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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, …

tip120 , tip121 , TIP122 . (NPN); tip125 , tip126 , TIP127 (PNP). Plastic Medium-Power Complementary Silicon Transistors Designed for general purpose amplifier and low speed switching DARLINGTON. applications. 5 AMPERE. Features COMPLEMENTARY SILICON. High DC Current Gain POWER TRANSISTORS. hFE = 2500 (Typ) @ IC. = Adc 60 80 100 VOLTS, 65 WATTS. Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 60 Vdc (Min) tip120 , tip125 MARKING. = 80 Vdc (Min) tip121 , tip126 DIAGRAM. = 100 Vdc (Min) TIP122 , TIP127. Low Collector Emitter Saturation Voltage 4. VCE(sat) = Vdc (Max) @ IC = Adc TO 220AB. = Vdc (Max) @ IC = Adc CASE 221A TIP12xG. STYLE 1 AYWW. Monolithic Construction with Built In Base Emitter Shunt Resistors Pb Free Packages are Available* STYLE 1: PIN 1.

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) www.onsemi.com 3 Figure 1. Darlington Circuit Schematic BASE EMITTER COLLECTOR ≈ 8.0 k ≈ 120

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Transcription of TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, …

1 tip120 , tip121 , TIP122 . (NPN); tip125 , tip126 , TIP127 (PNP). Plastic Medium-Power Complementary Silicon Transistors Designed for general purpose amplifier and low speed switching DARLINGTON. applications. 5 AMPERE. Features COMPLEMENTARY SILICON. High DC Current Gain POWER TRANSISTORS. hFE = 2500 (Typ) @ IC. = Adc 60 80 100 VOLTS, 65 WATTS. Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 60 Vdc (Min) tip120 , tip125 MARKING. = 80 Vdc (Min) tip121 , tip126 DIAGRAM. = 100 Vdc (Min) TIP122 , TIP127. Low Collector Emitter Saturation Voltage 4. VCE(sat) = Vdc (Max) @ IC = Adc TO 220AB. = Vdc (Max) @ IC = Adc CASE 221A TIP12xG. STYLE 1 AYWW. Monolithic Construction with Built In Base Emitter Shunt Resistors Pb Free Packages are Available* STYLE 1: PIN 1.

2 BASE. 1 2. COLLECTOR. 2 3. EMITTER. 3 4. COLLECTOR. TIP12x = Device Code x = 0, 1, 2, 5, 6, or 7. A = Assembly Location Y = Year WW = Work Week G = Pb Free Package ORDERING INFORMATION. See detailed ordering and shipping information on page 3 of this data sheet. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 9 tip120 /D. tip120 , tip121 , TIP122 (NPN); tip125 , tip126 , TIP127 (PNP). MAXIMUM RATINGS. tip120 , tip121 , TIP122 , Rating Symbol tip125 tip126 TIP127 Unit Collector Emitter Voltage VCEO 60 80 100 Vdc Collector Base Voltage VCB 60 80 100 Vdc Emitter Base Voltage VEB Vdc Collector Current Continuous IC Adc Peak Base Current IB 120 mAdc Total Power Dissipation @ TC = 25 C PD 65 W.

3 Derate above 25 C W/ C. Total Power Dissipation @ TA = 25 C PD W. Derate above 25 C W/ C. Unclamped Inductive Load Energy (Note 1) E 50 mJ. Operating and Storage Junction, Temperature Range TJ, Tstg 65 to + 150 C. THERMAL CHARACTERISTICS. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RqJC C/W. Thermal Resistance, Junction to Ambient RqJA C/W. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality . should not be assumed, damage may occur and reliability may be affected.. 1. IC = 1 A, L = 100 mH, = 10 Hz, VCC = 20 V, RBE = 100 W. ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted).

4 Characteristic Symbol Min Max Unit OFF CHARACTERISTICS. Collector Emitter Sustaining Voltage (Note 2) VCEO(sus) Vdc (IC = 100 mAdc, IB = 0) tip120 , tip125 60 . tip121 , tip126 80 . TIP122 , TIP127 100 . Collector Cutoff Current ICEO mAdc (VCE = 30 Vdc, IB = 0) tip120 , tip125 (VCE = 40 Vdc, IB = 0) tip121 , tip126 (VCE = 50 Vdc, IB = 0) TIP122 , TIP127 Collector Cutoff Current ICBO mAdc (VCB = 60 Vdc, IE = 0) tip120 , tip125 (VCB = 80 Vdc, IE = 0) tip121 , tip126 (VCB = 100 Vdc, IE = 0) TIP122 , TIP127 Emitter Cutoff Current (VBE = Vdc, IC = 0) IEBO mAdc ON CHARACTERISTICS (Note 2). DC Current Gain (IC = Adc, VCE = Vdc) hFE 1000 . (IC = Adc, VCE = Vdc) 1000 . Collector Emitter Saturation Voltage VCE(sat) Vdc (IC = Adc, IB = 12 mAdc) (IC = Adc, IB = 20 mAdc) Base Emitter On Voltage (IC = Adc, VCE = Vdc) VBE(on) Vdc DYNAMIC CHARACTERISTICS.

