GaN Power HEMT Tutorial: GaN Basics
GANPOWERINTERNATIONAL INC Fred Yue Fu ( ),GaNPower International Yue Fu Co-founderand COOGaNPower International Power HEMT Tutorial: GaN Basics12 Fred Yue Fu ( ), GaNPower International Session 1: GaN devices Basics GaN, An Introduction GaN Design, Fabrication and Testing GaN Compact Modeling and Reliability Session 2: Gate Driving Session 3: GaN Applications3 Fred Yue Fu ( ), GaNPower International 1960s1970s1980s20002010Power Diode GermaniumThyristorSiliconPower BipolarSiliconPower MOSFET SiliconIGBTSiliconSchottky diodeSilicon CarbidePower HEMTGaNPower Devices: History of Evolvements4 Fred Yue Fu ( ), GaNPower International s time to move +substraten-drift regionp+ body contactpolysilicon gatesource contactn+ sourcep-well5 Fred Yue Fu ( ), GaNPower International Properties ComparisonMaterialPropertySiliconSiC-4HG aNBand-gap(eV) (1E+6V/cm) (cm2/V-Sec.)
1，Kevin J. Chen, Understanding the Dynamic Behavior in GaN-on-Si Power Devices and IC’s, Integrated Power Conversion and Power Management, 2018 2，Greco, G., Iucolano, F., & Roccaforte, F. Review of technology for normally-off HEMTs with p-GaN gate. Materials Science in Semiconductor Processing GIT p-GaN p-GaN
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