RF Power Amplifier Design

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RF Power Amplifier DesignMarkus Mayer & Holger ArthaberDepartment of Electrical Measurements and Circuit DesignVienna University of TechnologyJune 11, 20012Contents~Basic Amplifier ConceptszClass A, B, C, F,hHCAzLinearity AspectszAmplifier Example~Enhanced Amplifier ConceptszFeedback, Feedforward, ...zPredistortionzLINC, Doherty, EER, ...3Efficiency Definitions~Drain Efficiency:~ Power Added Efficiency: DCOUTDPP= = =GPPPDDCINOUTPA11 4Ideal FET Input and Output Characteristics0VGSIDSIm2VPVPVDSmaxVDDVK VDS0V=VGSPV=0GSOhmicSaturationBreakdowng mDDKDDVVV = 5Maximum Output Power Match0VGSIDSIm2VPVPVDSmaxVDDVKVDS0V=VGSP V=0GSOhmicSaturationBreakdowngmmKDSOPTIV VR =max6Class A0VGSIDSIm2VPVPVDSmaxVDDVKVDS0VGSVDS2ppQ IDSIm02ppQ7Class A Circuit VDDRLDGS48%dB) 14 ( 50%PA == = ADGG8Class B0VGSIDSIm2VPVPVDSmaxVDDVKVDS0VGSVDS2ppQ IDSIm02ppQ9Class C0VGSIDSIm2VPVPVDSmaxVDDVKVDS0VGSVDS2ppQ IDSIm02ppQ10Class B and C Circuit VDDRLDGSf0Class BClass C%65dB) (8 6dB-%78PA == = ADGG%01%100PA GD11Influence of Conduction Angle12Class F ( harmonic controlled Amplifier )0VGSIDSIm2VPVPVDSmaxVDDVKVDS0V GSVDS2ppQIDSIm02ppQ13hHCA(halfsinusoidal lydriven HCA)0VGSIDSIm2VPVPVDSmaxVDDVKVDS0VGSVDS2 ppQIDSIm02ppQ14Class F andhHCA Circuit VDDRLVDSID Ze(n)0, n=eveninf, n=even Zo(n)0, n=1inf, n=oddClass FhHCA%87dB)

~Balanced Amplifier Configuration Port 1 Z=50 Ohm Port 2 Z=50 Ohm. 21 Amplifier Design – Simulation ~Gate & Drain Waveforms 0 500 1000 1300 Time (ps) Drain waveforms-5 0 5 10 15 20 25 ... modulator RF output high efficiency power amplifier digital signal processor local oscillator supply voltage amplifier I Q I Q di gi ta l b a s e band i npu ...

  Design, Power, Balanced, Amplifier, Modulator, Rf power amplifier design