TPS23753A IEEE 802.3 PoE Interface and Converter ...

1 EthernetTransformersVDD1 VSSCLSCINVOUTRCTLCCTLFrom SparePairs orTransformersDSDENBLNKFRSDARFRSVBCVBA dapterRFBURFBLTLV431 ROBCIZAPDRAPD2 RAPD1 RBLNKVDDCIOT1BR1BR2 RVC* Adapter Interface and RBLNKare Optional**Copyright 2016, Texas Instruments IncorporatedProductFolderSample &BuyTechnicalDocumentsTools &SoftwareSupport &CommunityReferenceDesignAn IMPORTANTNOTICEat the end of this datasheetaddressesavailability,warranty, changes,use in safety-criticalapplications,intellectual propertymattersand JULY2009 REVISEDAPRIL2016 TPS23753 AIEEE PoE Interfaceand ConverterControllerWith EnhancedESDI mmunity11 Features1 EnhancedESDRide-ThroughCapability Optimizedfor IsolatedConverters CompletePoE Interface AdapterORingSupport 12-VAdapterSupport ProgrammableFrequencyWithSynchronization Robust100-V, HotswapMOSFET Small14-PinTSSOPP ackage 15-kVand 8-kVSystemLevelESDC apable 40 C to 125 C JunctionTemperatureRange DesignProcedureApplicationNote SLVA305 AdapterORingApplicationNote SLVA3062 Applications VoIPTelephones AccessPoints SecurityCameras3 DescriptionThe TPS23753 Ais a combinedPoweroverEthernet(PoE)powereddev ice(PD) PoEimplementationsupportsthe a 13-W,type1 PD.

2 The requirementsfor an a supersetof ( ).The TPS23753 Asupportsa numberof input-voltageORingoptionsincludinghighes tvoltage,externaladapterpreference,and PoE externaldetectionsignaturepin that can alsobe usedto PoEfunctionto be turnedoff. Classificationcanbeprogrammedto any of the definedtypeswith a bootstrapstart-upmechanismwith an internal, providesthe advantagesof cyclingoverloadfaultprotectionwithoutthe constantpowerloss of a programmableoscillatormaybe synchronizedtoa uninterrupteddeviceoperationthroughan (1)PARTNUMBERPACKAGEBODYSIZE(NOM)TPS2375 3 ATSSOP(14) (1) For all availablepackages,see the orderableaddendumatthe end of the JULY2009 :TPS23753 ASubmitDocumentationFeedbackCopyright 2009 2016,TexasInstrumentsIncorporatedTableof Contents1 Pin Configurationand :PoE and Applicationand Deviceand Mechanical,Packaging,and RevisionHistoryNOTE.

3 Pagenumbersfor previousrevisionsmay differfrompagenumbersin the (January2010)to RevisionCPage AddedPin Configurationand Functionssection,ESDR atingstable,FeatureDescriptionsection,De viceFunctionalModes,Applicationand Implementationsection,PowerSupplyRecomme ndationssection,Layoutsection,Deviceand DocumentationSupportsection,andMechanica l,Packaging,and (September2009)to RevisionBPage : Changedthe text in paragraphone of the Changedthe Thermalresistancenotein the DISSIPATIONRATINGS tableto Changedtext in the secondparagraphof ClassicPoE OverdriveFrom:The PD may returnthe (oftenreferredto as 13 W) current-encodedclass,or one of four : The PD may returnthe default13-Wcurrent-encodedclass,or one of four ChangedTable1 - Notesfor the Class4 (July2009)to RevisionAPage Changedthe JULY2009 REVISEDAPRIL2016 ProductFolderLinks:TPS23753 ASubmitDocumentationFeedbackCopyright 2009 2016,TexasInstrumentsIncorporated5 ProductInformationDEVICEDUTYCYCLEPOEUVLO ON / / 78%35 Pin Configurationand FunctionsPW Package14-PinTSSOPTop ViewPin controlloop inputto the PWM(pulsewidthmodulator).

4 Use VBas a pullupfor bias rail for F ceramiccapacitorto be usedto bias an externaloptocouplerfor to the high side of internalstart-upcurrentsourceand converterbias windingoutputpowerthis pin. Connecta F minimumceramiccapacitorto RTN,and a largercapacitorto the RTNis the negativerail inputto the DC-DCconverterand outputof the PoE Negativepowerrail derivedfromthe PoE Sourceof VDDfor Positiveinputpowerrail for PoE PoE resistorfromDENto VDDto providethe PoE pinto VSSduringpoweredoperationcausesthe internalhotswapMOSFETto turn resistorfromCLSto VSSto programthe V to disablethe internalPD hotswapswitch,forcingpowerto the adapterthrougha RTNto use the internallyset blankingperiodor connectthrougha resistorto RTNtoprogramthe resistorfromFRSto RTNto programthe JULY2009.

