Search results with tag "Gallium nitride"
Fundamentals of Gallium Nitride Power Transistors
epc-co.comEPC’s enhancement mode gallium nitride (eGaN®) transistors behave very similarly to silicon power MOSFETs. A positive bias on the gate relative to the source causes a field effect which attracts electrons that complete a bidirectional channel between the drain and the source. A key difference between gallium nitride (GaN) and silicon is that
A Technical Note on Gallium Nitride Technology …
lajpe.orgLat. Am. J. Phys. Educ. Vol. 8 No. 3, Sept. 2014 541 http://www.lajpe.org A Technical Note on Gallium Nitride Technology and short Qualitative Review of its Novel
GaN HEMTを用いた携帯電話基地局向け 広帯域・高出力・高 …
sei.co.jp(GaN HEMT※1: Gallium Nitride High Electron Mobility Transistor)の研究および開発を2000年から進め、2006 ... power wideband asymmetric Doherty amplifier using the devices are also described. The transistor has a pair of 180 W GaN dies. The internal matching circuit is designed with a high-dielectric substrate so that it can ...
Investor Presentation Electrify Our World
www.navitassemi.comNavitas Semiconductor (“Navitas”), the world’s first Gallium Nitride (“GaN”) power IC platform $145M PIPE in connection with the merger
Vol.84 No.5 2011 SiCパワーモジュールのパッケージ技術
www.fujielectric.co.jpWide bandgap materials such as silicon carbide (SiC) and gallium nitride (GaN) are attracting attention as materials for next-generation power semiconductor devices. Fuji Electric is currently developing new packaging technologies to take full advantage of SiC devices.
Company Presentation - STMicroelectronics
www.st.com• Gallium Nitride (GaN) on silicon power and RF transistors • LDMOS & DMOS RF power transistors • Silicon-Carbide MOSFETs • High- and low-voltage silicon power MOSFETs (STripFET, Planar & MDmesh*) • IGBTs. Power bipolar transistors • ACEPACK* power modules. SLLIMM* intelligent power modules Key power technologies & packages for:
Motor control Reference Guide - STMicroelectronics
www.st.com39 Power Modules 44 Power MOSFETs 48 IGBT 49 600-650 V IGBT series 50 1200 V IGBT series 51 Diode & Rectifier 52 Thyristors, Triacs and AC Switches 54 Protection & Filters devices 56 MOSFET and IGBT Gate Drivers 60 Silicon Carbide and Gallium Nitride Gate Drivers 62 Current, Speed & Positioning Sensing
An X-Band 300-Watt Class High Power GaN HEMT …
global-sei.com40 · An X-band 300-W Class High Power GaN HEMT Amplifier for Radar Applications INFOCOMMUNICATIONS 1. Introduction Recently, a gallium nitride …
CGHV27030, 30W, 20-6000MHz, GaN HEMT by Cree …
www.wolfspeed.com1 Subect to change without notice. www.cree.com/RF CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT)
Gallium Nitride (GaN) versus Silicon Carbide (SiC)
www.richardsonrfpd.comGallium Nitride (GaN). These material properties have a major influence on the fundamental performance characteristics of the devices. Both SiC and GaN have material properties superior to Si for RF and Switching Power devices. The high critical field of both GaN and SiC compared to Si is a property which allows these
Gallium Nitride (GaN) versus Silicon Carbide (SiC)
www.richardsonrfpd.comMicrosemi PPG Page 3 GaN substrates are available today and primarily used to manufacture blue laser diodes on 2” wafers which is the current state of the art for …