Transcription of 2N7002 - Diodes Incorporated
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2N7002 - Diodes Incorporated
2N7002 Document number: DS11303 Rev. 35 - 2 1 of 5 July 2018 Diodes Incorporated 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS RDS(ON) Max ID Max TA = +25 C 60V @ VGS = 5V 210mA Description and applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications . Motor Control Power Management Functions Features and Benefits Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
For automotive applications requiringspecific change e.: parts qualified to AEC -Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), ... Fig. 5 Typical Transfer Characteristics. D. 6 5 8 7 10 9 0 50 100 150 200 250 300 350 0 25 50 75 100125150175200 P, P OW E R D IS S IPA T IO N (mW) d.
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