Thyristor High Voltage, Phase Control SCR, 70 A

1 VS-70 TPS12 PbF, VS-70 TPS16 PbF high voltage Semiconductors Revision: 10-Aug-20181 Document Number: 94391 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT high voltage , Phase Control SCR, 70 AFEATURES high surge capability high voltage input rectification Designed and qualified according to JEDEC -JESD47 Material categorization: for definitions of compliance please see AC switches high voltage input rectification (soft start) high current crow-bar Other Phase - Control circuits Designed to be used with vishay input diodes, switches, and output rectifiers which are available in identical package outlinesDESCRIPTIONThe high voltage series of silicon controlled rectifiers are specifically designed for high and medium power switching, and Phase Control CHARACTERISTICSIT(AV)70 AVDRM/VRRM1200 V, 1600 VIGT100 mATJ-40 C to +125 CPackageSuper TO-247 Circuit configurationSingle SCR(G)

2 32(A)1 (K)Super TO-247123 MAJOR RATINGS AND CHARACTERISTICSPARAMETER TEST CONDITIONSVALUESUNITSIT(AV)Sinusoidal waveform70 AIRMSLead current limitation75 VRRM/VDRMR ange1200 to 1600 VITSM1100 AVT100 A, TJ = 25 sdI/dt150A/ sTJ-40 to +125 CVOLTAGE RATINGSPART NUMBERVRRM/VDRM, MAXIMUMREPETITIVE PEAK AND OFF-STATE VOLTAGEVVRSM, MAXIMUMNON-REPETITIVE PEAKREVERSE VOLTAGEV IRRM/IDRMAT 125 CmAVS-70 TPS12 PbF1200130015VS-70 TPS16 PbF16001700VS-70 TPS12 PbF, VS-70 TPS16 PbF high voltage Semiconductors Revision: 10-Aug-20182 Document Number: 94391 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MAXIMUM RATINGSPARAMETER SYMBOLTEST CONDITIONS VALUES UNITSM aximum average on-state current IT(AV)TC = 82 C, 180 conduction half sine wave70 AMaximum continuous RMS on-state current as AC switchIT(RMS)Lead current limitation75 Maximum peak, one-cycle non-repetitive surge currentITSM10 ms sine pulse, rated VRRM appliedInitial TJ = TJ maximum93010 ms sine pulse, no voltage reapplied1100 Maximum I2t for fusingI2t10 ms sine pulse, rated VRRM applied4325A2s10 ms sine pulse, no voltage reapplied6115 Maximum I2 t for fusingI2 tt = ms to 10 ms, no voltage reapplied61 150A2 sLow level value of threshold voltageVT(TO)1TJ = 125 level value of threshold voltageVT(TO)

4 Level value of on-state slope high level value of on-state slope peak on-state voltageVTM100 A, TJ = 25 rate of rise of turned-on currentdI/dtTJ = 25 C150A/ sMaximum holding currentIHAnode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 C200mAMaximum latching currentILAnode supply = 6 V, resistive load, TJ = 25 C400 Maximum reverse and direct leakage current IRRM/IDRMTJ = 25 CVR = rated VRRM/VDRM (TJ = TJ max., linear to 80 % VDRM = Rg- k = open) = 125 C15 Maximum rate of rise of off-state voltagedV/dtTJ = 125 C500V/ sTRIGGERINGPARAMETER SYMBOLTEST CONDITIONSVALUES UNITSM aximum peak gate powerPGMT = 30 s10 WMaximum average gate powerPG(AV)

5 Peak gate peak negative gate voltage - VGM10 VMaximum required DC gate voltage to triggerVGTTJ = - 40 CAnode supply = 6 V resistive = 25 = 125 required DC gate current to triggerIGTTJ = - 40 CAnode supply = 6 V resistive load150mATJ = 25 C100TJ = 125 C80 Maximum DC gate voltage not to triggerVGDTJ = 125 C, VDRM = rated DC gate current not to triggerIGD6mAVS-70 TPS12 PbF, VS-70 TPS16 PbF high voltage Semiconductors Revision: 10-Aug-20183 Document Number: 94391 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Fig.

