tHE MUltIPREP™ SYStEM - Allied High Tech Products, Inc

1 UNEQUALLEDRESULTSIN ALL OF THESESAMPLEPREPARATIONAPPLICATIONSBACKSI DE POLISHING PRECISIONCROSS-SECTIONINGPRE-FIB THINNINGPARALLEL DELAYERINGTEM WEDGE/PLAN-VIEW POLISHINGtHEMUltIPREP SYStEMtHEMUltIPREPSYStEMtMThe MultiPrep SYStEM enables precise semiautomatic sample preparationof a wide range of materials for microscopic (optical, SEM, FIB, TEM, AFM,etc.) include parallel polishing, angle polishing, site-specific polishing orany combination thereof. It provides reproducible results by eliminatinginconsistencies between users, regardless of their micrometers (pitch and roll) allow precise sample tilt adjustments relativeto the abrasive plane. A rigid Z-indexing spindle maintains the predefinedgeometric orientation throughout the grinding/polishing process.

2 Digitalindicators enable quantifiable material removal, which can be monitored real-time, or preset for unattended operation. Variable speed rotation and oscillationmaximize use of the entire grinding/polishing disc and minimize load control expands its capability to handle a range of small(delicate) to large SYSTEMS ample holding fixtures areattached using a Cam-Lockingsystem, allowing quick, easyfixture removal for sampleinspection and exact re-positioning throughout thepolishing RISERThe Spindle Riser raises thesample without disturbing thesample position settings. It isused when replacing platens/abrasives, or removing fixtures forsample DIAL INDICATORThe Digital Dial Indicator displaysthe amount of material beingremoved from the sample (realtime during the polishingoperation) in ADJUSTMENTSM icrometer heads allow radial(left to right) and axial (front toback ) angle adjustments to thesample within a 5 range, CALIBRATIONThe spindle is calibratedperpendicular to the platen usingthe supplied calibration kit.

3 Thisensures a precise polishingplane when rotating a sample,which prevents CALIBRATIONThe parallel polishing fixture iscalibrated parallel to the platenusing the supplied calibration is essential for parallel andbackside polishing / ABRASIVECHANGESThe MultiPrep arm easilydisengages to swing away fromthe platen area when DISPLAY and TIMERThe LED displays the amount oftime elapsed during operation. Apreset time limit can be pro-grammed, automatically shuttingoff the machine when the time ROTATIONThe sample can be rotated 360 ,or limited to a back and forthrotation within a range of 30-330 . Rotation provides auniform abrasive pattern andprevents trails, smearing, anduneven abrasive functions have eight sample may be oscillatedacross the platen in an adjust-able range, utilizing the entireabrasive surface.

4 This functionhas six speed ADJUSTMENTKNOBThe Vertical Adjustment Knobcontrols the vertical position of thesample in 2-micron can be used to set a pre-definedamount of material to be removed,allowing unattended REDUCTIONA llows adjustable sample loadfrom 0-600 grams, in 100 MultiPrep is an excellent tool for precision cross-sectioning a wide varietyof materials. Applications that take advantage of its speed, precision, andaccuracy include failure analysis, yield analysis, quality control, and research& development. With feature size of certain samples becoming smaller, suchas in the electronics industry, it is critical to control the material removal rate toavoid polishing through the area of interest.

5 The MultiPrep provides consistentsample rotation, oscillation and load, assuring uniform material removal. Thedigital dial indicator allows the operator to observe how much material is beingremoved, in real time and in 1-micron increments. Many samples can beprepared unencapsulated on the MultiPrep, including IC die, electronicpackages, PCB s, electronic components and other material of the MultiPrep:oOperator can monitor the amount of material removed in real timeand in 1-micron increments (sub-micron removal requires timedpolishing).oPre-defined amounts of material removal allows unattended, site-specific , accurate angle adjustments correct misaligned paddles can fit into most SEM s withoutremounting the sample, which enables exact relocation to thepolishing plane if continued polishing is sample loading assures reproducible indexing spindle design ensures that the plane of polishis maintained throughout the entire polishing unencapsulated sample to the cross-sectioning paddle orsecure encapsulated sample in the mount holder.

