1 , , SNVS750D JUNE 1999 REVISED MARCH 2013. , , Reference Diode Check for Samples: , , 1 FEATURES DESCRIPTION.. 2 Adjustable 4V to 6V The integrated circuits are precision shunt regulator diodes. Low Temperature Coefficient These monolithic IC voltage references operate as a Wide Operating Current of 600 A to 10 mA low temperature coefficient zener with . Dynamic Impedance dynamic impedance. A third terminal on the lm136 - allows the reference voltage and temperature 1% Initial Tolerance Available coefficient to be trimmed easily. Specified Temperature Stability The series is useful as a precision Easily Trimmed for Minimum Temperature Drift low voltage reference for digital voltmeters, power Fast Turn-on supplies or op amp circuitry.
2 The makes it Three Lead Transistor Package convenient to obtain a stable reference from low voltage supplies. Further, since the operates as a shunt regulator, it can be used as either a positive or negative voltage reference. The is rated for operation over 55 C to +125 C while the is rated over a 25 C to +85 C temperature range. The is rated for operation over a 0 C to +70 C temperature range. See the Connection Diagrams for available packages. For applications requiring see Connection Diagrams Figure 1. TO-92 Plastic Package Figure 2. TO Metal Can Package (Bottom View) (Bottom View). Figure 3. SOIC Package 1. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
3 2 All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Copyright 1999 2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. , , SNVS750D JUNE 1999 REVISED MARCH 2013 Typical Applications Figure 4. Reference Adjust to * Any silicon signal diode Figure 5. Reference with Minimum Temperature Coefficient * Does not affect temperature coefficient Figure 6. Trimmed 4V to 6V Reference with Temperature Coefficient Independent of Breakdown Voltage 2 Submit Documentation Feedback Copyright 1999 2013, Texas Instruments Incorporated Product Folder Links: , , SNVS750D JUNE 1999 REVISED MARCH 2013.
4 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. (1). ABSOLUTE MAXIMUM RATINGS. Reverse Current 15 mA. Forward Current 10 mA. Storage Temperature 60 to +150 C. (2). Operating Temperature Range 55 to +150 C. 25 to +85 C. 0 to +70 C. Soldering Information TO-92 Package (10 sec.) 260 C. TO Package (10 sec.) 300 C. SOIC Package Vapor Phase (60 sec.) 215 C. Infrared (15 sec.) 220 C. (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when operating the device beyond its specified operating conditions.
5 (2) For elevated temperature operation, Tj max see THERMAL CHARACTERISTICS. THERMAL CHARACTERISTICS. over operating free-air temperature range (unless otherwise noted). lm136 150 C. lm236 125 C. lm336 100 C. Thermal Resistance TO-92 TO SOIC-8. ja (Junction to Ambient) 180 C/W ( Leads) 440 C/W 165 C/W. 170 C/W ( Leads). ja (Junction to Case) N/A 80 C/W N/A. ELECTRICAL CHARACTERISTICS. Parameter Conditions Units Min Typ Max Min Typ Max Reverse Breakdown TA=25 C, IR=1 mA. Voltage V. , V. Reverse Breakdown TA=25 C, 6 12 6 20 mV. Change With Current 600 A IR 10 mA. Reverse Dynamic TA=25 C, IR=1 mA, f = 100 Hz 2 . Impedance Temperature Stability VR Adjusted (2). IR=1 mA, (Figure 15).
6 0 C TA 70 C ( ) 4 12 mV. (1) Unless otherwise specified, the is specified from 55 C TA +125 C, the from 25 C TA +85 C and the lm336 - from 0 C TA +70 C. (2) Temperature stability for the lm336 and lm236 family is specified by design. Design limits are specified (but not 100% percent production tested) over the indicated temperature and supply voltage ranges. These limits are not used to calculate outgoing quality levels. Stability is defined as the maximum charge in VREF from 25 C to TA(min) or TA(max). Copyright 1999 2013, Texas Instruments Incorporated Submit Documentation Feedback 3. Product Folder Links: , , SNVS750D JUNE 1999 REVISED MARCH 2013 ELECTRICAL CHARACTERISTICS (continued).
7 (1). Parameter Conditions Units Min Typ Max Min Typ Max 25 C TA +85 C ( ) 7 18 mV. 55 C TA +125 C ( ) 20 36 mV. Reverse Breakdown 600 A IR 10 mA 6 17 6 24 mV. Change With Current Adjustment Range Circuit of Figure 14 1 1 V. Reverse Dynamic IR = 1 mA . Impedance Long Term Stability TA=25 C C, IR=1 mA, t = 1000 hrs 20 20 ppm 4 Submit Documentation Feedback Copyright 1999 2013, Texas Instruments Incorporated Product Folder Links: , , SNVS750D JUNE 1999 REVISED MARCH 2013. TYPICAL PERFORMANCE CHARACTERISTICS. Reverse Voltage Change Zener Noise Voltage Figure 7. Figure 8. Dynamic Impedance Response Time Figure 9. Figure 10. Reverse Characteristics Temperature Drift Figure 11. Figure 12.
8 Copyright 1999 2013, Texas Instruments Incorporated Submit Documentation Feedback 5. Product Folder Links: , , SNVS750D JUNE 1999 REVISED MARCH 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued). Forward Characteristics Figure 13. 6 Submit Documentation Feedback Copyright 1999 2013, Texas Instruments Incorporated Product Folder Links: , , SNVS750D JUNE 1999 REVISED MARCH 2013. APPLICATION HINTS. The series voltage references are much easier to use than ordinary zener diodes. Their low impedance and wide operating current range simplify biasing in almost any circuit. Further, either the breakdown voltage or the temperature coefficient can be adjusted to optimize circuit performance.
9 Figure 14 shows an with a 10k potentiometer for adjusting the reverse breakdown voltage. With the addition of R1 the breakdown voltage can be adjusted without affecting the temperature coefficient of the device. The adjustment range is usually sufficient to adjust for both the initial device tolerance and inaccuracies in buffer circuitry. If minimum temperature coefficient is desired, four diodes can be added in series with the adjustment potentiometer as shown in Figure 15. When the device is adjusted to the temperature coefficient is minimized. Almost any silicon signal diode can be used for this purpose such as a 1N914, 1N4148 or a 1N457. For proper temperature compensation the diodes should be in the same thermal environment as the It is usually sufficient to mount the diodes near the on the printed circuit board.
10 The absolute resistance of the network is not critical and any value from 2k to 20k will work. Because of the wide adjustment range, fixed resistors should be connected in series with the pot to make pot setting less critical. Figure 14. with Pot for Adjustment of Figure 15. Temperature Coefficient Adjustment Breakdown Voltage (Trim Range = Typical) (Trim Range = Typical). Typical Applications * Adjust for across R1. Figure 16. Precision Power Regulator with Low Temperature Coefficient Copyright 1999 2013, Texas Instruments Incorporated Submit Documentation Feedback 7. Product Folder Links: , , SNVS750D JUNE 1999 REVISED MARCH 2013 Figure 17. 5V Crowbar Figure 18. Adjustable Shunt Regulator Figure 19.