6 1 - Current Rating CharacteristicsFig. 2 - Current Rating CharacteristicsTHERMAL AND MECHANICAL SPECIFICATIONSPARAMETER SYMBOLTEST CONDITIONS VALUESUNITSM aximum junction temperature rangeTJ-40 to +125 CMaximum storage temperature rangeTStg-40 to +150 Maximum thermal resistance, junction to caseRthJCDC C/WMaximum thermal resistance, junction to ambientRthJA40 Typical thermal resistance, case to heatsinkRthCSMounting surface, smooth and torqueminimum6 (5)

7 Kgf cm(lbf in)maximum12 (10)Marking deviceCase style Super TO-24770 TPS1270 TPS16 RthJ-hs CONDUCTION PER JUNCTIONDEVICESINE HALF WAVE CONDUCTIONRECTANGULAR WAVE CONDUCTIONUNITS180 120 90 60 30 180 120 90 60 30 C/WAverage On-state Current (A)Maximum Allowable Case Temperature ( C)7080901001101201300 102030405060708030 60 90 120 180 Conduction AngleRthJC (DC) = C/WAverage On-state Current (A)Maximum Allowable Case Temperature ( C)607080901001101201300 102030405060708090DC30 60 90 120 180 Conduction PeriodRthJC (DC) = C/WVS-70 TPS12 PbF, VS-70 TPS16 PbF high voltage Semiconductors Revision: 10-Aug-20184 Document Number: 94391 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

8 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 3 - On-State Power Loss CharacteristicsFig. 4 - On-State Power Loss CharacteristicsFig. 5 - Maximum Non-Repetitive Surge CurrentFig. 6 - Maximum Non-Repetitive Surge CurrentFig. 7 - On-State voltage Drop CharacteristicsAverage On-state Current (A)Maximum Average On-state Power Loss (W)0204060801001201400 10203040506070 RMS LimitConduction Angle180 120 90 60 30 Tj = 125 CAverage On-state Current (A)Maximum Average On-state Power Loss (W)030609012015001530456075 RMS LimitConduction PeriodTj = 125 C180 120 90 60 30 DCPeak Half Sine Wave Forward Current (A)Number of Equal Amplitude Half CycleCurrent Pulses (N)

9 SeriesAt any rated load condition and withrated VRRM applied following TJ = 125 Cat 60 Hz sat 50 Hz 1 10 Peak Half Sine Wave Forward Current (A)Maximum non-repetitive surge currentversus pulse train TJ = 125 CNo voltage reappliedRated VRRM reappliedPulse Train Duration (s)500 Instantaneous On-state voltage (V)Instantaneous On-state Current (A) = 25 CTj = 125 CVS-70 TPS12 PbF, VS-70 TPS16 PbF high voltage Semiconductors Revision: 10-Aug-20185 Document Number: 94391 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

10 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 8 - Gate CharacteristicsFig. 9 - Thermal Impedance ZthJC CharacteristicsInstantaneous Gate Current (A)Instantaneous Gate voltage (V) 1 10 100 = 25 CTJ = - 40 CTJ = 125 CRectangular gate pulsea) Recommended load line forrated diF/dt: 20 V, 30 tr = s, tp > = 6 sb) Recommended load line for< = 30 % rated diF/dt: 20 V, 65 tr = 1 s, tp > = 6 s(a)(b)(1)(2)(4)(3)Frequency Limited by PG(AV)VGDIGD(1) PGM = 100 W, tp = 500 s(2) PGM = 50 W, tp = 1 ms(3) PGM = 20 W, tp = 25 ms(4) PGM = 10 W, tp = 5 msSquare Wave Pulse Duration (s)Transient Thermal Impedance ZthJC ( C/W) State Value(DC Operation)Single Pulse D = = = = = SeriesVS-70 TPS12 PbF, VS-70 TPS16 PbF high voltage Semiconductors Revision: 10-Aug-20186 Document Number: 94391 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.