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2N3906 General Purpose Transistors

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Semiconductor Components Industries, LLC, 2010February, 2010 Rev. 41Publication Order Number: 2N3906 /D2N3906General PurposeTransistorsPNP SiliconFeatures Pb Free Packages are Available*MAXIMUM RATINGSRatingSymbolValueUnitCollector Emitter VoltageVCEO40VdcCollector Base VoltageVCBO40VdcEmitter Base Current ContinuousIC200mAdcTotal Device Dissipation @ TA = 25 CDerate above 25 CTotal Power Dissipation @ TA = 60 CPD250mWTotal Device Dissipation @ TC = 25 CDerate above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to +150 CTHERMAL CHARACTERISTICS (Note 1)CharacteristicSymbolMaxUnitThermal Resistance, Junction to AmbientRqJA200 C/WThermal Resistance, Junction to C/WStresses exceeding Maximum Ratings may damage the device.

3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section …

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