LPDDR3/4-ECC DRAM for High-reliability - IoT, …
LPDDR3/4-ECC DRAM for high -reliabilityIoT, automotive and control system ApplicationsWolfgang 13th, 2015Copyright Green Mountain Semiconductor Errors and Technology Scaling2Growth Markets for Memory3ECC for Safety Critical IoT, automotive and IndustrialApplications4A flexible ECC solution for LPDDR3/4 DRAM up to 2133Mbps5ConclusionCopyright Green Mountain Semiconductor FaultsFailures in a DRAM can be classified as follows[Constantinescu, 2002].Hard FaultsPermanent recurring faults. These faults cause the memorylocation to persistently return incorrect FaultsThese faults cause a memory location to occasionally returnincorrect data. This may be due to a weak cell, and or moreextreme operating conditions (temperature).Transient FaultsAlso know as soft error, these faults are unpredictable and are notrelated to device damage. The memory location can be fixed byre-writing the correct Errors and Technology ScalingCopyright Green Mountain Semiconductor RatesSome study points on DRAM in a server farm[Sridharan, 2012].
Title: LPDDR3/4-ECC DRAM for High-reliability - IoT, Automotive and Control System Applications Author: Wolfgang Hokenmaier Created Date: 10/1/2015 10:35:38 PM
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