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LPDDR3/4-ECC DRAM for High-reliability - IoT, …
LPDDR3/4-ECC DRAM for high -reliabilityIoT, automotive and control system ApplicationsWolfgang 13th, 2015 Copyright Green Mountain Semiconductor Errors and Technology Scaling2 Growth Markets for Memory3 ECC for Safety Critical IoT, automotive and IndustrialApplications4A flexible ECC solution for LPDDR3/4 DRAM up to 2133 Mbps5 ConclusionCopyright Green Mountain Semiconductor FaultsFailures in a DRAM can be classified as follows[Constantinescu, 2002].Hard FaultsPermanent recurring faults. These faults cause the memorylocation to persistently return incorrect FaultsThese faults cause a memory location to occasionally returnincorrect data. This may be due to a weak cell, and or moreextreme operating conditions (temperature).Transient FaultsAlso know as soft error, these faults are unpredictable and are notrelated to device damage. The memory location can be fixed byre-writing the correct Errors and Technology ScalingCopyright Green Mountain Semiconductor RatesSome study points on DRAM in a server farm[Sridharan, 2012].
Title: LPDDR3/4-ECC DRAM for High-reliability - IoT, Automotive and Control System Applications Author: Wolfgang Hokenmaier Created Date: 10/1/2015 10:35:38 PM
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