PDF4PRO ⚡AMP

Modern search engine that looking for books and documents around the web

Example: bankruptcy

Search results with tag "Gallium nitride"

Fundamentals of Gallium Nitride Power Transistors

epc-co.com

EPC’s enhancement mode gallium nitride (eGaN®) transistors behave very similarly to silicon power MOSFETs. A positive bias on the gate relative to the source causes a field effect which attracts electrons that complete a bidirectional channel between the drain and the source. A key difference between gallium nitride (GaN) and silicon is that

  Power, Nitride, Gallium nitride, Gallium, Gallium nitride power

A Technical Note on Gallium Nitride Technology …

lajpe.org

Lat. Am. J. Phys. Educ. Vol. 8 No. 3, Sept. 2014 541 http://www.lajpe.org A Technical Note on Gallium Nitride Technology and short Qualitative Review of its Novel

  Technology, Review, Short, Qualitative, Nitride, Gallium nitride, Gallium, Gallium nitride technology and short qualitative review

GaN HEMTを用いた携帯電話基地局向け 広帯域・高出力・高 …

sei.co.jp

GaN HEMT※1: Gallium Nitride High Electron Mobility Transistor)の研究および開発を2000年から進め、2006 ... power wideband asymmetric Doherty amplifier using the devices are also described. The transistor has a pair of 180 W GaN dies. The internal matching circuit is designed with a high-dielectric substrate so that it can ...

  Devices, Them, Nitride, Gallium nitride, Gallium, Gan hemt

Investor Presentation Electrify Our World

www.navitassemi.com

Navitas Semiconductor (“Navitas”), the world’s first Gallium Nitride (“GaN”) power IC platform $145M PIPE in connection with the merger

  Power, Presentation, Investor, Investor presentation, Nitride, Gallium nitride, Gallium

Vol.84 No.5 2011 SiCパワーモジュールのパッケージ技術

www.fujielectric.co.jp

Wide bandgap materials such as silicon carbide (SiC) and gallium nitride (GaN) are attracting attention as materials for next-generation power semiconductor devices. Fuji Electric is currently developing new packaging technologies to take full advantage of SiC devices.

  Power, Nitride, Gallium nitride, Gallium

Company Presentation - STMicroelectronics

www.st.com

Gallium Nitride (GaN) on silicon power and RF transistors • LDMOS & DMOS RF power transistors • Silicon-Carbide MOSFETs • High- and low-voltage silicon power MOSFETs (STripFET, Planar & MDmesh*) • IGBTs. Power bipolar transistors • ACEPACK* power modules. SLLIMM* intelligent power modules Key power technologies & packages for:

  Stmicroelectronics, Nitride, Gallium nitride, Gallium

Motor control Reference Guide - STMicroelectronics

www.st.com

39 Power Modules 44 Power MOSFETs 48 IGBT 49 600-650 V IGBT series 50 1200 V IGBT series 51 Diode & Rectifier 52 Thyristors, Triacs and AC Switches 54 Protection & Filters devices 56 MOSFET and IGBT Gate Drivers 60 Silicon Carbide and Gallium Nitride Gate Drivers 62 Current, Speed & Positioning Sensing

  Power, Nitride, Gallium nitride, Gallium

An X-Band 300-Watt Class High Power GaN HEMT …

global-sei.com

40 · An X-band 300-W Class High Power GaN HEMT Amplifier for Radar Applications INFOCOMMUNICATIONS 1. Introduction Recently, a gallium nitride

  Applications, Power, Them, Amplifier, Radar, Nitride, Gallium nitride, Gallium, Gan power, Power gan hemt amplifier for radar applications

CGHV27030, 30W, 20-6000MHz, GaN HEMT by Cree …

www.wolfspeed.com

1 Subect to change without notice. www.cree.com/RF CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT)

  Nitride, Gallium nitride, Gallium

Gallium Nitride (GaN) versus Silicon Carbide (SiC)

www.richardsonrfpd.com

Gallium Nitride (GaN). These material properties have a major influence on the fundamental performance characteristics of the devices. Both SiC and GaN have material properties superior to Si for RF and Switching Power devices. The high critical field of both GaN and SiC compared to Si is a property which allows these

  Devices, Nitride, Gallium nitride, Gallium

Gallium Nitride (GaN) versus Silicon Carbide (SiC)

www.richardsonrfpd.com

Microsemi PPG Page 3 GaN substrates are available today and primarily used to manufacture blue laser diodes on 2” wafers which is the current state of the art for …

  Versus, Silicon, Carbide, Nitride, Gallium nitride, Gallium, Versus silicon carbide

Similar queries