Transcription of RF Power Amplifier Design
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RF Power Amplifier DesignMarkus Mayer & Holger ArthaberDepartment of Electrical Measurements and Circuit DesignVienna University of TechnologyJune 11, 20012 Contents~Basic Amplifier ConceptszClass A, B, C, F,hHCAzLinearity AspectszAmplifier Example~Enhanced Amplifier ConceptszFeedback, Feedforward, ..zPredistortionzLINC, Doherty, EER, ..3 Efficiency Definitions~Drain Efficiency:~ Power Added Efficiency: DCOUTDPP= = =GPPPDDCINOUTPA11 4 Ideal FET Input and Output Characteristics0 VGSIDSIm2 VPVPVDSmaxVDDVKVDS0V=VGSPV=0 GSOhmicSaturationBreakdowngmDDKDDVVV = 5 Maximum Output Power Match0 VGSIDSIm2 VPVPVDSmaxVDDVKVDS0V=VGSPV=0 GSOhmicSaturationBreakdowngmmKDSOPTIVVR =max6 Class A0 VGSIDSIm2 VPVPVDSmaxVDDVKVDS0 VGSVDS2ppQIDSIm02ppQ7 Class A Circuit VDDRLDGS48%dB) 14 ( 50%PA == = ADGG8 Class B0 VGSIDSIm2 VPVPVDSmaxVDDVKVDS0 VGSVDS2ppQIDSIm02ppQ9 Class C0 VGSIDSIm2 VPVPVDSmaxVDDVKVDS0 VGSVDS2ppQIDSIm02ppQ10 Class B and C Circuit VDDRLDGSf0 Class BClass C%65dB) (8 6dB-%78PA == = ADGG%01%100PA GD11 Influence of Conduction Angle12 Class F ( harmonic controlled Amplifier )0 VGSIDSIm2 VPVPVDSmaxVDDVKVDS0 VGSVDS2ppQIDSIm02ppQ13hHCA(halfsinusoida llydriven HCA)0 VGSIDSIm2 VPVPVDSmaxVDDVKVDS0 VGSVDS2ppQIDSIm02ppQ14 Class F andhHCA Circuit VDDRLVDSID Ze(n)0, n=eveninf, n=even Zo(n)
~Balanced Amplifier Configuration Port 1 Z=50 Ohm Port 2 Z=50 Ohm. 21 Amplifier Design – Simulation ~Gate & Drain Waveforms 0 500 1000 1300 Time (ps) Drain waveforms-5 0 5 10 15 20 25 ... modulator RF output high efficiency power amplifier digital signal processor local oscillator supply voltage amplifier I Q I Q di gi ta l b a s e band i npu ...
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