2N4401 General Purpose Transistors

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Semiconductor Components Industries, LLC, 2010February, 2010 Rev. 41Publication Order Number: 2N4401 /D2N4401General PurposeTransistorsNPN SiliconFeatures Pb Free Packages are Available*MAXIMUM RATINGSRatingSymbolValueUnitCollector Emitter VoltageVCEO40VdcCollector Base VoltageVCBO60VdcEmitter Base Current ContinuousIC600mAdcTotal Device Dissipation@ TA = 25 CDerate above 25 CTotal Device Dissipation@ TC = 25 CDerate above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to+150 CTHERMAL CHARACTERISTICSCharacteristicSymbolMaxUn itThermal Resistance, Junction to AmbientRqJA200 C/WThermal Resistance, Junction to C/WStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only.

Figure 4. Charge Data IC, COLLECTOR CURRENT (mA) 0.1 2.0 5.0 10 20 2.0 30 50 CAPACITANCE (pF) Q, CHARGE (nC) 3.0 2.0 3.0 5.0 7.0 10 1.0 10 20 50 70 100 200 0.1 300 500 0.7 0.5 VCC = 30 V IC/IB = 10 Cobo QT QA 25°C 100°C TRANSIENT CHARACTERISTICS 0.2 0.3 0.5 1.0 3.0 0.3 0.2 30 Ccb Figure 5. Turn−On Time IC, COLLECTOR CURRENT (mA) 20 …

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