Transcription of 2N4401 General Purpose Transistors
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2N4401 General Purpose Transistors
Semiconductor Components Industries, LLC, 2010 February, 2010 Rev. 41 Publication Order Number: 2N4401 /D2N4401 General PurposeTransistorsNPN SiliconFeatures Pb Free Packages are Available*MAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageVCEO40 VdcCollector Base VoltageVCBO60 VdcEmitter Base Current ContinuousIC600mAdcTotal Device Dissipation@ TA = 25 CDerate above 25 CTotal Device Dissipation@ TC = 25 CDerate above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to+150 CTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to AmbientRqJA200 C/WThermal Resistance, Junction to C/WStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only.
Figure 4. Charge Data IC, COLLECTOR CURRENT (mA) 0.1 2.0 5.0 10 20 2.0 30 50 CAPACITANCE (pF) Q, CHARGE (nC) 3.0 2.0 3.0 5.0 7.0 10 1.0 10 20 50 70 100 200 0.1 300 500 0.7 0.5 VCC = 30 V IC/IB = 10 Cobo QT QA 25°C 100°C TRANSIENT CHARACTERISTICS 0.2 0.3 0.5 1.0 3.0 0.3 0.2 30 Ccb Figure 5. Turn−On Time IC, COLLECTOR CURRENT (mA) 20 …
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