Transcription of 2N3055(NPN), MJ2955(PNP) - Semiconductor and …
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2N3055(NPN), MJ2955(PNP) - Semiconductor and …
Semiconductor Components Industries, LLC, 2005 December, 2005 Rev. 61 Publication Order Number: 2n3055 /D2N3055(NPN), MJ2955(PNP) Preferred Device Complementary SiliconPower TransistorsComplementary silicon power transistors are designed forgeneral purpose switching and amplifier DC Current Gain hFE = 20 70 @ IC = 4 Adc Collector Emitter Saturation Voltage VCE(sat) = Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area Pb Free Packages are Available*MAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageVCEO60 VdcCollector Emitter VoltageVCER70 VdcCollector Base VoltageVCB100 VdcEmitter Base VoltageVEB7 VdcCollector Current ContinuousIC15 AdcBase CurrentIB7 AdcTotal Power Dissipation @ TC = 25 CDerate Above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 65 to +200 CMaximum ratings are those values beyond which device damage can ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously.
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