Transcription of 2N3906 General Purpose Transistors - ON Semiconductor
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2N3906 General Purpose Transistors - ON Semiconductor
Semiconductor Components Industries, LLC, 2010 February, 2010 Rev. 41 Publication Order Number: 2N3906 /D2N3906 General PurposeTransistorsPNP SiliconFeatures Pb Free Packages are Available*MAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageVCEO40 VdcCollector Base VoltageVCBO40 VdcEmitter Base Current ContinuousIC200mAdcTotal Device Dissipation @ TA = 25 CDerate above 25 CTotal Power Dissipation @ TA = 60 CPD250mWTotal Device Dissipation @ TC = 25 CDerate above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to +150 CTHERMAL CHARACTERISTICS (Note 1)
SOURCE RESISTANCE = 200 IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 100 A SOURCE RESISTANCE = 2.0 k IC = 50 A h PARAMETERS (VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C) Figure 9. Current Gain IC, COLLECTOR CURRENT (mA) 70 100 200 300 50 Figure 10. Output Admittance IC, COLLECTOR CURRENT (mA) h , DC CURRENT GAIN h , OUTPUT …
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