5 TPS23753 ASubmitDocumentationFeedbackCopyright 2009 2016,TexasInstrumentsIncorporated(1)Stre ssesbeyondthoselistedunderAbsoluteMaximu mRatingsmay causepermanentdamageto the stressratingsonly,whichdo not implyfunctionaloperationof the deviceat theseor any otherconditionsbeyondthoseindicatedunder RecommendedOperatingConditions. Exposureto absolute-maximum-ratedconditionsfor extendedperiodsmay affectdevicereliability.(2)IRTN= 0 for VRTN> 80 V.(3)Do not applyvoltageto with respectto VSS(unlessotherwisenoted)(1)per Figure25 per Table1 MINMAXUNITVII nputvoltageVDD, VDD1, DEN,RTN(2) RTN (3) [APD,BLNK(3), CTL,FRS(3), VB(3)] to RTN to RTN RTN (3)to RTN + sinkingcurrentGATE25mARMSTJO peratingjunctiontemperature 40 to InternallyLimited CTstgStoragetemperature 65150 C(1)JEDEC documentJEP155statesthat 500-VHBM allowssafe manufacturingwith a standardESDcontrolprocess.

6 (2)JEDEC documentJEP157statesthat 250-VCDM allowssafe manufacturingwith a standardESDcontrolprocess.(3)Surgesper EN61000-4-2,1999appliedbetweenRJ-45and outputgroundand betweenadapterinputand outputgroundof theTPS23753 AEVM-001(HPA304-001)evaluationmodule(doc umentationavailableon the web).Thesewerethe test levels,not the (ESD)ElectrostaticdischargeHuman-bodymod el(HBM),per ANSI/ESDA/JEDECJS-001(1) 2000 VCharged-devicemodel(CDM),per JEDEC specificationJESD22-C101(2) 500 IEC 61000-4-2contactdischarge(3) 8000 IEC 61000-4-2air-gapdischarge(3) respectto VSS(unlessotherwisenoted)MINNOMMAXUNITVI I nputvoltage,VDD, VDD1, RTN057 VInputvoltage,VCto RTN018 Inputvoltage,APD,CTL to RTN0 VBInputvoltage,CS to RTN02 RTNcurrent(TJ 125 C) FRBLNK0350k Synchronizationpulsewidthinput(whenused) 25nsTJOperatingjunctiontemperature 40125 JULY2009 REVISEDAPRIL2016 ProductFolderLinks.

7 TPS23753 ASubmitDocumentationFeedbackCopyright 2009 2016,TexasInstrumentsIncorporated(1)For moreinformationabouttraditionaland new thermalmetrics,see theSemiconductorand IC PackageThermalMetricsapplicationreport, (1)TPS23753 AUNITPW (TSSOP)14 PINSR C/WR JC(top)Junction-to-case(top) C/WR C/W C/W C/W(1)The hysteresistolerancetracksthe risingthresholdfor a :ControllerSectionOnlyUnlessotherwisenot ed:CS = APD= CTL = RTN,GATE open,RFRS= , RBLNK= 249 k , CVB= CVC= F, RDEN= , RCLS open,VVDD-VSS= 48 V, VVDD1-RTN= 48 V, V VVC-RTN 18 V, 40 C TJ 125 C [VSS= RTNand VDD=VDD1] or [VSS= RTN= VDD], all voltagesreferredto at 25 (1) 12 V, CTL = ,CVC= 22 FVDD1= , VVC(0) = 0 V5085175 VVDD1= 35 V, VVC(0) = 0 V304885 Start-upcurrentsource- IVCVDD1= , VVC= 48 V, VVC= 0 V VC 18 V, 0 IVB 5 , MeasureGATE223248273kHzRFRS= DMAXD utycycleCTL=VB, MeasureGATE76% duty cyclethresholdVCTL until sInputresistance70100145k BLNKB lankingdelayIn additionto t1355275nsBLNK= RTNRBLNK= 415263 CSVCSMAXM aximumthresholdvoltageVCTL= VB, VCS until maximumdutycycle,referredto CS90118142mVISL_EXPeakslopecompensationc urrentVCTL= VB, ICSat maximumdutycycle(ac component)304254 ABiascurrent(sourcing)

