FQP30N06L 60V LOGIC N-Channel MOSFET

60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy ...

  Channel, N channel

LTC4446 - High Voltage High Side / Low Side N-Channel ...

LTC4446 1 4446f TYPICAL APPLICATION FEATURES APPLICATIONS DESCRIPTION High Voltage High Side/ Low Side N-Channel MOSFET Driver The LTC ®4446 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a DC/DC converter

  Channel, N channel

PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level …

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide ran ge of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 175°C Optimised for 4.5V Gate drive utilising NextPower Superjunction technology

  Channel, N channel

N-Channel Mosfet Transistor IRF840 - njsemi.com

N-Channel Mosfet Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 IRF840 FEATURES Drain Current -ID=8.0A@ TC=25°C Drain Source Voltage-: VDSs= 500V(Min) Static Drain-Source On-Resistance) = 0.85fi(Max) DESCRITION Designed for high voltage, high speed switching power applic-ations such as switching regulators, converters ...

  Channel, N channel

BF245A; BF245B; BF245C N-channel silicon field-effect ...

N-channel silicon field-effect transistors BF245A; BF245B; BF245C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum 10 mm 10 mm. THERMAL CHARACTERISTICS STATIC CHARACTERISTICS

  Channel, N channel

BF862 N-channel junction FET

N-channel junction FET BF862 NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all

  Channel, N channel

NTB5860NL - N-Channel Power MOSFET

N-Channel Power MOSFET 60 V, 220 A, 3.0 m Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free and are RoHS Compliant • NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

  Channel, N channel

NTR4003N, NVR4003N MOSFET – Single, N-Channel, Small ...

N-Channel, Small Signal, SOT-23 30 V, 0.56 A Features • Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design • Low Gate Charge for Fast Switching • ESD Protected Gate • SOT−23 Package Provides Excellent Thermal Performance • Minimum Breakdown Voltage Rating of 30 V • NVR Prefix for Automotive and Other ...

  Channel, N channel

N-Channel 1.25-W, 2.5-V MOSFET

Si2302DS Vishay Siliconix Document Number: 70628 S-53600—Rev. D, 22-May-97 www.vishay.com FaxBack 408-970-5600 2-1 N-Channel 1.25-W, 2.5-V MOSFET

  Vishay, Channel, N channel

Features Mechanical Data - Diodes Incorporated

N-S O U R C E N-R E S I S T A N C E D S (O N) V = 1.8V GS V = 4.5V GS A V = 2.5V GS 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Fig. 5 On-Resistance Variation with Temperature-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (J,x ) R, O D R A I N-S O U R C E O N-R E S I S T A N C E (N O R M A L I Z E D) D S (O N) V = 4.5V I = 1.0A GS D V = 2.5V I = 500mA ...