6 Attachsample sample the desired amount of material with a descendingsequence of abrasives until the area of interest is CROSS-SECTIONINGT ypical Preparation Time: 10-20 minutesIC Die mounted oncross-sectioning paddleUnencapsulated electronicpackage mounted on paddlePrecision IC Cross-SectionLow profile paddle formicroscope viewingThe MultiPrep is an efficient tool for preparing materials for TEM observationin either wedge or plan-view format. Samples are reliably polished to electrontransparency, often eliminating the need for ion milling. Consistent samplerotation, oscillation and load provide uniform material removal and eliminateartifacts that can be associated with manual polishing.

7 The dial indicatormeasures the sample and allows the operator to monitor its thickness throughoutthe polishing process, decreasing preparation time by eliminating theguesswork associated with hand-held polishing tools. Only the sample makescontact with the abrasive during polishing, ensuring that the desired angle(wedge polishing) remains intact throughout the process. The wedgetechnique provides a large, electron-transparent area in one dimension, makingit ideal for semiconductors, and it allows simultaneous preparation of multipleinterfaces ( , thin films/super-conductors).Benefits of the MultiPrep:oRotation limit feature simulates the motions made when usinghand-held polishing tools, which diffuses stress to the sample andcan eliminate cracking or feature eliminates the need for tools and makessample mounting, monitoring and measuring quick and , low profile fixture fits easily in microscopes that have shortworking load adjustment kit reduces load on fragile samples,especially for final TEM fixture and grind the Pyrex using diamond lapping filmuntil it is parallel with the abrasive TEM fixture and wax/glue the polished surface of a cross-sectioned sample onto the the micrometer head, induce the desired angle (wedgepolishing)

8 Or leave parallel (plan-view polishing). the fixture and remove bulk material with a descendingseries of abrasives until the sample is less than 5 microns on sample thickness or material, ion milling may WEDGE/PLAN-VIEW POLISHINGP yrex insert is polished parallelto the abrasive surfaceSample mounted onto Pyrex andthinned to 200 micronsSample final polished toelectron transparencyTEM Image - No Ion MillingTypical Preparation Time: 45-90 minutesPARALLEL DELAYERINGThe MultiPrep is ideal for parallel polishing. The most common application isfor IC delayering, but it is also used to thin PCB s, substrates, compoundsemiconductor wafers, optics, geological specimens and other delayering of IC s is a useful technique for construction or failureanalysis.

9 The MultiPrep allows precise, semiautomatic polishing, eliminatingthe tedious function of finger polishing or hand-holding polishing polishing on the MultiPrep provides controlled material removal,and eliminates the risks associated with chemical deprocessing by keepingareas of interest below the polished surface of the MultiPrep:oUnattended, timed parallel polishing surface allows individual layersto be removed mounting surface applies uniform pressure across feature improves flatness across the sample surface,edge to lapped, low-profile fixture allows quick and easymicroscopic the parallel polishing fixture so the mounting surface isparallel with the the fixture and mount the sample using wax, tape or otherremovable a low-napped polishing cloth to a platen, secure onto theTechPrep and apply the appropriate abrasive the fixture and lower until the sample makes contact withthe desired polishing time and activate the observation will be necessary to determine polishingprogress.

10 Use timed increments to determine the appropriatepolishing process. Polishing times will vary depending onabrasive chosen, sample size, density or mounted on fixture(sample size: 14mm x 14mm)Sample making contactwith colloidal silicaMetal 3 in focus withMetal 4 forefront (500X)Metal 4 removed to exposeMetal 3 (1000X)Typical Preparation Time: 5-30 minutesBACKSIDE POLISHINGWhen thinning electronic devices for various analysis including SIMS, LSM,Backside Emission Microscopy, and related NIR techniques, it is important toachieve a flat, highly polished surface. The MultiPrep automatically indexessamples into the abrasive, eliminating the need to hand-hold polishing allows for unattended sample preparation, enabling the user to performother lab tasks simultaneously.