8 Gatehigh,DC componentof A6 TPS23753 ASLVS933C JULY2009 :TPS23753 ASubmitDocumentationFeedbackCopyright 2009 2016,TexasInstrumentsIncorporatedElectri calCharacteristics:ControllerSectionOnly (continued)Unlessotherwisenoted:CS = APD= CTL = RTN,GATE open,RFRS= , RBLNK= 249 k , CVB= CVC= F, RDEN= , RCLS open,VVDD-VSS= 48 V, VVDD1-RTN= 48 V, V VVC-RTN 18 V, 40 C TJ 125 C [VSS= RTNand VDD=VDD1] or [VSS= RTN= VDD], all voltagesreferredto at 25 (2)Theseparametersare providedfor referenceonly,and do not constitutepart of TI's publisheddevicespecificationsfor purposesof TI' VB, VC= 12 V, GATE high, VB, VC= 12 V, GATElow, (1) CHysteresis(2)20 C(1)The hysteresistolerancetracksthe risingthresholdfor a :PoEand ControlUnlessotherwisenoted:CS = APD= CTL = RTN,GATE open,RFRS= , RBLNK= 249 k , CVB= CVC= F, RDEN= , RCLS open,VVDD-VSS= 48 V, VVDD1-RTN= 48 V, V VVC-RTN 18 V, 40 C TJ 125 C [VSS= RTNand VDD=VDD1] or [VSS= RTN= VDD], all voltagesreferredto RTN.

9 [VDD= VDD1] or [VDD1= RTN],VVC-RTN= 0 V, all voltagesreferredtoVSS. Typicalspecificationsare at 25 (DETECTION)(VDD= VDD1= RTN= VSUPPLYPOSITIVE) AVDD= VVDD= 10 V399406413 Detectionbias currentVDD= 10 V, DENopen, AVPD_DISH otswapdisablethreshold345 VIlkgDENleakagecurrentVDEN= VDD= 57 V, FloatVDD1and RTN, ACLS(CLASSIFICATION)(VDD= VDD1= RTN= VSUPPLYPOSITIVE)ICLSC lassificationcurrent13 V VDD 21 V, 1270 243 137 , (1) , VDDrising212223 VVCU_HYSH ysteresis(1) 57 V, VCLS= 0 V, DEN= VSS, MeasureICLS1 ARTN(PASSDEVICE)(VDD1= RTN) CurrentlimitVRTN= V, VDD= 48 V, PulsedMeasurement405450505mAInrushlimitV RTN= 2 V, VDD: 0 V 48 V, VRTN= 100 V, DEN= VSS40 JULY2009 REVISEDAPRIL2016 ProductFolderLinks:TPS23753 ASubmitDocumentationFeedbackCopyright 2009 2016,TexasInstrumentsIncorporatedElectri calCharacteristics.

10 PoEand Control(continued)Unlessotherwisenoted:C S = APD= CTL = RTN,GATE open,RFRS= , RBLNK= 249 k , CVB= CVC= F, RDEN= , RCLS open,VVDD-VSS= 48 V, VVDD1-RTN= 48 V, V VVC-RTN 18 V, 40 C TJ 125 C [VSS= RTNand VDD=VDD1] or [VSS= RTN= VDD], all voltagesreferredto RTN.[VDD= VDD1] or [VDD1= RTN],VVC-RTN= 0 V, all voltagesreferredtoVSS. Typicalspecificationsare at 25 (2)Theseparametersare providedfor (1) CHysteresis(2)20 C0200400600800100012007911131517V - Controller Bias Voltage - VCV - Controller Bias Current - ACmGate OpenT = 25 CJ500 kHz250 kHz100 kHz50 kHzV= 0 VCTL01002003004005006007008009001000-40- 20020406080100120T - Junction Temperature - CJI- Sinking - AVCmGate OpenV= 12 VVC500 kHz250 kHz100 kHz50 kHzV= 0 VCTL012345651015202530354045505560V= VVCI- Source Current - mAVCV- VVDD1-RTNT = -40 CJT = 25 CJT = 125 CJ20406080100120140160-40-20020406080100 120 Converter Start Time - msT - Junction Temperature - CJC= 22 FVCmV= VVDD1V= VVDD1V= 35 VVDD1446448450452454456458-40-2002040608 0100120 PoE - Current Limit - mAT - Junction Temperature - CJ0123456780246810I- Bias Current - AVDDmV- PoE Voltage - VVDD-VSST = 125 CJT = 25 CJT = -40 CJ8 TPS23753 ASLVS933C JULY2009.