R33 - Image Sensor S
R33 A Temporal-Noise cmos Image Sensor with Charge-Domain CDS and Period-Controlled Variable Conversion-Gain Xiaoliang Ge1, Albert Theuwissen1,2 1Delft University of Technology, Delft, the Netherlands; 2Harvest Imaging, Bree, BelgiumEmail: Tel: (+31) (0) 152786518 Abstract This paper introduces a proof-of-concept low-noise cmos Image Sensor (CIS) intended for photon-starved imaging applications. The proposed architecture is based on a charge-sampling pixel featuring in-pixel amplification to reduce its input-referred noise. With the proposed technique, the structure realizes a period-controlled variable conversion factor at pixel-level. This enables the conversion factor and the noise-equivalent number of electrons to be tunable according to the application without any change in hardware.
R33 A 0.5e-rms Temporal-Noise CMOS Image Sensor with Charge-Domain CDS and Period-Controlled Variable Conversion-Gain Xiaoliang Ge1, Albert Theuwissen1,2 ... CMOS image sensor (CIS) intended for photon-starved imaging applications. The proposed
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