ZXMS6004FF 60V N-CHANNEL SELF PROTECTED …

1 ZXMS6004FF Document number: DS33609 Rev. 7 - 2 1 of 9 January 2016 Diodes Incorporated ZXMS6004FF DMN2027 USS 60V N-CHANNEL self PROTECTED ENHANCEMENT MODE IntelliFET MOSFET Product Summary Continuous Drain Source Voltage: 60V On-State Resistance: 500m Nominal Load Current (VIN = 5V): Clamping Energy: 90mJ Description The ZXMS6004FF is a self - PROTECTED low side IntelliFET MOSFET with logic level input. It integrates overtemperature, overcurrent, overvoltage (active clamp) and ESD PROTECTED logic level functionality. The ZXMS6004FF is ideal as a general purpose switch driven from or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. Applications Especially Suited for Loads with a High In-Rush Current such as Lamps and Motors All Types of Resistive, Inductive and Capacitive Loads in Switching Applications C Compatible Power Switch for 12V and 24V DC Applications Replaces Electromechanical Relays and Discrete Circuits Linear Mode Capability the current-limiting protection circuitry is designed to de-activate at low VDS to minimize on state power dissipation.

2 The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product s ability to self -protect at low VDS. Features and Benefits Compact High Power Dissipation Package Low Input Current Logic Level Input ( and 5V) Short Circuit Protection with Auto-Restart Overvoltage Protection (Active Clamp) Thermal Shutdown with Auto-Restart Overcurrent Protection Input Protection (ESD) High Continuous Current Rating Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (ZXMS6004 FFQ) Mechanical Data Case: SOT23F Case Material: Molded Plastic, Green Molding Compound.

3 UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: grams (Approximate) Ordering Information (Note 4) Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXMS6004 FFTA 1K6 7 12 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at Top View SOT23F Top view Pin Out SINDI ntelliFET is a trademark of Diodes Incorporated.

4 ZXMS6004FF Document number: DS33609 Rev. 7 - 2 2 of 9 January 2016 Diodes Incorporated ZXMS6004FF DMN2027 USS Marking Information Functional Block Diagram Y: Year: 0~9 W: Week: A-Z : 1~26 a~z: 27~52 z: Represents 52 & 53 Week 1K6 = Product Type Marking Code 1K6 ZXMS6004FF Document number: DS33609 Rev. 7 - 2 3 of 9 January 2016 Diodes Incorporated ZXMS6004FF DMN2027 USS Maximum Ratings (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Value Units Continuous Drain-Source Voltage VDS 60 V Drain-Source Voltage for Short Circuit Protection VDS(SC) 36 V Continuous Input Voltage VIN .. +6 V Continuous Input Current VIN 6V Continuous Input Current @VIN < or VIN > 6V IIN No limit IIN 2 mA Pulsed Drain Current @VIN = IDM 2 A Pulsed Drain Current @VIN = 5V IDM A Continuous Source Current (Body Diode) IS 1 A Pulsed Source Current (Body Diode) ISM 5 A Unclamped Single Pulse Inductive Energy, TJ = +25 C, ID = , VDD = 24V EAS 90 mJ Electrostatic Discharge (Human Body Model) VESD 4,000 V Charged Device Model VCDM 1,000 V Thermal Characteristics (@TA = +25 C, unless otherwise specified.)

5 Characteristic Symbol Value Units Power Dissipation @TA = +25 C (Note 5) Linear Derating Factor PD W mW/ C Power Dissipation @TA = +25 C (Note 6) Linear Derating Factor PD W mW/ C Thermal Resistance, Junction to Ambient (Note 5) R JA 150 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA 83 C/W Thermal Resistance, Junction to Case (Note 7) R JC 44 C/W Operating Temperature Range TJ -40 to +150 C Storage Temperature Range TSTG -55 to +150 C Notes: 5. For a device surface mounted on 15mm x 15mm single sided, 1oz weight copper on FR4 board, in still air conditions. 6. For a device surface mounted on 50mm x 50mm single sided, 2oz weight copper on FR4 board, in still air conditions. 7. Thermal resistance from junction and the mounting surfaces of the drain pins. Recommended Operating Conditions The ZXMS6004FF is optimized for use with C operating from and 5V supplies.

