Advanced FinFET Process Technology

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National Institute of Advanced Industrial Science and TechnologyAdvanced FinFET Process Technology M. MasaharaNational Institute of AIST1National Institute of Advanced Industrial Science and Technology1. Introduction2. Advanced FinFET Process Technology3. Summary Merits and Issues of FinFET Vth Tuning Vth VariationContents1. Introduction2. Advanced FinFET Process Technology3. Summary Merits and Issues of FinFET Vth Tuning Vth Variation2National Institute of Advanced Industrial Science and TechnologyMulti-Gate FinFETsSGDSGD1stFinFET Patent in 1980 from AISTFinFET Proposed by AIST in 1980(named FinFET by UCB in 1999) Ultrathin and undoped channel and self-aligned double gate Extremely high short channel effect (SCE) immunity3National Ins

AIST, IEEE EDL 2010 Main Cause Dimension variation sources are negligible Main cause of the V ... SOI Conf, 2011, 7.1. 23 LSTP15nm LSTP22nm Obtained Avt meets 22-nm-node SRAM requirement For 15nm and beyond, Avt should be further reduced . National Institute of Advanced Industrial Science and Technology 1. Introduction

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