5 Small Signal Current Gain (IC = Adc, VCE = Vdc, f = MHz) hfe . Output Capacitance (VCB = 10 Vdc, IE = 0, f = MHz tip125 , tip126 , TIP127 Cob 300 pF. tip120 , tip121 , TIP122 200. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 2. tip120 , tip121 , TIP122 (NPN); tip125 , tip126 , TIP127 (PNP). COLLECTOR COLLECTOR. BASE BASE. k 120 k 120. EMITTER EMITTER. Figure 1. Darlington Circuit Schematic ORDERING INFORMATION. Device Package Shipping tip120 TO 220 50 Units / Rail TIP120G TO 220 50 Units / Rail (Pb Free).)

6 tip121 TO 220 50 Units / Rail TIP121G TO 220 50 Units / Rail (Pb Free). TIP122 TO 220 50 Units / Rail TIP122G TO 220 50 Units / Rail (Pb Free). tip125 TO 220 50 Units / Rail TIP125G TO 220 50 Units / Rail (Pb Free). tip126 TO 220 50 Units / Rail TIP126G TO 220 50 Units / Rail (Pb Free). TIP127 TO 220 50 Units / Rail TIP127G TO 220 50 Units / Rail (Pb Free). TA TC. 80. PD, POWER DISSIPATION (WATTS). 60. TC. 40. TA. 20. 0 0. 0 20 40 60 80 100 120 140 160. T, TEMPERATURE ( C). Figure 2. Power Derating 3. tip120 , tip121 , TIP122 (NPN); tip125 , tip126 , TIP127 (PNP). VCC ts PNP. RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS - 30 V NPN. D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA RC.

7 MSD6100 USED BELOW IB 100 mA SCOPE tf TUT t, TIME ( s). V2 RB . approx + V D1 k 120. 51 0. tr V1 VCC = 30 V. approx + V. IC/IB = 250. -12 V 25 ms for td and tr, D1 is disconnected IB1 = IB2. and V2 = 0 TJ = 25 C. tr, tf 10 ns For NPN test circuit reverse all polarities. td @ VBE(off) = 0. DUTY CYCLE = 10. IC, COLLECTOR CURRENT (AMP). Figure 3. Switching Times Test Circuit Figure 4. Switching Times r(t), TRANSIENT THERMAL RESISTANCE. D = (NORMALIZED). ZqJC(t) = r(t) RqJC P(pk). RqJC = C/W MAX. D CURVES APPLY FOR POWER. PULSE TRAIN SHOWN. t1. READ TIME AT t1 t2. TJ(pk) - TC = P(pk) ZqJC(t) DUTY CYCLE, D = t1/t2. SINGLE PULSE. 10 20 50 100 200 500 k t, TIME (ms). Figure 5. Thermal Response 4. tip120 , tip121 , TIP122 (NPN); tip125 , tip126 , TIP127 (PNP).

8 20 There are two limitations on the power handling ability of 10 100 ms a transistor: average junction temperature and second IC, COLLECTOR CURRENT (AMP). 500 ms breakdown. Safe operating area curves indicate IC VCE. limits of the transistor that must be observed for reliable dc TJ = 150 C operation, , the transistor must not be subjected to greater BONDING WIRE LIMITED dissipation than the curves indicate. THERMALLY LIMITED 1 ms The data of Figure 6 is based on TJ(pk) = 150 C; TC is @ TC = 25 C (SINGLE PULSE). SECOND BREAKDOWN LIMITED. 5 ms variable depending on conditions. Second breakdown pulse CURVES APPLY BELOW limits are valid for duty cycles to 10% provided TJ(pk). RATED VCEO < 150 C.

9 TJ(pk) may be calculated from the data in Figure 5. tip120 , tip125 At high case temperatures, thermal limitations will reduce tip121 , tip126 . TIP122 , TIP127. the power that can be handled to values less than the limitations imposed by second breakdown 10 20 30 50 70 100. VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS). Figure 6. Active Region Safe Operating Area 10,000 300. 5000 TJ = 25 C. h fe , SMALL-SIGNAL CURRENT GAIN. 3000 200. 2000. C, CAPACITANCE (pF). 1000. 500 Cob TC = 25 C 100. 300 VCE = Vdc 200. IC = Adc 100 70 Cib 50 50 PNP. 30 PNP. 20 NPN. NPN. 10 30. 10 20 50 100 200 500 1000 10 20 50 100. f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS). Figure 7. Small Signal Current Gain Figure 8. Capacitance 5.

10 tip120 , tip121 , TIP122 (NPN); tip125 , tip126 , TIP127 (PNP). NPN PNP. tip120 , tip121 , TIP122 tip125 , tip126 , TIP127. 20,000 20,000. VCE = V VCE = V. 10,000 10,000. 7000. hFE , DC CURRENT GAIN. hFE , DC CURRENT GAIN. 5000 TJ = 150 C 5000. TJ = 150 C. 3000 3000. 2000 25 C 2000 25 C. 1000 - 55 C 1000. 700 - 55 C. 500 500. 300 300. 200 200. 10 10. IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP). Figure 9. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS). VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS). TJ = 25 C TJ = 25 C. IC = A A A IC = A A A. 10 20 30 10 20 30. IB, BASE CURRENT (mA) IB, BASE CURRENT (mA). Figure 10. Collector Saturation Region TJ = 25 C TJ = 25 C. V, VOLTAGE (VOLTS). V, VOLTAGE (VOLTS).


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