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Search results with tag "Resistant semiconductor devices"
VIII.5. Noise in Transistors a) Noise in Field Effect ...
www-physics.lbl.govSince they are majority carrier devices, MOSFETs are insensitive to displacement damage, but they are affected by ionization damage, which leads to charge buildup in the oxide and the formation of interface states. See H. Spieler, Introduction to Radiation-Resistant Semiconductor Devices