SS8050 NPN Epitaxial Silicon Transistor - e-ele.net

1 SS8050 . SS8050 . 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8550. Collector Current: IC= Collector Power Dissipation: PC=2W (TC=25 C). 1 TO-92. 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V. VCEO Collector-Emitter Voltage 25 V. VEBO Emitter-Base Voltage 6 V. IC Collector Current A. PC Collector Power Dissipation 1 W. TJ Junction Temperature 150 C. TSTG Storage Temperature -65 ~ 150 C. Electrical Characteristics Ta=25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100 A, IE=0 40 V.

2 BVCEO Collector-Emitter Breakdown Voltage IC=2mA, IB=0 25 V. BVEBO Emitter-Base Breakdown Voltage IE=100 A, IC=0 6 V. ICBO Collector Cut-off Current VCB=35V, IE=0 100 nA. IEBO Emitter Cut-off Current VEB=6V, IC=0 100 nA. hFE1 DC Current Gain VCE=1V, IC=5mA 45. hFE2 VCE=1V, IC=100mA 85 300. hFE3 VCE=1V, IC=800mA 40. VCE (sat) Collector-Emitter Saturation Voltage IC=800mA, IB=80mA V. VBE (sat) Base-Emitter Saturation Voltage IC=800mA, IB=80mA V. VBE (on) Base-Emitter On Voltage VCE=1V, IC=10mA 1 V. Cob Output Capacitance VCB=10V, IE=0, f=1 MHz pF. fT Current Gain Bandwidth Product VCE=10V, IC=50mA 100 MHz hFE Classification Classification B C D. hFE2 85 ~ 160 120 ~ 200 160 ~ 300. 2004 Fairchild Semiconductor Corporation Rev.

3 B2, August 2004. SS8050 . Typical Characteristics 1000. VCE = 1V. IB = IC[mA], COLLECTOR CURRENT. hFE, DC CURRENT GAIN. IB = 100. IB = IB = 10. IB = IB = 1. 0 1 10 100 1000. VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT. Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE. 10000 100. IC = 10 IB VCE = 1V. IC[mA], COLLECTOR CURRENT. VBE(sat). 1000 10. 100 1. VCE(sat). 10 1 10 100 1000 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE. Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage Collector-Emitter Saturation Voltage 1000 1000. CURRENT GAIN BANDWIDTH PRODUCT. IE = 0 VCE = 10V. f = 1 MHz Cob [pF], CAPACITANCE.

4 100 100. fT[MHz], 10 10. 1 1. 1 10 100 1 10 100 400. VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT. Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product 2004 Fairchild Semiconductor Corporation Rev. B2, August 2004. SS8050 . Package Dimensions TO-92. + + [ ] [ ]. ( ). + ( ). Dimensions in Millimeters 2002 Fairchild Semiconductor Corporation Rev. B2, August 2004. TRADEMARKS. The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FAST ISOPLANAR Power247 SuperFET . ActiveArray FASTr LittleFET PowerSaver SuperSOT -3. Bottomless FPS MICROCOUPLER PowerTrench SuperSOT -6.

5 CoolFET FRFET MicroFET QFET SuperSOT -8. CROSSVOLT GlobalOptoisolator MicroPak QS SyncFET . DOME GTO MICROWIRE QT Optoelectronics TinyLogic . EcoSPARK HiSeC MSX Quiet Series TINYOPTO . E2 CMOS I2C MSXPro RapidConfigure TruTranslation . EnSigna i-Lo OCX RapidConnect UHC . FACT ImpliedDisconnect OCXPro SerDes UltraFET . FACT Quiet Series OPTOLOGIC SILENT SWITCHER VCX . Across the board. Around the world. OPTOPLANAR SMART START . The Power Franchise PACMAN SPM . Programmable Active Droop POP Stealth . DISCLAIMER. FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY. PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY. LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.

6 NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY. FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT. DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR. CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.

7 Provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS. Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In This datasheet contains the design specifications for Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

8 Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. 2004 Fairchild Semiconductor Corporation Rev. I11.