYPE MARKINGCIRCUIT CONFIGURATIONREMARKSLL4148 VRRM = 100 V,VF = max.

2 1000 mV at IF = 50 mALL4148-GS08 or LL4148-GS18-SingleTape and reelLL4448 VRRM = 100 V,VF = max. 1000 mV at IF = 100 mALL4448-GS08 or LL4448-GS18-SingleTape and reelABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONSYMBOLVALUEUNITR epetitive peak reverse voltageVRRM100 VReverse voltageVR75 VPeak forward surge currenttp = 1 sIFSM2 ARepetitive peak forward currentIFRM500mAForward continuous currentIF300mAAverage forward currentVR = 0IF(AV)150mAPower dissipation (1)Ptot500mWTHERMAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONSYMBOLVALUEUNITT hermal resistance junction to ambient air (1)RthJA300K/WJunction temperatureTJ175 CStorage temperature rangeTstg-65 to +175 CLL4148, Semiconductors Rev. , 14-Jul-172 Document Number: 85557 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)Fig. 1 - Forward Current vs. Forward VoltageFig. 2 - Forward Current vs. Forward VoltageFig. 3 - Reverse Current vs. Reverse VoltageFig. 4 - diode Capacitance vs. Reverse VoltageELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST voltageIF = 5 = 50 = 100 currentVR = 20 VIR25nAVR = 20 V, Tj = 150 CIR50 AVR = 75 VIR5 ABreakdown voltageIR = 100 A, tp/T = ,tp = msV(BR)100 VDiode capacitanceVR = 0 V, f = 1 MHz,VHF = 50 mVCD4pFReverse recovery timeIF = IR = 10 mA,iR = 1 mAtrr8nsIF = 10 mA, VR = 6 V, iR = x IR, RL = 100 - Forward Current (mA)FVF- Forward Voltage (V) 9096LL4148 Scattering LimitTj= 25 C94 9097Tj=25 CLL4448 Scattering - Forward Current (mA)FVF- Forward Voltage (V) 10 100 1000 IR- Reverse Current (nA)VR- Reverse Voltage (V)

4 10 1 100 94 9098Tj = 25 CScattering - diode Capacitance (pF)10094 - Reverse Voltage (V)f = 1 MHzTj = 25 CLL4148, Semiconductors Rev. , 14-Jul-173 Document Number: 85557 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT DIMENSIONS in millimeters (inches): MiniMELF (SOD-80)Cathode ( ) max. ( ) ( ) ( ) ( )5 ( ) ( ) ( ) ( )Foot print recommendation:** The gap between plug and glass can be either on cathode or anode sideDocument no. 8 - Date: 12070 Legal Disclaimer Revision: 08-Feb-171 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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