6 Characteristic Symbol Min Max Unit Input Voltage Range VIN 0 V Ambient Temperature Range TA -40 +125 C High Level Input Voltage for MOSFET to be On VIH 3 V Low Level Input Voltage for MOSFET to be Off VIL 0 V Peripheral Supply Voltage (Voltage to which Load is Referred) VP 0 36 V ZXMS6004FF Document number: DS33609 Rev. 7 - 2 4 of 9 January 2016 Diodes Incorporated ZXMS6004FF DMN2027 USS Typical Thermal Characteristics 11010m100m1 Limited by Over-Current ProtectionSingle PulseTamb=25 C15X15mm FR4 1oz CuLimitedby RDS(on)1ms10ms100ms1sDCSafe Operating AreaID Drain Current (A)VDS Drain-Source Voltage (V)Limit of s/c FR4 1oz CuDerating Curve Temperature ( C) Max Power Dissipation (W)50X50mm FR4 2oz Cu100 1m10m100m1101001k020406080100120140160 Tamb=25 C15X15mm FR4 1oz CuTransient Thermal ImpedanceD= PulseD= Resistance ( C/W)Pulse Width (s)100 1m10m100m1101001k110100 Single PulseTamb=25 C15X15mm FR4 1oz CuPulse Power DissipationPulse Width (s) Maximum Power (W) ZXMS6004FF Document number: DS33609 Rev.

7 7 - 2 5 of 9 January 2016 Diodes Incorporated ZXMS6004FF DMN2027 USS Electrical Characteristics (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Static Characteristics Drain-Source Clamp Voltage VDS(AZ) 60 65 70 V ID = 10mA Off-State Drain Current IDSS 500 nA VDS = 12V, VIN = 0V 1 A VDS = 36V, VIN = 0V Input Threshold Voltage VIN(TH) 1 V VDS = VGS, ID = 1mA Input Current IIN 60 100 A VIN = +3V 120 200 VIN = +5V Input Current while Overtemperature Active 220 A VIN = +5V Static Drain-Source On-State Resistance RDS(ON) 400 600 m VIN = +3V, ID = 350 500 VIN = +5V, ID = Continuous Drain Current (Note 5) ID A VIN = 3V; TA = +25 C VIN = 5V; TA = +25 C Continuous Drain Current (Note 6) VIN = 3V; TA = +25 C VIN = 5V.

8 TA = +25 C Current Limit (Note 8) ID(LIM) A VIN = +3V 1 VIN = +5V Dynamic Characteristics Turn-On Delay Time tD(ON) 5 s VDD = 12V, ID = , VGS = 5V Rise Time tR 10 Turn-Off Delay Time tD(OFF) 45 Fall Time fF 15 Overtemperature Protection Thermal Overload Trip Temperature (Note 9) TJT +150 +175 C Thermal Hysteresis (Note 9) fF +10 C Notes: 8. The drain current is restricted only when the device is in saturation (see graph Typical Output Characteristic ). This allows the device to be used in the fully on-state without interference from the current limit. The device is fully PROTECTED at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 9. Overtemperature protection is designed to prevent device destruction under fault conditions.

9 Fault conditions are considered as outside normal operating range, so this part is not designed to withstand overtemperature for extended periods. ZXMS6004FF Document number: DS33609 Rev. 7 - 2 6 of 9 January 2016 Diodes Incorporated ZXMS6004FF DMN2027 USS Typical Performance Characteristics Output CharacteristicTA = 25 Drain Current (A)VDS Drain-Source Voltage (V)Threshold Voltage vs TemperatureVIN = VDSID = 1mAVTH Threshold Voltage (V)TJ Junction Temperature ( C)TJ = 150 COn-Resistance vs Input VoltageTJ = 25 CRDS(on) On-Resistance ( )VIN Input Voltage (V)ID = Diode CharacteristicVIN = 3 VVIN = 5 VOn-Resistance vs TemperatureTJ Junction Temperature ( C)RDS(on) On-Resistance ( )Input Current vs Input VoltageIIN Input Current ( A)VIN Input Voltage (V) VSD Source-Drain Voltage (V) IS Source Curent (A)TJ=25 CTJ=150 C ZXMS6004FF Document number: DS33609 Rev.

10 7 - 2 7 of 9 January 2016 Diodes Incorporated ZXMS6004FF DMN2027 USS Typical Performance Characteristics (Continued) SpeedVIND rain-Source Voltage (V)Time ( s)VDSID=500mAVDSVINS witching SpeedDrain-Source Voltage (V)Time ( s)ID=500mATypical Short Circuit ProtectionVIN = 5 VVDS = 15 VRD = 0 ID Drain Current (A)Time (ms) ZXMS6004FF Document number: DS33609 Rev. 7 - 2 8 of 9 January 2016 Diodes Incorporated ZXMS6004FF DMN2027 USS Package Outline Dimensions Please see AP02001 at for the latest version. SOT23F SOT23F Dim Min Max Typ A b c D e REF e1 REF E E1 k - - L L1 R - All Dimensions in mm Suggested Pad Layout Please see AP02001 at for the latest version. SOT23F Dimensions Value (in mm) C X Y Y1 E1 DbEL1 ARbe1eckLXYY1C ZXMS6004FF Document number: DS33609 Rev.